微纳级GaN基VCSEL中周期反射结构与电子阻挡层的设置作用分析

人工晶体学报 ›› 2024, Vol. 53 ›› Issue (8): 1337-1343.

微纳级GaN基VCSEL中周期反射结构与电子阻挡层的设置作用分析

祝震宇¹, 贾志刚^1,2, 董海亮^1,2, 许并社^1,2,3

1.太原理工大学新材料界面科学与工程教育部重点实验室,太原 030024;
2.山西浙大新材料与化工研究院,太原 030024;
3.陕西科技大学材料原子·分子科学研究所,西安 710021

收稿日期:2024-03-08 出版日期:2024-08-15 发布日期:2024-08-14
通信作者: 许并社,博士,教授。E-mail:xubs@tyut.edu.cn
作者简介:祝震宇(1998—),男,浙江省人,硕士研究生。E-mail:zhuzhenyu1936@163.com
基金资助:
国家自然科学基金(21972103,61904120,61604104,51672185);山西浙大新材料与化工研究院研发项目(2021SX-AT001,2021SX-AT002)

Analysis of the Role of Periodic Reflective Structures and Electron Blocking Layer Setup in Micro-Nano GaN-Based VCSEL

ZHU Zhenyu¹, JIA Zhigang^1,2, DONG Hailiang^1,2, XU Bingshe^1,2,3

1. Key Laboratory of Interface Science and Engineering in Advanced Materials Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China;
2. Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030024, China;
3. Institute of Atomic and Molecular Science, Shanxi University of Science and Technology, Xi’an 710021, China

Received:2024-03-08 Online:2024-08-15 Published:2024-08-14

摘要/Abstract

摘要： 氮化镓(GaN)基微纳米结构生长技术的成熟为微纳级GaN基垂直腔面发射激光器(VCSEL)的制备提供了新的途径。本文设计了基于GaN基轴向异质结微纳米柱的微纳级VCSEL结构,采用Al_0.8Ga_0.2N/In_0.2Ga_0.8N应变补偿结构作为上下分布式布拉格反射镜(DBR),其中Al_0.8Ga_0.2N层的Al组分远高于传统结构中的电子阻挡层(EBL),能够更好地起到电子阻挡的作用。本文使用商用软件PICS3D构建了电子阻挡层处于不同位置的VCSEL数理模型,并进行数值模拟计算,探索和分析物理机理,解释了不同位置EBL对空穴注入效率的影响。结果表明,采用Al_0.8Ga_0.2N与In_0.2Ga_0.8N组成的应变补偿DBR可以更好地提高空穴注入效率,优化器件光电性能。

关键词: Ⅲ族氮化物, 垂直腔面发射激光器, 空穴注入效率, 微纳米结构, 应变补偿DBR, 电子阻挡层

Abstract: The maturation of GaN-based micro-nano structure growth methodologies have forged an innovative frontier in the fabrication of micro-nano GaN-based vertical cavity surface emitting lasers (VCSELs). This study delineates a sophisticated micro-nano VCSEL architecture founded on GaN axial heterostructures in the configuration of nanowires, incorporating Al_0.8Ga_0.2N/In_0.2Ga_0.8N strain-compensated structures as top and bottom distributed Bragg reflector (DBR). Notably, the Al composition in the Al_0.8Ga_0.2N layer far surpasses that in conventional structures, enhancing its effectiveness as an electron barrier, obviating the need for the electron blocking layer (EBL) traditionally employed as an electron-blocking mechanism. Furthermore, the influence of EBL on hole injection is meticulously examined. In pursuit of refining the hole injection efficiency of GaN-based VCSELs, a numerical model featuring EBL at distinct positions is formulated using commercial software PICS3D, followed by numerical simulations and analyses that delve into the intricate physical mechanisms. The results underscore that the integration of a strain-compensated DBR, comprised of Al_0.8Ga_0.2N and In_0.2Ga_0.8N, coupled with the elimination of EBL in traditional configurations, markedly enhances hole injection efficiency, thereby optimizing the optoelectronic performance of the device.

Key words: Ⅲ nitride, vertical cavity surface emitting laser, hole injection efficiency, micro-nano structure, strain-compensated DBR, electron blocking layer

中图分类号:

TN248

祝震宇, 贾志刚, 董海亮, 许并社. 微纳级GaN基VCSEL中周期反射结构与电子阻挡层的设置作用分析[J]. 人工晶体学报, 2024, 53(8): 1337-1343.

ZHU Zhenyu, JIA Zhigang, DONG Hailiang, XU Bingshe. Analysis of the Role of Periodic Reflective Structures and Electron Blocking Layer Setup in Micro-Nano GaN-Based VCSEL[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(8): 1337-1343.

