MOCVD外延生长InN薄膜及其光学性质研究

人工晶体学报 ›› 2023, Vol. 52 ›› Issue (5): 791-797.

MOCVD外延生长InN薄膜及其光学性质研究

殷鑫燕, 陈鹏, 梁子彤, 赵红

南京大学电子科学与工程学院,江苏省光电功能材料重点实验室,南京 210023

收稿日期:2023-03-30 出版日期:2023-05-15 发布日期:2023-06-05
通信作者: 陈鹏,博士,教授。E-mail:pchen@nju.edu.cn;赵红,硕士,高工。E-mail:zhaohong@nju.edu.cn
作者简介:殷鑫燕,女,浙江省人,硕士研究生。E-mail:MG20230056@smail.nju.edu.cn
基金资助:
国家自然科学基金(12074182)

Epitaxial Growth and Optical Properties of InN film by MOCVD

YIN Xinyan, CHEN Peng, LIANG Zitong, ZHAO Hong

Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Science and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China

Received:2023-03-30 Online:2023-05-15 Published:2023-06-05

摘要/Abstract

摘要： 本文通过添加InGaN垫层,利用金属有机物化学气相沉积(MOCVD)方法在GaN(0001)上外延生长了InN薄膜,研究了InN薄膜的外延规律及光学性质。研究发现,相对于GaN表面,在InGaN垫层上可以获得更高质量的InN。通过在InGaN垫层中采用适当的In组分(在本工作中为In_0.23Ga_0.77N),可以完全抑制InN生长过程中铟滴的形成,获得的InN表面形貌连续平整。采用光学显微镜、高分辨率X射线衍射(HR-XRD)、透射电子显微镜(TEM)、光吸收和室温光致发光等方法研究了InN的晶体结构和光学性质。HR-XRD的ω和ω-2θ扫描显示,InGaN垫层消除了In滴的衍射信号,并且ω扫描给出了150 nm的InN薄膜的(0002)半峰全宽为0.23°。TEM选区电子衍射发现,InN几乎是无应变的。室温下InN薄膜的光吸收和强光致发光结果表明,所制备的InN薄膜能带隙约为0.74 eV。本文还初步研究了InN的异常激发依赖性的光致发光行为,证明了InN材料的表面效应对辐射复合的强烈作用。

关键词: InN, MOCVD, 外延生长, 应变, 表面缺陷, 光学性质, 光致发光

Abstract: Epitaxial growth of InN films on GaN (0001) by metal organic chemical vapor deposition (MOCVD) was investigated with adding an InGaN bedding layer. It is found that pure InN can be obtained on the InGaN bedding layer with quality higher than on bare GaN surface. By adopting proper In composition (In_0.23Ga_0.77N in this work) in the InGaN bedding layer, indium droplet formation can be totally suppressed during the growth of InN. The structure and optical properties of InN were investigated by using optical microscopy, high-resolution X-ray diffraction (HR-XRD), transmission electron microscopy (TEM), photoabsorption and photoluminescence at room temperature. From the HR-XRD measurements, the ω and ω-2θ scans show the elimination of In diffraction signal by using the InGaN bedding layer and the ω scan gives a linewidth of 0.23° for 150 nm InN film. From the selective area electron diffraction pattern in the TEM, the InN is found to be almost strain free. Both photoabsorption and strong photoluminescence of InN film at room temperature indicate that the energy band gap of the InN is about 0.74 eV. Abnormal excitation-dependent photoluminescence behavior of the InN was preliminarily investigated too. It is proved that the surface effect of InN materials has a strong effect on the radiation recombination.

Key words: InN, MOCVD, epitaxial growth, strain, surface defect, optical property, photoluminescence

中图分类号:

殷鑫燕, 陈鹏, 梁子彤, 赵红. MOCVD外延生长InN薄膜及其光学性质研究[J]. 人工晶体学报, 2023, 52(5): 791-797.

YIN Xinyan, CHEN Peng, LIANG Zitong, ZHAO Hong. Epitaxial Growth and Optical Properties of InN film by MOCVD[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(5): 791-797.

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