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人工晶体学报 ›› 2001, Vol. 30 ›› Issue (2): 211-215.

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助熔剂法生长的PLZST单晶的缺陷研究

严清峰;宋锋兵;张一玲;李强   

  1. 武汉理工大学
  • 出版日期:2001-02-15 发布日期:2021-01-20
  • 基金资助:
    国家自然科学基金(59972025)

Research on the Defects of PLZST Single Crystal Grown by Flux Method

YAN Qing-feng;SONG Feng-bing;ZHANG Yi-ling;LI Qiang   

  • Online:2001-02-15 Published:2021-01-20

摘要: 本文介绍了助熔剂缓慢降温自发成核法生长的稀土掺杂锆钛锡酸铅镧(PLZST)晶体中出现的几种缺陷:包裹体、开裂、位错、枝晶,分析了这些缺陷的形成机理并提出了减少和消除这些缺陷的一些措施。

关键词: PLZST单晶;晶体生长;助熔剂法;缺陷

Abstract: The defects such as inclusion,splitting,dislocation and dendrite in the PbxLa1-x(Zry Tiz Sn1-y-z)O3(PLZST) single crystal grown from PbO-PbF2 flux by the slow cooling self-seeding technique were discussed in this paper.The forming mechanism of these defects were analyzed and some measures to eliminate the defects were proposed.

Key words: The defects such as inclusion,splitting,dislocation and dendrite in the PbxLa1-x(Zry Tiz Sn1-y-z)O3(PLZST) single crystal grown from PbO-PbF2 flux by the slow cooling self-seeding technique were discussed in this paper.The forming mechanism of these defects were analyzed and some measures to eliminate the defects were proposed.

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