铟镓共掺杂对n-ZnO纳米棒/p-GaN异质结生长行为和光电性能的影响

人工晶体学报 ›› 2022, Vol. 51 ›› Issue (6): 1012-1019.

铟镓共掺杂对n-ZnO纳米棒/p-GaN异质结生长行为和光电性能的影响

尹佳奇^1,2, 余春燕^1,2, 翟光美², 李天保^1,2, 张竹霞³

1.太原理工大学材料科学与工程学院,太原 030024;
2.太原理工大学,新材料界面科学与工程教育部重点实验室,太原 030024;
3.太原理工大学航空航天学院,太原 030024;
4.山西先进永磁材料与技术协同创新中心,临汾 041004

收稿日期:2022-03-12 出版日期:2022-06-15 发布日期:2022-07-18
通讯作者: 余春燕,博士,副教授。E-mail:yuchunyan75@163.com
作者简介:尹佳奇(1994—),男,安徽省人,硕士研究生。E-mail:yinjiaqi94@163.com
基金资助:
国家自然科学基金(61904120);山西省自然科学基金(201901D111109);厦门大学PCOSS开放项目(201928)

Effect of Indium and Gallium Co-Doping on Growth Behavior and Photoelectric Properties of n-ZnO Nanorods/p-GaN Heterojunction

YIN Jiaqi^1,2, YU Chunyan^1,2, ZHAI Guangmei², LI Tianbao^1,2, ZHANG Zhuxia³

1. College of Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024, China;
2. Key Laboratory of New Material Interface Science and Engineering Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China;
3. College of Aeronautics and Astronautics, Taiyuan University of Technology, Taiyuan 030024, China;
4. Collaborative Innovation Center for Shanxi Advanced Permanent Magnetic Materials and Technology, Linfen 041004, China

Received:2022-03-12 Online:2022-06-15 Published:2022-07-18

摘要/Abstract

摘要： 利用低温水热法在p-GaN薄膜上生长了铟(In)和镓(Ga)共掺杂的ZnO纳米棒。X射线衍射(XRD)、X射线光电子能谱(XPS)和X射线能量色谱仪(EDS)结果表明,In和Ga已固溶到ZnO晶格中。扫描电子显微镜(SEM)结果表明, ZnO纳米棒具有良好的c轴取向性,随着In和Ga共掺杂浓度的增加,纳米棒的直径减小,密度增加。XRD结果表明,In和Ga共掺杂引起ZnO晶格常数增大,导致(002)衍射峰向低角度方向偏移。同时,ZnO的光学性质受到In和Ga共掺杂的影响。与纯ZnO相比, 共掺杂ZnO纳米棒的紫外发射峰都出现轻微红移,这是表面共振和带隙重整效应综合作用的结果。I-V特性曲线表明,随着In和Ga共掺杂浓度的增加,n-ZnO纳米棒/p-GaN异质结具有更好的导电性。

关键词: In和Ga共掺杂, ZnO纳米棒, n-ZnO/p-GaN异质结, 低温水热法, 光学性质, 导电性, 光电性能

Abstract: ZnO nanorods co-doped with indium and gallium were grown on p-GaN films by low-temperature hydrothermal method. The results of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and energy dispersive spectroscopy (EDS) show that indium and gallium have been dissolved in the ZnO lattice. Scanning electron microscope (SEM) observation shows that ZnO nanorods have good c-axis orientation. With increasing indium and gallium co-doping concentration, the diameter of the nanorods decreases and the density increases. XRD results show that the incorporation of indium and gallium causes the lattice constant of ZnO to increase, resulting in the (002) diffraction peak shifting to a low angle direction. At the same time, the optical properties of ZnO are affected by the co-doping of In and Ga. The UV emission peaks of co-doped ZnO nanorods all show a slight red shift, which is the result of the combined effects of surface resonance and band gap reforming. The I-V characteristics curves show that the n-ZnO nanorods/p-GaN heterojunction has better conductivity with increasing indium and gallium co-doping concentration.

Key words: In and Ga co-doping, ZnO nanorod, n-ZnO/p-GaN heterojunction, low-temperature hydrothermal method, optical property, conductivity, photoelectric property

中图分类号:

TB383.1

尹佳奇, 余春燕, 翟光美, 李天保, 张竹霞. 铟镓共掺杂对n-ZnO纳米棒/p-GaN异质结生长行为和光电性能的影响[J]. 人工晶体学报, 2022, 51(6): 1012-1019.

