光伏单晶硅切割片断裂强度的仿真分析与实验研究

人工晶体学报 ›› 2024, Vol. 53 ›› Issue (8): 1369-1377.

光伏单晶硅切割片断裂强度的仿真分析与实验研究

谭慧莹¹, 邢旭^1,2, 葛培琪^1,3, 毕文波^1,3

1.山东大学机械工程学院,济南 250061;
2.青岛高测科技股份有限公司,青岛 266114;
3.山东大学高效洁净机械制造教育部重点实验室,济南 250061

收稿日期:2024-03-04 出版日期:2024-08-15 发布日期:2024-08-14
通信作者: 葛培琪,教授。E-mail:pqge@sdu.edu.cn
作者简介:谭慧莹(1999—),女,山东省人,硕士研究生。E-mail:745956726@qq.com
基金资助:
山东省重点研发计划(重大科技创新工程)(2022CXGC010201);国家自然科学基金(52175418)

Simulation Analysis and Experimental Research on the Fracture Strength of Photovoltaic Monocrystalline Silicon Slicing Wafers

TAN Huiying¹, XING Xu^1,2, GE Peiqi^1,3, BI Wenbo^1,3

1. School of Mechanical Enigineering, Shandong University, Jinan 250061, China;
2. Qingdao Gaoce Technology CO., LTD., Qingdao 266114, China;
3. Key Laboratory of High Efficiency and Clean Mechanical Manufacture, Ministry of Education, Shandong University, Jinan 250061, China

Received:2024-03-04 Online:2024-08-15 Published:2024-08-14

摘要/Abstract

摘要： 单晶硅被广泛应用于光伏行业,随着切片加工厚度的逐步减小和锯丝的细径化,切片过程中存在的黏附等现象导致单晶硅切割片发生弯曲甚至断裂,进而引起破片率的提高,对光伏太阳能电池的成本造成较大影响。本工作针对光伏单晶硅片切割加工过程,采用三轴弯曲实验,测量并分析硅片的断裂强度及相应的破片率,利用有限元方法建立硅切割片断裂强度的三维仿真分析模型。研究结果表明:硅切割片断裂强度分散性大,平均断裂强度为97.7 MPa;硅切割片的弯曲刚度随着厚度减小而降低,平均弯曲刚度为441.2 N/m,当厚度规格为60 μm时,弯曲刚度最低,达103.5 N/m;硅切割片的破片率范围随着厚度的减小而增大,60 μm厚度的切割片破片率范围最大,为0.6%~99.9%。仿真与实验结果基本一致,表明仿真模型及方法适用于光伏单晶硅切割片的断裂强度和破片率的模拟分析。

关键词: 光伏单晶硅, 切割加工, 断裂强度, 有限元分析, 厚度, 破片率

Abstract: Monocrystalline silicon is widely used in the photovoltaic industry. As the thickness of wafer processing gradually decreases and the wire saw diameter becomes smaller, phenomena such as adhesion during the slicing process lead to bending or even breaking of the photovoltaic monocrystalline silicon slices, which in turn increases the breakage rate and significantly impacts the cost of photovoltaic solar cells. This study focuses on the cutting process of photovoltaic monocrystalline silicon wafers, using a three-axis bending experiment to measure and analyze the fracture strength and corresponding breakage rate of the silicon wafers. A three-dimensional simulation analysis model for the fracture strength of the silicon slicing wafers was established by finite element method. The research results show that the fracture strength of the silicon slicing wafers has a large dispersion, the average fracture strength is 97.7 MPa. The bending stiffness of the silicon slicing wafers decreases as the thickness decreases, with an average bending stiffness of 441.2 N/m. When the thickness is 60 μm, the bending stiffness is the lowest at 103.5 N/m. The range of wafer breakage rate increases with the decrease of thickness, and the range of wafer breakage rate of 60 μm thickness is the largest, ranging from 0.6% to 99.9%. Simulation and experimental results are basically consistent, indicating that the simulation model and method are suitable for the simulation and analysis of the fracture strength and breakage rate of photovoltaic monocrystalline silicon slices.

Key words: photovoltaic monocrystalline silicon, slicing process, fracture strength, finite element analysis, thickness, breakage rate

中图分类号:

O786
TG58

谭慧莹, 邢旭, 葛培琪, 毕文波. 光伏单晶硅切割片断裂强度的仿真分析与实验研究[J]. 人工晶体学报, 2024, 53(8): 1369-1377.

TAN Huiying, XING Xu, GE Peiqi, BI Wenbo. Simulation Analysis and Experimental Research on the Fracture Strength of Photovoltaic Monocrystalline Silicon Slicing Wafers[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(8): 1369-1377.

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