关键词: 锗单晶, 探测器, 迁移率, 载流子浓度, 位错密度

Abstract: 13N ultra-high purity germanium single crystal is the core material for producing ultra-high purity germanium detectors. This article obtains reduced germanium ingots by reduction method, then purifies them by horizontal zone refining method to obtain 12N high-purity germanium polycrystals, and finally grows 13N ultra-high purity germanium single crystals by Czochralski method. The performance of 13N ultra-high purity germanium single crystal was tested and studied through low-temperature Hall test, dislocation density test, and deep level transient spectroscopy (DLTS) detection. The low-temperature Hall results show that the average mobility of the crystal head cross-section is 4.515×10⁴ cm²·V^-1·s^-1, the carrier concentration is 1.176×10¹⁰ cm^-3, and the conductivity is p-type, the dislocation density at the crystal head is 2 256 cm^-2. The average mobility of the tail section is 4.620×10⁴ cm²·V^-1·s^-1, the carrier concentration is 1.007×10¹⁰ cm^-3, and the conductivity type is p-type, the dislocation density at the tail of the crystal is 2 589 cm^-2. The concentration of deep level impurities in the crystal is 1.843×10⁹ cm^-3. The results indicate that the crystal is 13N ultra-high purity germanium single crystal.

Key words: germanium single crystal, detector, mobility, carrier concentration, dislocation density