YIN Jiaqi, YU Chunyan, ZHAI Guangmei, LI Tianbao, ZHANG Zhuxia. Effect of Indium and Gallium Co-Doping on Growth Behavior and Photoelectric Properties of n-ZnO Nanorods/p-GaN Heterojunction[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(6): 1012-1019.

参考文献

[1] KIM A, WON Y, WOO K, et al. Highly transparent low resistance ZnO/Ag nanowire/ZnO composite electrode for thin film solar cells[J]. ACS Nano, 2013, 7(2): 1081-1091.
[2] 刘巧平,李琼,耿雷英,等.Co掺杂浓度对ZnO纳米棒结构和光学性能影响研究[J].人工晶体学报,2019,48(6):1007-1011+1018.
LIU Q P, LI Q, GENG L Y, et al. Effect of co doping concentration on structure and optical properties of ZnO nanorod[J]. Journal of Synthetic Crystals, 2019, 48(6): 1007-1011+1018(in Chinese).
[3] ZHANG Q F, DANDENEAU C S, ZHOU X Y, et al. ZnO nanostructures for dye-sensitized solar cells[J]. Advanced Materials, 2009, 21(41): 4087-4108.
[4] ZHENG Y H, ZHENG L R, ZHAN Y Y, et al. Ag/ZnO heterostructure nanocrystals: synthesis, characterization, and photocatalysis[J]. Inorganic Chemistry, 2007, 46(17): 6980-6986.
[5] LI Z K, HUANG X T, LIU J P, et al. Morphology control and transition of ZnO nanorod arrays by a simple hydrothermal method[J]. Materials Letters, 2008, 62(10/11): 1503-1506.
[6] LOOK D C, CLAFLIN B, ALIVOV Y I, et al. The future of ZnO light emitters[J]. Physica Status Solidi (a), 2004, 201(10): 2203-2212.
[7] SCHRIER J, DEMCHENKO D O, WANG L W, et al. Optical properties of ZnO/ZnS and ZnO/ZnTe heterostructures for photovoltaic applications[J]. Nano Letters, 2007, 7(8): 2377-2382.
[8] YANG T P, ZHU H C, BIAN J M, et al. Room temperature electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD[J]. Materials Research Bulletin, 2008, 43(12): 3614-3620.
[9] CHEN C H, CHANG S J, CHANG S P, et al. Electroluminescence from n-ZnO nanowires/p-GaN heterostructure light-emitting diodes[J]. Applied Physics Letters, 2009, 95(22): 223101.
[10] DU G T, ZHAO W, WU G G, et al. Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes[J]. Applied Physics Letters, 2012, 101(5): 053503.
[11] POLSONGKRAM D, CHAMNINOK P, PUKIRD S, et al. Effect of synthesis conditions on the growth of ZnO nanorods via hydrothermal method[J]. Physica B: Condensed Matter, 2008, 403(19/20): 3713-3717.
[12] IVANOVA T, HARIZANOVA A, KOUTZAROVA T, et al. Optical and structural study of Ga and In co-doped ZnO films[J]. Colloids and Surfaces A: Physicochemical and Engineering Aspects, 2017, 532: 357-362.
[13] PANTIC S, SKODRIC S R, LONCAR Z, et al. Zinc oxide nanoparticles: potential novel applications in cellular physiology, pathology, neurosciences and cancer research[J]. Reviews on Advanced Materials Science, 2019, 58(1): 17-21.
[14] SUN Y G, HU J Q, WANG N, et al. Controllable hydrothermal synthesis, growth mechanism, and properties of ZnO three-dimensional structures[J]. New Journal of Chemistry, 2010, 34(4): 732.
[15] SEID E T, DEJENE F B. Gallium and indium co-doping effects on structural, optical and luminescence properties of ZnO nanostructures[J]. Materials Today Communications, 2021, 27: 102330.
[16] PARK G C, HWANG S M, LEE S M, et al. Hydrothermally grown in-doped ZnO nanorods on p-GaN films for color-tunable heterojunction light-emitting-diodes[J]. Scientific Reports, 2015, 5: 10410.
[17] SHAHEERA M, GIRIJA K G, KAUR M, et al. Elucidation of structural, morphological, optical and photoluminescence properties of single and (In, Ga) co-doped ZnO nanocrystalline thin films[J]. Bulletin of Materials Science, 2019, 42(6): 1-9.