参考文献

[1] LI C Y, LU H H, TSAI W S, et al. A 5 m/25 Gbps underwater wireless optical communication system[J]. IEEE Photonics Journal, 2018, 10(3): 7904909.
[2] YEH P S, CHANG C C, CHEN Y T, et al. GaN-based vertical-cavity surface emitting lasers with sub-milliamp threshold and small divergence angle[J]. Applied Physics Letters, 2016, 109(24): 241103.
[3] YU H C, ZHENG Z W, MEI Y, et al. Progress and prospects of GaN-based VCSEL from near UV to green emission[J]. Progress in Quantum Electronics, 2018, 57: 1-19.
[4] COSENDEY G, CASTIGLIA A, ROSSBACH G, et al. Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate[J]. Applied Physics Letters, 2012, 101(15): 151113.
[5] MATSUI K, KOZUKA Y, IKEYAMA K, et al. GaN-based vertical cavity surface emitting lasers with periodic gain structures[J]. Japanese Journal of Applied Physics, 2016, 55(5S): 05FJ08.
[6] IKEYAMA K, KOZUKA Y, MATSUI K, et al. Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors[J]. Applied Physics Express, 2016, 9(10): 102101.
[7] IVE T, BRANDT O, KOSTIAL H, et al. Crack-free and conductive Si-doped AlN/GaN distributed Bragg reflectors grown on 6H-SiC(0001)[J]. Applied Physics Letters, 2004, 85(11): 1970-1972.
[8] HUANG G S, LU T C, YAO H H, et al. Crack-free GaN/AlN distributed Bragg reflectors incorporated with GaN/AlN superlattices grown by metalorganic chemical vapor deposition[J]. Applied Physics Letters, 2006, 88(6): 061904-1.
[9] KAO C C, PENG Y C, YAO H H, et al. Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta₂O₅/SiO₂ distributed Bragg reflector[J]. Applied Physics Letters, 2005, 87(8): 081105.
[10] WENG G E, MEI Y, LIU J P, et al. Low threshold continuous-wave lasing of yellow-green InGaN-QD vertical-cavity surface-emitting lasers[J]. Optics Express, 2016, 24(14): 15546-15553.
[11] KASAHARA D, MORITA D, KOSUGI T, et al. Demonstration of blue and green GaN-based vertical-cavity surface-emitting lasers by current injection at room temperature[J]. Applied Physics Express, 2011, 4(7): 072103.
[12] LIU W J, HU X L, YING LEI-YING, et al. Room temperature continuous wave lasing of electrically injected GaN-based vertical cavity surface emitting lasers[J]. Applied Physics Letters, 2014, 104(25): 251116.
[13] WU Y P, XIAO Y X, NAVID I, et al. InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering[J]. Light: Science & Applications, 2022, 11: 294.
[14] ALONSO-ORTS M, HÖTZEL R, GRIEB T, et al. Correlative analysis on InGaN/GaN nanowires: structural and optical properties of self-assembled short-period superlattices[J]. Discover Nano, 2023, 18(1): 27.
[15] LI C Y, LIU S, LUK T S, et al. Intrinsic polarization control in rectangular GaN nanowire lasers[J]. Nanoscale, 2016, 8(10): 5682-5687.
[16] ZUBIA D, HERSEE S D. Nanoheteroepitaxy: the Application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials[J]. Journal of Applied Physics, 1999, 85(9): 6492-6496.
[17] LU T C, CHEN S W, WU T T, et al. Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature[J]. Applied Physics Letters, 2010, 97(7): 071114.
[18] KATSURAGAWA M, SOTA S, KOMORI M, et al. Thermal ionization energy of Si and Mg in AlGaN[J]. Journal of Crystal Growth, 1998, 189/190(1/2): 528-531.
[19] VERZELLESI G, SAGUATTI D, MENEGHINI M, et al. Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies[J]. Journal of Applied Physics, 2013, 114(7): 071101.
[20] HAN S H, LEE D Y, LEE S J, et al. Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes[J]. Applied Physics Letters, 2009, 94(23): 231123.
[21] YANG Y, CAO X A, YAN C H. Investigation of the nonthermal mechanism of efficiency rolloff in InGaN light-emitting diodes[J]. IEEE Transactions on Electron Devices, 2008, 55(7): 1771-1775.
[22] MUKAI T, YAMADA M, SHUJINAKAMURA S. Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes[J]. Japanese Journal of Applied Physics, 1999, 38(7A): 3976.
[23] 张君华, 贾志刚, 董海亮, 等. AlGaInN/InGaN应变补偿DBR结构设计[J]. 人工晶体学报, 2023, 52(3): 452-459.
ZHANG J H, JIA Z G, DONG H L, et al. Design of AlGaInN/InGaN strain-compensation DBR structure[J]. Journal of Synthetic Crystals, 2023, 52(3): 452-459 (in Chinese).
[24] LI C K, WU Y R. Study on the current spreading effect and light extraction enhancement of vertical GaN/InGaN LEDs[J]. IEEE Transactions on Electron Devices, 2012, 59(2): 400-407.
[25] HAN L, GAO Y B, HANG S, et al. Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes[J]. Chinese Optics Letters, 2022, 20(3): 031402.