关键词: InAs/Si(211)薄膜;热壁外延;生长温度;电学性能

Abstract: High preferred orientation InAs films were prepared on the surface of single crystalline Si (211) substrates by Hot Wall Epitaxy ( HWE) deposition.The effects of growth temperatures (300 ℃, 350 ℃, 400℃, 450℃, and 500℃) on the structure and electrical properties of the films were studied in details.The phase structure , surface morphology , electrical and optical properties of the films were characterized by X-ray diffraction ( XRD ) , scanning electron microscopy ( SEM ) , atomic force microscopy ( AFM ) and hall measurements ( Hall ) . The results indicate that the InAs films are successfully deposited on the surface of Si (211) substrates by HWE technique .All the films were shown preferentially grown along the ( 111 ) direction with zinc blende structure .With the growth temperature increasing from 300℃ to 500℃, and the full width at half maximum (FWHM) of (111) peak decreases initially and then increases accordingly .The grain size , carrier concentration and Hall mobility of the InAs thin film reaches 73.4 nm, 1022 cm -3 and 102 cm2/(V· s) at 400℃ respectively, which suggests that the optimal growth temperature increases the carrier density significantly by degrading defect recombination .The crystal quality and electrical performance of the films were improved accordingly .The results of SEM and AFM show that the growth of InAs on Si ( 211 ) substrate were mainly three dimensional ( S-K ) growth mode , due to the high lattice mismatch and the special orientation of Si substrate tilted ( 211 ) plane.The surface roughness ( Ra ) decreases first and then increases with increasing of the growth temperatures .The Ra of the film at 400 ℃reaches 48.37 nm.

Key words: High preferred orientation InAs films were prepared on the surface of single crystalline Si (211) substrates by Hot Wall Epitaxy ( HWE) deposition.The effects of growth temperatures (300 ℃, 350 ℃, 400℃, 450℃, and 500℃) on the structure and electrical properties of the films were studied in details.The phase structure , surface morphology , electrical and optical properties of the films were characterized by X-ray diffraction ( XRD ) , scanning electron microscopy ( SEM ) , atomic force microscopy ( AFM ) and hall measurements ( Hall ) . The results indicate that the InAs films are successfully deposited on the surface of Si (211) substrates by HWE technique .All the films were shown preferentially grown along the ( 111 ) direction with zinc blende structure .With the growth temperature increasing from 300℃ to 500℃, and the full width at half maximum (FWHM) of (111) peak decreases initially and then increases accordingly .The grain size , carrier concentration and Hall mobility of the InAs thin film reaches 73.4 nm, 1022 cm -3 and 102 cm2/(V· s) at 400℃ respectively, which suggests that the optimal growth temperature increases the carrier density significantly by degrading defect recombination .The crystal quality and electrical performance of the films were improved accordingly .The results of SEM and AFM show that the growth of InAs on Si ( 211 ) substrate were mainly three dimensional ( S-K ) growth mode , due to the high lattice mismatch and the special orientation of Si substrate tilted ( 211 ) plane.The surface roughness ( Ra ) decreases first and then increases with increasing of the growth temperatures .The Ra of the film at 400 ℃reaches 48.37 nm.