关键词: 氧化锆陶瓷;酸碱性;雾化施液;超光滑表面;材料去除率

Abstract: The process of fine atomizing slurry CMP was adopted to polish the zirconia ceramics .The representative acid-base regular in slurry , which has an influence on the MRR, surface morphology and surface roughness for polished zirconia ceramic as well as the effect of acid-base on the stability of fine atomization slurry were studied .The results show that the silica polishing slurry prepared for the fine atomization process has better dispersion stability in the alkaline environment .Although the acid polishing slurry has higher MRR, the acid corrosion of the zirconia ceramic is too large to polish zirconia ceramic;The surface quality polished with organic alkali as a regulator after polishing is significantly better than inorganic and inorganic acids , organic acids;the alkaline polishing slurry used of ethylenediamine after fine atomization was adopted to polish zirconia ceramic , which shows a high quality ultra-smooth , low damage surface and high processing efficiency , surface roughness Rq of 1.67 nm, MRR of 182.23 nm/min.

Key words: The process of fine atomizing slurry CMP was adopted to polish the zirconia ceramics .The representative acid-base regular in slurry , which has an influence on the MRR, surface morphology and surface roughness for polished zirconia ceramic as well as the effect of acid-base on the stability of fine atomization slurry were studied .The results show that the silica polishing slurry prepared for the fine atomization process has better dispersion stability in the alkaline environment .Although the acid polishing slurry has higher MRR, the acid corrosion of the zirconia ceramic is too large to polish zirconia ceramic;The surface quality polished with organic alkali as a regulator after polishing is significantly better than inorganic and inorganic acids , organic acids;the alkaline polishing slurry used of ethylenediamine after fine atomization was adopted to polish zirconia ceramic , which shows a high quality ultra-smooth , low damage surface and high processing efficiency , surface roughness Rq of 1.67 nm, MRR of 182.23 nm/min.