无位错Te-GaSb(100)单晶抛光衬底的晶格完整性

人工晶体学报 ›› 2022, Vol. 51 ›› Issue (6): 1003-1011.

无位错Te-GaSb(100)单晶抛光衬底的晶格完整性

冯银红^1,2, 沈桂英^1,3,4, 赵有文^1,3,4,5, 刘京明¹, 杨俊¹, 谢辉¹, 何建军^3,4, 王国伟⁶

1.中国科学院半导体研究所,低维半导体材料与器件北京市重点实验室,中国科学院半导体材料科学重点实验室,北京 100083;
2.中国科学院大学,北京 100049;
3.如皋市化合物半导体产业研究所,如皋 226500;
4.江苏秦烯新材料有限公司,如皋 226500;
5.中国科学院大学材料科学与光电技术学院,北京 100049;
6.中国科学院半导体研究所,超晶格与微结构国家重点实验室,北京 100083

收稿日期:2022-02-28 出版日期:2022-06-15 发布日期:2022-07-18
通讯作者: 沈桂英,博士,助理研究员。E-mail:shenguiying @semi.ac.cn
作者简介:冯银红(1998—),女,河北省人,硕士研究生。E-mail:fengyinhong0801@semi.ac.cn
基金资助:
国家自然科学基金(61904175);江苏省重点研发计划(BE2020033)

Lattice Perfection of Dislocation-Free (100) Te-GaSb Single Crystal Polished Substrate

FENG Yinhong^1,2, SHEN Guiying^1,3,4, ZHAO Youwen^1,3,4,5, LIU Jingming¹, YANG Jun¹, XIE Hui¹, HE Jianjun^3,4, WANG Guowei⁶

1. Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2. University of Chinese Academy of Sciences, Beijing 100049, China;
3. Rugao Institute of Compound Semiconductor Industry, Rugao 226500, China;
4. Jiangsu Qinxi New Material Co., Ltd., Rugao 226500, China;
5. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
6. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2022-02-28 Online:2022-06-15 Published:2022-07-18

摘要/Abstract

摘要： 采用液封直拉(LEC)法批量生长的直径2英寸(1英寸=2.54 cm)n型Te-GaSb(100)单晶的位错腐蚀坑密度(EPD)通常低于300 cm^-2,达到无位错水平。本文利用X射线摇摆曲线以及倒易空间图(RSM)对这种GaSb单晶抛光衬底的晶格完整性和亚表面损伤情况进行了分析表征,结果表明经过工艺条件优化的化学机械抛光处理,GaSb单晶衬底表面达到原子级光滑,不存在亚表面损伤层。利用分子束外延在这种衬底上可稳定生长出高质量的Ⅱ类超晶格外延材料并呈现出优异的红外探测性能。在此基础上,对CaSb衬底材料的物性、生长制备和衬底加工条件之间的内在关系进行了综合分析。

关键词: GaSb, 衬底, 液封直拉法, 晶格完整性, 位错腐蚀坑密度, 倒易空间图, 亚表面损伤, 化合物半导体

Abstract: The dislocation etch pit density (EPD) of the 2-inch diameter n-type (100) Te-GaSb single crystal grown in batches by the liquid encapsulated Czochralski (LEC) method is usually lower than 300 cm^-2, reaching dislocation-free level. In this paper, the lattice perfection and subsurface damage of this GaSb single crystal polished substrate were characterized by X-ray rocking curve and reciprocal space map (RSM). The results show that after chemical mechanical polishing with optimized process conditions, the surface of GaSb single crystal substrate is atomically smooth, and there is no subsurface damaged layer. High-quality type-Ⅱ superlattice epitaxial materials can be stably grown on this substrate by molecular beam epitaxy and exhibit excellent infrared detection performance. On this basis, the internal relationship between the physical properties, growth preparation and substrate processing conditions of GaSb substrate materials was comprehensively analyzed.

Key words: GaSb, substrate, liquid encapsulated Czochralski method, lattice perfection, dislocation etch pit density, RSM, subsurface damage, compound semiconductor

中图分类号:

O786

冯银红, 沈桂英, 赵有文, 刘京明, 杨俊, 谢辉, 何建军, 王国伟. 无位错Te-GaSb(100)单晶抛光衬底的晶格完整性[J]. 人工晶体学报, 2022, 51(6): 1003-1011.

FENG Yinhong, SHEN Guiying, ZHAO Youwen, LIU Jingming, YANG Jun, XIE Hui, HE Jianjun, WANG Guowei. Lattice Perfection of Dislocation-Free (100) Te-GaSb Single Crystal Polished Substrate[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(6): 1003-1011.

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