欢迎访问《人工晶体学报》官方网站,今天是 分享到:

人工晶体学报 ›› 2007, Vol. 36 ›› Issue (2): 348-352.

• • 上一篇    下一篇

耐高温、抗冲刷Si-B-O-N系陶瓷透波材料的研究

张伟儒;王重海;李伶;刘建;陈文   

  1. 武汉理工大学材料学院,武汉,430070;山东工业陶瓷研究设计院,淄博,255031;山东工业陶瓷研究设计院,淄博,255031;武汉理工大学材料学院,武汉,430070
  • 出版日期:2007-04-15 发布日期:2021-01-20

Study on High Temperature Resistance and Scour Resistance of Si-B-O-N Based Ceramic Transparent Materials

ZHANG Wei-ru;WANG Chong-hai;LI Ling;LIU Jian;CHEN Wen   

  • Online:2007-04-15 Published:2021-01-20

摘要: 本研究选择Si3N4-BN-SiO2体系,通过气氛压力烧结工艺(Gas Pressure Sintering,GPS)研制了耐高温、抗冲刷Si-B-O-N系陶瓷透波材料.系统研究了BN和纳米SiO2含量对复合材料力学和介电性能的影响,分析了该材料的显微结构特点及增强机理.实验结果表明:通过控制材料组分和工艺参数的变化,制备的Si-B-O-N系陶瓷透波材料性能良好,弯曲强度:74.7~174.83 MPa;介电常数:3.5~4.2;介电损耗:0.5~4.5×10-3,可满足高性能导弹用陶瓷天线罩对透波材料的要求.

关键词: 透波材料;Si-B-O-N系陶瓷;介电常数

Abstract: High properties transparent Si3N4-BN-SiO2 ceramic composites with Si-B-O-N based were prepared by gas pressure sintering(GPS). The effects of BN and nano-SiO2 contents on the mechanic and dielectric properties of the composites were described. The microstructure characteristic and reinforced mechanism of the composites were investigated. The results show that it can be obtained a series of Si-B-O-N ceramic transparent materials by controlling the content of raw materials and technological parameter. The bending strength of composites is from 74.7MPa to 174.83MPa and the dielectric constant is from 3.5 to 4.2 and the dielectric dissipation is 0.5-4.5 × 10-3.

Key words: High properties transparent Si3N4-BN-SiO2 ceramic composites with Si-B-O-N based were prepared by gas pressure sintering(GPS). The effects of BN and nano-SiO2 contents on the mechanic and dielectric properties of the composites were described. The microstructure characteristic and reinforced mechanism of the composites were investigated. The results show that it can be obtained a series of Si-B-O-N ceramic transparent materials by controlling the content of raw materials and technological parameter. The bending strength of composites is from 74.7MPa to 174.83MPa and the dielectric constant is from 3.5 to 4.2 and the dielectric dissipation is 0.5-4.5 × 10-3.

中图分类号: