Ni掺杂β-Ga2O3单晶的光、电特性研究

人工晶体学报 ›› 2023, Vol. 52 ›› Issue (8): 1373-1377.

• 研究论文 • 下一篇

Ni掺杂β-Ga₂O₃单晶的光、电特性研究

陈绍华¹, 穆文祥¹, 张晋¹, 董旭阳¹, 李阳¹, 贾志泰^1,2, 陶绪堂¹

1.山东大学,新一代半导体材料研究院,晶体材料国家重点实验室,济南 250100;
2.山东工业技术研究院,济南 250100

收稿日期:2023-03-01 出版日期:2023-08-15 发布日期:2023-08-21
通信作者: 穆文祥,博士,副教授。E-mail:mwx@sdu.edu.cn
贾志泰,博士,教授。E-mail:z.jia@sdu.edu.cn
作者简介:陈绍华(1998—),男,山东省人,硕士研究生。E-mail:1072114408@qq.com
基金资助:
国家自然科学基金(52002219,51932004,61975098);广东省重点领域研发计划(2020B010174002);深圳市基础研究计划(JCYJ20210324132014038);111工程2.0(BP2018013)

Optical and Electrical Properties of Ni-Doped β-Ga₂O₃ Single Crystal

CHEN Shaohua¹, MU Wenxiang¹, ZHANG Jin¹, DONG Xuyang¹, LI Yang¹, JIA Zhitai^1,2, TAO Xutang¹

1. State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China;
2. Shandong Research Institute of Industrial Technology, Jinan 250100, China

Received:2023-03-01 Online:2023-08-15 Published:2023-08-21

摘要/Abstract

摘要： 本文使用导模(EFG)法生长了Ni掺杂β-Ga₂O₃单晶,并通过粉末X射线衍射(PXRD)和劳厄衍射(Laue diffraction)分别验证了其晶体结构和晶体质量。进一步通过紫外-可见-近红外透过光谱及红外透过光谱研究了Ni²⁺掺杂对β-Ga₂O₃光学特性的影响,发现其(100)面的紫外截止边为252.9 nm,对应的光学带隙为4.74 eV。此外,阴极荧光(CL)光谱测试结果显示,Ni²⁺掺杂β-Ga₂O₃单晶在600~800 nm具有宽带近红外发光特性,有望拓宽β-Ga₂O₃单晶材料在宽带近红外方面的应用。

关键词: 氧化镓, 宽禁带半导体, 光电性能, 宽带近红外发光, 导模法, Ni掺杂

Abstract: Ni-doped β-Ga₂O₃ single crystals were grown by edge-defined film-fed growth (EFG) method, and the crystal structure and quality were verified by powder X-ray diffraction (PXRD) and Laue diffraction. The effect of Ni²⁺ doping on optical properties of β-Ga₂O₃ was investigated by UV-Vis-NIR transmission spectra and infrared transmission spectra. It is found that the ultraviolet cut-off edge of (100) plane is 252.9 nm and corresponding optical bandgap is 4.74 eV. Furthermore, the broadband near-infrared luminescent property of Ni-doped β-Ga₂O₃ was discovered by cathodoluminescence (CL) spectroscopy in the range from 600 nm to 800 nm, which is expected to broaden the application of β-Ga₂O₃ crystal in broadband near-infrared.

Key words: Ga₂O₃, wide-bandgap semiconductor, optical and electrical property, broadband near-infrared luminescent, EFG method, Ni doping

中图分类号:

陈绍华, 穆文祥, 张晋, 董旭阳, 李阳, 贾志泰, 陶绪堂. Ni掺杂β-Ga₂O₃单晶的光、电特性研究[J]. 人工晶体学报, 2023, 52(8): 1373-1377.

CHEN Shaohua, MU Wenxiang, ZHANG Jin, DONG Xuyang, LI Yang, JIA Zhitai, TAO Xutang. Optical and Electrical Properties of Ni-Doped β-Ga₂O₃ Single Crystal[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(8): 1373-1377.

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Ni掺杂β-Ga₂O₃单晶的光、电特性研究

Optical and Electrical Properties of Ni-Doped β-Ga₂O₃ Single Crystal

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