GaFeO3∶Mg晶体的生长及磁学性能研究

人工晶体学报 ›› 2024, Vol. 53 ›› Issue (10): 1699-1704.

GaFeO₃∶Mg晶体的生长及磁学性能研究

王文凯^1,2, 潘秀红², 胡雨青³, 刘学超², 陈小红¹, 陈锟², 方婧红², 贺欢², 倪津崎²

1.上海理工大学材料与化学学院,上海 200093;
2.中国科学院上海硅酸盐研究所,上海 200050;
3.安徽工业大学材料科学与工程学院,马鞍山 243002

收稿日期:2024-06-24 出版日期:2024-10-15 发布日期:2024-10-21
通信作者: 潘秀红,博士,正高级工程师。E-mail:xhpan@mail.sic.ac.cn
作者简介:王文凯(1998—),男,安徽省人,硕士研究生。E-mail:1768771739@qq.com
基金资助:
国家重点研发计划(2021YFA0716304);中国载人航天项目(YYMT1201-EXP02);上海市科技项目(22511100300, 23DZ2201500)

Growth and Magnetic Properties of GaFeO₃∶Mg Crystals

WANG Wenkai^1,2, PAN Xiuhong², HU Yuqing³, LIU Xuechao², CHEN Xiaohong¹, CHEN Kun², FANG Jinghong², HE Huan², NI Jinqi²

1. School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai 200093, China;
2. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;
3. School of Materials Science and Engineering, Anhui University of Technology, Maanshan 243002, China

Received:2024-06-24 Online:2024-10-15 Published:2024-10-21

摘要/Abstract

摘要： 本文利用光学浮区法生长出了直径为7 mm的铁电单晶Mg_xGa_1-xFeO₃(x=0.02、0.05、0.07和0.10),研究了Mg²⁺对GaFeO₃(GFO)晶体饱和磁化强度和磁性转变温度的作用。通过XRD测试了晶体的结构和物相,结果显示,所有制备的晶体样品对应标准晶体卡库GFO(PDF#76-1005)的衍射特征,无其他杂相出现。XRD精修结果表明,该晶体结构为正交结构,空间群为Pna2₁,晶格常数和晶胞体积随着Mg²⁺掺杂量的增加,呈现先增加后减小的趋势。通过综合物性测量系统研究了晶体的磁性能,结果表明,磁性转变温度和饱和磁化强度随着Mg²⁺掺杂量的增加,同样呈现先增加后减小的趋势。当Mg²⁺掺杂量x=0.07时,磁性转变温度和饱和磁化强度达到最大,分别为187.82 K、8.75 emu/g,达到了掺杂改性的目的。

关键词: 铁电单晶, GaFeO₃∶Mg, 光学浮区法, 饱和磁化强度, 磁性转变温度, 矫顽场

Abstract: Multiferroic materials can realize the mutual coupling between force, electricity, magnetism and other physical fields, and have important application prospects in the field of small size, fast response and low power consumption of magnetoelectric devices. GaFeO₃ is a highly promising multiferroic material featuring high spontaneous magnetization and polarization beyond room temperature. In this study, Ferroelectric Mg_xGa_1-xFeO₃ (x=0.02, 0.05, 0.07 and 0.10) single crystals with a diameter of about 7 mm were grown by light floating zone method. The effect of Mg²⁺ on the saturation magnetization and magnetic transition temperature of GaFeO₃ (GFO) crystals were studied. The structure and phase of the crystal were analyzed through XRD, the results show that all the prepared samples correspond to the diffraction characteristics of the standard crystal card library GFO (PDF#76-1005), and no other heterophase appears. The XRD refinement results indicate that, the crystal structure is orthogonal and its space group is Pna2₁. As the concentration of Mg²⁺ rises, the lattice constant and cell volume initially increase and subsequently decrease. Additionlly, the magnetic properties of the crystal were studied through a comprehensive physical property measurement system, the magnetic transition temperature and saturation magnetization of the grown crytals also increase firstly and then decrease with the increase of Mg²⁺ doping content. When the Mg²⁺ doping amount is 0.07, the magnetic transition temperature and saturation magnetization reach the maximum values of 187.82 K and 8.75 emu/g, respectively, which achieves the purpose of doping modification.

Key words: ferroelectric single crystal, GaFeO₃∶Mg, optical floating zone method, saturation magnetization, magnetic transition temperature, coercive field

中图分类号:

O782

王文凯, 潘秀红, 胡雨青, 刘学超, 陈小红, 陈锟, 方婧红, 贺欢, 倪津崎. GaFeO₃∶Mg晶体的生长及磁学性能研究[J]. 人工晶体学报, 2024, 53(10): 1699-1704.

WANG Wenkai, PAN Xiuhong, HU Yuqing, LIU Xuechao, CHEN Xiaohong, CHEN Kun, FANG Jinghong, HE Huan, NI Jinqi. Growth and Magnetic Properties of GaFeO₃∶Mg Crystals[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(10): 1699-1704.

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GaFeO₃∶Mg晶体的生长及磁学性能研究

Growth and Magnetic Properties of GaFeO₃∶Mg Crystals

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