高质量硼掺杂单晶金刚石同质外延及电学性质研究

人工晶体学报 ›› 2022, Vol. 51 ›› Issue (5): 893-900.

高质量硼掺杂单晶金刚石同质外延及电学性质研究

王若铮^1,2, 闫秀良^1,2, 彭博^1,2, 林芳^1,2, 魏强^1,2, 王宏兴^1,2

1.西安交通大学,电子物理与器件教育部重点实验室,西安 710049;
2.西安交通大学电子与信息学部,宽禁带半导体与量子器件研究所,西安 710049

收稿日期:2022-02-04 出版日期:2022-05-15 发布日期:2022-06-17
通讯作者: 王宏兴,博士,教授。E-mail:hxwangcn@xjtu.edu.cn
作者简介:王若铮(1989—),男,陕西省人,博士,副教授。E-mail:wangrz@xjtu.edu.cn; 王宏兴,西安交通大学教授,博士生导师,国家级特聘专家。2001年在日本德岛大学获得博士学位,其后作为高级研究员加入日本Nitride Semiconductor公司,2004—2008年作为执行董事加入了日本Dialight Japan公司,2008—2013年作为研发经理加入Seki technotron公司,2013年全职回国加入西安交通大学。主要研究领域为:半导体生长用MOCVD、MPCVD;Ⅲ-V氮化物材料及发光器件;大尺寸单晶金刚石及电子器件;金刚石基GaN复合器件;量子光源及传感器。多项成果被用于规模化生产,拥有100余项专利,发表文章120余篇。
基金资助:
国家自然科学基金(61627812);国家重点研发计划(2018YFE0125900)

Homoepitaxial Boron Doped Single Crystal Diamond and Its Electrical Properties

WANG Ruozheng^1,2, YAN Xiuliang^1,2, PENG Bo^1,2, LIN Fang^1,2, WEI Qiang^1,2, WANG Hongxing^1,2

1. Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, Xi'an 710049, China;
2. Institute of Wide Band Gap Semiconductors and Quantum Devices, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China

Received:2022-02-04 Online:2022-05-15 Published:2022-06-17

摘要/Abstract

摘要： 突破高质量、高效金刚石掺杂技术是实现高性能金刚石功率电子器件的前提。本文利用微波等离子体化学气相沉积(MPCVD)法,以三甲基硼为掺杂源,制备出表面粗糙度0.35 nm,XRD(004)摇摆曲线半峰全宽28.4 arcsec,拉曼光谱半峰全宽3.05 cm^-1的高质量硼掺杂单晶金刚石。通过改变气体组分中硼元素的含量,实现了10¹⁶~10²⁰ cm^-3的p型金刚石可控掺杂工艺。随后,研究了硼碳比、生长温度、甲烷浓度等工艺条件对p型金刚石电学特性的影响,结果表明:在硼碳比20×10^-6、生长温度1 100 ℃、甲烷浓度8%、腔压160 mbar(1 mbar=100 Pa)时p型金刚石迁移率达到207 cm²/(V·s)。通过加氧生长可以提升硼掺杂金刚石结晶质量,降低杂质散射。当氧气浓度为0.8%时,样品空穴迁移率提升至 614 cm²/(V·s)。

关键词: 单晶金刚石, p型掺杂, 硼掺杂, MPCVD, 同质外延, 硼碳比, 甲烷浓度, 硼氧共掺, 空穴迁移率

Abstract: The breakthrough of high quality and high efficiency diamond doping is the premise of realizing high-performance diamond power electronic devices. In this paper, the homoepitaxial growth of high-quality boron doped single crystal diamond was prepared by MPCVD with trimethylboron as the source gas. The surface roughness is 0.35 nm, the full width at half maximum (FWHM) of XRD (004) rocking curves is 28.4 arcsec, and the FWHM of Raman spectrum is 3.05 cm^-1. By changing the boron concentration in the gas component, the controlled p-type diamond doping with the concentration from 10¹⁶ cm^-3 to 10²⁰ cm^-3 was realized. Then, the effects of deposition conditions such as B/C ratio, growth temperature and methane content on the electrical properties of p-type diamond were studied. The hole mobility of 207 cm²/(V·s) has been obtained with the B/C ratio of 20×10^-6, the growth temperature of 1 100 ℃, the CH₄/H₂ ratio of 8% and the chamber pressure of 160 mbar. Furthermore, the crystal quality of boron doped diamond can be improved with the adding of oxygen in the gas component, that is to say, reducing the impurity scattering. When the O₂/H₂ ratio is 0.8%, the hole mobility increases significantly to 614 cm²/(V·s).

Key words: single crystal diamond, p-type doping, boron doping, MPCVD, homoepitaxial, B/C ratio, methane concentration, B-O co-doping, hole mobility

中图分类号:

TQ163

王若铮, 闫秀良, 彭博, 林芳, 魏强, 王宏兴. 高质量硼掺杂单晶金刚石同质外延及电学性质研究[J]. 人工晶体学报, 2022, 51(5): 893-900.

WANG Ruozheng, YAN Xiuliang, PENG Bo, LIN Fang, WEI Qiang, WANG Hongxing. Homoepitaxial Boron Doped Single Crystal Diamond and Its Electrical Properties[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(5): 893-900.

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