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人工晶体学报 ›› 2024, Vol. 53 ›› Issue (10): 1675-1687.

• 综合评述 • 上一篇    下一篇

金刚石化学机械抛光研究进展

安康1, 许光宇1, 吴海平1, 张亚琛1, 张永康1, 李利军1, 李鸿1, 张旭芳2, 刘峰斌1, 李成明3   

  1. 1.北方工业大学机械与材料工程学院,北京 100144;
    2.北方工业大学信息学院,北京 100144;
    3.北京科技大学新材料技术研究院,北京 100083
  • 收稿日期:2024-07-08 出版日期:2024-10-15 发布日期:2024-10-21
  • 通信作者: 刘峰斌,博士,教授。E-mail:fbliu@ncut.edu.cn;李成明,博士,教授。E-mail:chengmli@mater.ustb.edu.cn
  • 作者简介:安 康(1989—),男,山东省人,博士,副教授。E-mail:ankang@ncut.edu.cn
  • 基金资助:
    国家自然科学基金区域联合基金项目(U23A2025);国家自然科学基金(52102034);北方工业大学组织科研基金(2023YZZKY12)

Research Progress in Chemical Mechanical Polishing of Diamond

AN Kang1, XU Guangyu1, WU Haiping1, ZHANG Yachen1, ZHANG Yongkang1, LI Lijun1, LI Hong1, ZHANG Xufang2, LIU Fengbin1, LI Chengming3   

  1. 1. School of Mechanical and Materials Engineering, North China University of Technology, Beijing 100144, China;
    2. School of Information Science and Technology, North China University of Technology, Beijing 100144, China;
    3. Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
  • Received:2024-07-08 Online:2024-10-15 Published:2024-10-21

摘要: 金刚石以优异的性能在力学、光学、热学和电子学(如半导体)等领域发挥着重要作用。然而,金刚石表面质量会影响其在这些领域的应用效果,因此通过高效抛光技术获得高质量表面一直是金刚石研究的重点内容。金刚石抛光技术主要有机械抛光、热化学抛光、激光抛光和化学机械抛光等,其中化学机械抛光(CMP)具有设备运行成本低、工艺简单、抛光后表面损伤小等优点。本文在对上述几种抛光方法进行分析对比的基础上,聚焦于CMP领域,对其发展历程进行了较详尽的对比与分析。早期CMP技术虽在工艺和抛光效率上存在一定局限,但为后续技术的创新与优化奠定了基础;H2O2及其混合物的应用,不仅增强了CMP过程中的化学反应活性,提高了材料去除率,还有效降低了表面粗糙度,改善了金刚石表面质量;光催化辅助化学机械抛光可使金刚石达到高表面质量,但设备相对复杂,无法满足大规模生产的需求,需要进一步研究和优化。此外,本文还对化学机械抛光的未来发展进行了预测,为相关领域研究人员提供参考。

关键词: 金刚石, 化学机械抛光, 表面粗糙度, 抛光液, 去除机理

Abstract: Diamond plays a significant role in the fields of mechanics, optics, thermology and electronics (such as semiconductors) with its excellent properties. However, the surface quality of diamond affects its application in these areas. Therefore, obtaining high-quality surfaces through efficient polishing technology has always been a focus of diamond research. The main diamond polishing technologies include mechanical polishing, thermochemical polishing, laser polishing and chemical mechanical polishing, among which chemical mechanical polishing (CMP) has the advantages of low equipment operating costs, simple process, and minimal surface damage after polishing. Based on the analysis and comparison of the above polishing methods, this paper focuses on the field of CMP and makes a detailed comparison and analysis of its development history. Although the early CMP technology had certain limitations in process and polishing efficiency, it lays the foundation for the innovation and optimization of the subsequent technology; the application of H2O2 and its mixtures not only enhances the chemical reaction activity in the process of CMP and improves the material removal rate, but also effectively reduces the surface roughness and improves the surface quality of diamond; the photocatalytic assisted chemical mechanical polishing can enable diamond to achieve a high surface quality, but the equipment is relatively complicated and cannot meet the demand of mass production, which needs further research and optimization. In addition, this paper also predicts the future development of chemical mechanical polishing to provide reference for researchers in related fields.

Key words: diamond, chemical mechanical polishing, surface roughness, polishing solution, removal mechanism

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