极化方法对PZT-4压电陶瓷性能的影响

人工晶体学报 ›› 2022, Vol. 51 ›› Issue (9-10): 1794-1799.

• 研究论文 • 上一篇

极化方法对PZT-4压电陶瓷性能的影响

胡玉栋^1,2, 汪跃群³, 孔舒燕¹, 张文杰¹, 杨晓明¹, 王祖建¹, 苏榕冰¹, 龙西法^1,2, 何超^1,2

1.中国科学院福建物质结构研究所,福州 350002;
2.中国科学院大学,北京 100049;
3.中国船舶集团第七一五研究所,杭州 310023

收稿日期:2022-08-18 出版日期:2022-10-15 发布日期:2022-11-02
通信作者: 何超,博士,研究员。E-mail:hechao@fjirsm.ac.cn
作者简介:胡玉栋(1995—),男,湖北省人,硕士研究生。E-mail:huyudong@fjirsm.ac.cn。
何超,研究员,中国科学院青年创新促进会会员。主要从事弛豫铁电单晶、非线性光学晶体(LBO)、电光、磁光等光电功能晶体材料设计开发和大尺寸人工晶体生长。主持和参加了中国科学院先导B、重点部署、青年培育、科研仪器设备研制等项目,国家自然科学基金委重大研究计划、面上和青年基金,福建省科技厅工业引导项目等。在Acta Mater、Chem Mater、Chem Commun、J Mater Chem A、J Am Ceram Soc、J Eur Ceram Soc、Cryst Growth Des等期刊发表SCI论文60余篇,授权专利10余项。担任《人工晶体学报》青年编委,中国稀土学会稀土晶体专委会委员,中国仪表功能材料学会电子元器件关键材料与技术专委会委员。
基金资助:
国家自然科学基金(11904362,51902307);福建省工业引导项目(2020H0038,2021H0043)

Influence of Poling Methods on the Properties of PZT-4 Piezoelectric Ceramics

HU Yudong^1,2, WANG Yuequn³, KONG Shuyan¹, ZHANG Wenjie¹, YANG Xiaoming¹, WANG Zujian¹, SU Rongbing¹, LONG Xifa^1,2, HE Chao^1,2

1. Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhou 350002, China;
2. University of Chinese Academy of Sciences, Beijing 100049, China;
3. China State Shipbuilding Corporation 715 Research Institute, Hangzhou 310023, China

Received:2022-08-18 Online:2022-10-15 Published:2022-11-02

摘要/Abstract

摘要： Pb(Zr_1-xTi_x)O₃ (PZT)由于具有优异的综合性能而成为应用最广泛的压电陶瓷。之前研究工作证明了与直流极化(DCP)和交流极化(ACP)相比,采用交流极化和直流极化相结合的方法能进一步提高弛豫铁电单晶材料的压电性能。本工作报道了直流极化、交流极化和交流极化+直流极化后PZT-4压电陶瓷的介电性能和压电性能,探究了直流极化、交流极化和交流极化+直流极化的最佳极化条件。在最佳交流极化+直流极化条件下, PZT-4 压电陶瓷的压电常数(d₃₃)为350 pC/N,相比直流极化(305 pC/N)、交流极化(320 pC/N)分别提高了15%和9%。交流极化后的PZT-4陶瓷样品的应变值(0.08%)高于进行直流极化样品的(应变值0.05%),表明交流极化可以有效提高PZT-4陶瓷的应变值,但是交流极化后应变曲线的滞后增大不利于器件应用,交流极化对硬性压电陶瓷的影响还需要进一步探讨。

关键词: PZT, 交流极化, 压电陶瓷, 压电性能, 弛豫铁电单晶

Abstract: Pb(Zr_1-xTi_x)O₃(PZT) piezoelectric ceramics have been used extensively due to their comprehensive performance. Compared with direct current poling (DCP) and alternating current poling (ACP) methods, the combining DCP and ACP method can further improve the piezoelectric properties of relaxor-based ferroelectric single crystals. Here, the dielectric and piezoelectric properties of DCP, ACP, and ACP+DCP PZT-4 piezoelectric ceramics. The optimal poling conditions of DCP, ACP, and ACP+DCP were studied. The d₃₃ of ACP+DCP PZT-4 piezoelectric ceramics reported in this paper is 350 pC/N, which is 15% and 9% higher than that of DCP (305 pC/N) and ACP (320 pC/N) samples. The strain value under electric field of the ACP PZT-4 ceramic (0.08%) is higher than that of the DCP sample (0.05%), indicating that ACP can effectively improve the strain value of PZT-4 ceramics. However, the increased hysteresis of the strain curve for ACP sample is not conducive to application. The effect of ACP on hard PZT piezoelectric ceramics needs to be further explored.