[18] LIM J H, LEE S M, KIM H S, et al. Synergistic effect of indium and gallium co-doping on growth behavior and physical properties of hydrothermally grown ZnO nanorods[J]. Scientific Reports, 2017, 7: 41992.
[19] TSAY C Y, HSIAO I P, CHANG F Y, et al. Improving the photoelectrical characteristics of self-powered p-GaN film/n-ZnO nanowires heterojunction ultraviolet photodetectors through gallium and indium co-doping[J]. Materials Science in Semiconductor Processing, 2021, 121: 105295.
[20] LUNG C, TOMA M, POP M, et al. Characterization of the structural and optical properties of ZnO thin films doped with Ga, Al and (Al+Ga)[J]. Journal of Alloys and Compounds, 2017, 725: 1238-1243.
[21] WANG H, XIE J, YAN K P, et al. Growth mechanism of different morphologies of ZnO crystals prepared by hydrothermal method[J]. Journal of Materials Science & Technology, 2011, 27(2): 153-158.
[22] YANG J H, ZHENG J H, ZHAI H J, et al. Growth mechanism and optical properties of ZnO nanotube by the hydrothermal method on Si substrates[J]. Journal of Alloys and Compounds, 2009, 475(1/2): 741-744.
[23] QIU J J, LI X M, HE W Z, et al. The growth mechanism and optical properties of ultralong ZnO nanorod arrays with a high aspect ratio by a preheating hydrothermal method[J]. Nanotechnology, 2009, 20(15): 155603.
[24] WANG B G, CALLAHAN M J, XU C C, et al. Hydrothermal growth and characterization of indium-doped-conducting ZnO crystals[J]. Journal of Crystal Growth, 2007, 304(1): 73-79.
[25] DAI J, XU C X, NAKAMURA T, et al. Electron-hole plasma induced band gap renormalization in ZnO microlaser cavities[J]. Optics Express, 2014, 22(23): 28831-28837.
[26] YE J D, GU S L, ZHU S M, et al. Fermi-level band filling and band-gap renormalization in Ga-doped ZnO[J]. Applied Physics Letters, 2005, 86(19): 192111.
[27] LI R, YU C Y, DONG H L, et al. Effects of Ga_xZn_1-xO nanorods on the photoelectric properties of n-ZnO nanorods/p-GaN heterojunction light-emitting diodes[J]. RSC Adv, 2017, 7(78): 49613-49617.
[28] VANHEUSDEN K, SEAGER C H, WARREN W L, et al. Correlation between photoluminescence and oxygen vacancies in ZnO phosphors[J]. Applied Physics Letters, 1996, 68(3): 403-405.
[29] JIANG H, LU Y M, RONG X M, et al. Electroluminescence properties of a zinc oxide nanorod array heterojunction light-emitting diode[J]. Journal of Electronic Materials, 2020, 49(8): 4537-4543.
[30] HE H P, ZHUGE F, YE Z Z, et al. Strain and its effect on optical properties of Al-N codoped ZnO films[J]. Journal of Applied Physics, 2006, 99(2): 023503.
[31] 戴结林,江瑶瑶,尚凤娇,等.水热法制备In掺杂ZnO薄膜的表面形貌及其光学性质[J].硅酸盐通报,2015,34(5):1219-1222+1228.
DAI J L, JIANG Y Y, SHANG F J, et al. Surface pattern and optical properties of In-doped ZnO thin films by hydrothermal method[J]. Bulletin of the Chinese Ceramic Society, 2015, 34(5): 1219-1222+1228(in Chinese).
[32] YOU J B, ZHANG X W, ZHANG S G, et al. Electroluminescence behavior of ZnO/Si heterojunctions: energy band alignment and interfacial microstructure[J]. Journal of Applied Physics, 2010, 107(8): 083701.
[33] BABOO AGARWAL M, MALAIDURAI M, SHARMA A, et al. Effect of Al doping on hydrothermal growth and physical properties of doped ZnO nanoarrays for optoelectronic applications[J]. Materials Today: Proceedings, 2020, 21: 1781-1786.