高温高压合成掺杂金刚石研究进展

摘要/Abstract

摘要： 金刚石具有超高热导率、宽禁带等优点,通过掺杂引入电子和空穴等缺陷,提升载流子浓度,可以使金刚石具有适合半导体应用的电导率,被称为第三代终极宽禁带半导体材料。本文首先介绍了金刚石单晶的高温高压合成方法,接着系统综述了基于高温高压法的金刚石掺杂研究现状和发展,然后分析了N、B、P和S等单元素掺杂及多元素共掺杂对金刚石晶体生长和电学性能的影响,并且对第一性原理计算研究金刚石掺杂进行了分析总结。高温高压退火可以有效改变金刚石中掺杂元素与空位等缺陷组合和分布状态,本文明晰了金刚石中含氮色心形成的原因及高温高压退火对色心的调控机制。最后对金刚石掺杂以及掺杂后金刚石的光学性能和电学性能研究前景进行了展望,指出可进一步探索多元素共掺杂的理论与实验方法,对提升掺杂金刚石性能具有重要意义。

关键词: 金刚石, 高温高压, 掺杂, 含氮色心, 退火, 第一性原理计算

Abstract: Diamond possesses an ultra-high thermal conductivity and a wide band-gap. Its electrical resistance could be adjusted for the semiconductor application by increasing the electron and vacancy content introduced by doping different elements. Therefore, diamond is thought to be the final wide band-gap semiconductor materials. This paper firstly introduces the synthesis of diamond by high-pressure and high-temperature (HPHT) method, and then systematically reviews the current status and developments of diamond doping by HPHT. The effects of single-element doping, such as N, B, P, and S, as well as multi-elements co-doping in the diamond crystal growth and its electrical properties are analyzed. In additional, this paper summaries the study diamond doping using first-principle calculation. HPHT annealing could effectively change the combinations of doped elements and the associated vacancies and their distribution. This paper reviews the adjustment of nitrogen-related color centers in diamond by HPHT annealing, elucidating the formation mechanisms of various nitrogen-related color centers. Finally, This paper prospects the potential optical and electrical properties of doped diamonds, highlighting the importance of theoretical calculations and experimental methods for multi-element co-doping investigation to enhance the performance of doped diamonds.

Key words: diamond, HPHT, doping, nitrogen-vacancy center, annealing, first-principle calculation

中图分类号:

O78
TQ163

郝敬林, 邓丽芬, 王凯悦, 宋惠, 江南, 西村一仁. 高温高压合成掺杂金刚石研究进展[J]. 人工晶体学报, 2024, 53(2): 194-209.

HAO Jinglin, DENG Lifen, WANG Kaiyue, SONG Hui, JIANG Nan, KAZUHITO Nishimura. Synthesis of Doped Diamond by High-Pressure and High-Temperature: a Review[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(2): 194-209.

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