Key words: PZT, alternating current poling, piezoelectric ceramics, piezoelectric property, relaxation ferroelectric single crystal

中图分类号:

TM282

胡玉栋, 汪跃群, 孔舒燕, 张文杰, 杨晓明, 王祖建, 苏榕冰, 龙西法, 何超. 极化方法对PZT-4压电陶瓷性能的影响[J]. 人工晶体学报, 2022, 51(9-10): 1794-1799.

HU Yudong, WANG Yuequn, KONG Shuyan, ZHANG Wenjie, YANG Xiaoming, WANG Zujian, SU Rongbing, LONG Xifa, HE Chao. Influence of Poling Methods on the Properties of PZT-4 Piezoelectric Ceramics[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(9-10): 1794-1799.

参考文献

[1] CHU S Y, CHEN T Y, TSAI I T. Effects of sintering temperature on the dielectric and piezoelectric properties of Nb-doped PZT ceramics and their applications[J]. Integrated Ferroelectrics, 2003, 58(1): 1293-1303.
[2] RICOTE J, WHATMORE R W, BARBER D J. Studies of the ferroelectric domain configuration and polarization of rhombohedral PZT ceramics[J]. Journal of Physics: Condensed Matter, 2000, 12(3): 323-337.
[3] ZHENG H, REANEY I M, LEE W E, et al. Effects of strontium substitution in Nb-doped PZT ceramics[J]. Journal of the European Ceramic Society, 2001, 21(10/11): 1371-1375.
[4] LIU X L, WANG G D, LI M Y, et al. Development of hard high-temperature piezoelectric ceramics for actuator applications[J]. Journal of Materials Science: Materials in Electronics, 2015, 26(12): 9350-9354.
[5] GUO R, CROSS L E, PARK S E, et al. Origin of the high piezoelectric response in PbZr_1-xTi_xO₃[J]. Physical Review Letters, 2000, 84(23): 5423-5426.
[6] VENKATRAGAVARAJ E, SATISH B, VINOD P R, et al. Piezoelectric properties of ferroelectric PZT-polymer composites[J]. Journal of Physics D: Applied Physics, 2001, 34(4): 487-492.
[7] BABU T A, RAMESH K V, BADAPANDA T, et al. Structural and electrical studies of excessively Sm₂O₃ substituted soft PZT nanoceramics[J]. Ceramics International, 2021, 47(22): 31294-31301.
[8] 肖正泉,缪强,罗豪甦.几种钙钛矿型晶体极化性能的从头算分子动力学研究[J].化学学报,2006,64(12):1209-1212.
XIAO Z Q MIAO Q, LUO H S. Ab initio molecular dynamics study on polarization property of selected perovskite structure crystals[J]. Acta Chimica Sinica, 2006, 64(12): 1209-1212(in Chinese).
[9] AMARANDE L, CIOANGHER M C, TOMA V, et al. Hard/soft effects of multivalence co-dopants in correlation with their location in PZT ceramics[J]. Ceramics International, 2021, 47(23): 33382-33389.
[10] HOU Y D, ZHU M K, TIAN C S, et al. Structure and electrical properties of PMZN-PZT quaternary ceramics for piezoelectric transformers[J]. Sensors and Actuators A: Physical, 2004, 116(3): 455-460.
[11] MARSILIUS M, GRANZOW T, JONES J L. Effect of electrical and mechanical poling history on domain orientation and piezoelectric properties of soft and hard PZT ceramics[J]. Science and Technology of Advanced Materials, 2011, 12(1): 015002.
[12] MOROZOV M I, EINARSRUD M A, TOLCHARD J R, et al. In-situ structural investigations of ferroelasticity in soft and hard rhombohedral and tetragonal PZT[J]. Journal of Applied Physics, 2015, 118(16): 164104.
[13] RANJAN R, KUMAR R, KUMAR N, et al. Impedance and electric modulus analysis of Sm-modified Pb(Zr_0.55Ti_0.45)_1-x/4O₃ ceramics[J]. Journal of Alloys and Compounds, 2011, 509(22): 6388-6394.
