关键词: Ba_(0.998)La_(0.002)TiO_3;Bi_4Ti_3O_(12);显微结构;居里温度

Abstract: (1-x)Ba_(0.998)La_(0.002)TiO_3 + xBi_4Ti_3O_(12) (0≤x≤0.01) system ceramics were prepared by solid-state reaction technology. The samples were sintered in reducing atmosphere (nitrogen) and then reoxidized. The microstructure of samples were characterized by SEM, electrical properties were analyzed by the resistivity-temperature testing apparatus and capacitance testing selector. The results showed that the grain size of BaTiO_3 ceramics significantly decreased after doping Bi_4Ti_3O_(12); Curie temperature of ceramics increased (T_c= 150 ℃). As the addition of the amount of BIT increasing, the electron and vacancies compensated each other, extra electrons were compensated with lattice metal ions vacancy, thus resistivity gradually increased.

Key words: (1-x)Ba_(0.998)La_(0.002)TiO_3 + xBi_4Ti_3O_(12) (0≤x≤0.01) system ceramics were prepared by solid-state reaction technology. The samples were sintered in reducing atmosphere (nitrogen) and then reoxidized. The microstructure of samples were characterized by SEM, electrical properties were analyzed by the resistivity-temperature testing apparatus and capacitance testing selector. The results showed that the grain size of BaTiO_3 ceramics significantly decreased after doping Bi_4Ti_3O_(12); Curie temperature of ceramics increased (T_c= 150 ℃). As the addition of the amount of BIT increasing, the electron and vacancies compensated each other, extra electrons were compensated with lattice metal ions vacancy, thus resistivity gradually increased.