[14] TAKAHASHI S. Effects of impurity doping in lead zirconate-titanate ceramics[J]. Ferroelectrics, 1982, 41(1): 143-156.
[15] SLOUKA C, KAINZ T, NAVICKAS E, et al. The effect of acceptor and donor doping on oxygen vacancy concentrations in lead zirconate titanate (PZT)[J]. Materials, 2016, 9(11): E945.
[16] YI M X. Research on the polarization technology of PZT piezoelectric ceramic[J]. Piezoelectric & Acoustooptics, 2006, 28(6): 736-737.
[17] UNRUAN M, ANANTA S, LAOSIRITAWORN Y, et al. Effects of parallel and perpendicular compressive stresses on the dielectric and ferroelectric properties of soft PZT ceramics[J]. Ferroelectrics, 2010, 400(1): 144-154.
[18] FRÖMLING T, SCHINTLMEISTER A, HUTTER H, et al. Oxide ion transport in donor-doped Pb(Zr_xTi_1-x)O₃: the role of grain boundaries[J]. Journal of the American Ceramic Society, 2011, 94(4): 1173-1181.
[19] GALLO C A, SCHULZE W A. Alternating-current-assisted poling of lead zirconate titanate (PZT)[J]. Journal of the American Ceramic Society, 1987, 70(2): C-33.
[20] DEANGELIS D A, SCHULZE G W. Performance of PZT8 versus PZT4 piezoceramic materials in ultrasonic transducers[J]. Physics Procedia, 2016, 87: 85-92.
[21] RAMACHANDRAN V P, THOMAS D, VINOD T K. Design and development of a broadband spherical hydrophone using PZT-4[J].ISSS Journal of Micro and Smart Systems, 2020, 9(2): 163-171.
[22] JO W, RÖDEL J. Electric-field-induced volume change and room temperature phase stability of (Bi_1/2Na_1/2)TiO_3-x mol.% BaTiO₃ piezoceramics[J]. Applied Physics Letters, 2011, 99(4): 042901.
[23] LUO C, KARAKI T, YAMASHITA Y, et al. High temperature and low voltage AC poling for 0.24Pb(In_1/2Nb_1/2)O₃-0.46Pb(Mg_1/3Nb_2/3)O₃-0.30PbTiO₃ piezoelectric single crystals manufactured by continuous-feeding Bridgman method[J]. Journal of Materiomics, 2021, 7(3): 621-628.
[24] SUN Y Q, KARAKI T, FUJII T, et al. Enhanced electric property of relaxor ferroelectric crystals with low AC voltage high-temperature poling[J]. Japanese Journal of Applied Physics, 2020, 59(SP): SPPD08.
[25] CHANG W Y, CHUNG C C, LUO C T, et al. Dielectric and piezoelectric properties of 0.7 Pb(Mg_1/3Nb_2/3)O₃-0.3 PbTiO₃ single crystal poled using alternating current[J]. Materials Research Letters, 2018, 6(10): 537-544.
[26] TAO H, WU J G. New poling method for piezoelectric ceramics[J]. Journal of Materials Chemistry C, 2017, 5(7): 1601-1606.
[27] WAN H T, LUO C T, CHUNG C C, et al. Enhanced dielectric and piezoelectric properties of manganese-doped Pb(In_1/2Nb_1/2)O₃-Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ single crystals by alternating current poling[J]. Applied Physics Letters, 2021, 118(10): 102904.
[28] HONG C H, WANG Z J, SU B, et al. Enhanced piezoelectric and dielectric properties of Pb(Yb_1/2Nb_1/2)O₃-Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ crystals by combining alternating and direct current poling[J]. Journal of Applied Physics, 2021, 129(12): 124101.

极化方法对PZT-4压电陶瓷性能的影响

Influence of Poling Methods on the Properties of PZT-4 Piezoelectric Ceramics

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