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人工晶体学报 ›› 2021, Vol. 50 ›› Issue (1): 94-101.

• 研究论文 • 上一篇    下一篇

Ni、Mo共掺杂对SnO2材料性能影响的仿真研究

常永强1, 王景芹1, 朱艳彩1, 张广智2, 胡德霖3   

  1. 1.河北工业大学,省部共建电工装备与智能化国家重点实验室,天津 300130;
    2.上海良信电器股份有限公司,上海 200137;
    3.苏州电器科学研究院有限公司,苏州 215000
  • 收稿日期:2020-10-20 出版日期:2021-01-15 发布日期:2021-03-01
  • 通讯作者: 王景芹,博士,教授。E-mail:jqwang@hebut.com
  • 作者简介:常永强(1996—),男,河北省人,硕士研究生。E-mail:1448008088@qq.com
  • 基金资助:
    国家自然科学基金(51777057)

Simulation Analysis of the Effect of Ni and Mo Co-Doping on the Properties of SnO2

CHANG Yongqiang1, WANG Jingqin1, ZHU Yancai1, ZHANG Guangzhi2, HU Delin3   

  1. 1. State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300130, China;
    2. Shanghai Liangxin Electrical Co., Ltd., Shanghai 200137, China;
    3. Suzhou Electrical Research Institute Co., Ltd., Suzhou 215000, China
  • Received:2020-10-20 Online:2021-01-15 Published:2021-03-01

摘要: 针对AgSnO2触头材料存在的不足,采用基于密度泛函理论的第一性原理对SnO2、Ni单掺杂、Mo单掺杂以及Ni-Mo共掺杂SnO2材料进行了电性能与力学性质的研究,计算了各体系的形成能、能带结构、态密度、弹性常数等各项参数。结果表明,掺杂后的材料可以稳定存在,且仍为直接带隙半导体材料。与未掺杂相比,掺杂后体系的能带结构带隙值减少,其中Ni-Mo共掺杂时的带隙值最小,载流子跃迁所需能量减少,极大地改善了SnO2的电性能;由弹性常数计算了剪切模量、体积模量、硬度等参数,其中Ni-Mo共掺杂时的硬度大幅降低,韧性增强,有利于AgSnO2触头材料后续加工成型,且其普适弹性各向异性指数最小,不易形成裂纹。综合各项因素,Ni-Mo共掺杂能够很好地改善SnO2的性能,为触头材料的发展提供了理论指导。

关键词: 第一性原理, SnO2, Ni-Mo共掺杂, 稳定性, 电性能, 力学性能

Abstract: For the deficiencies of AgSnO2 contact material, the first-principle based on the density functional theory was used to study the electrical and mechanical properties of pure SnO2, Ni doped SnO2, Mo doped SnO2 and Ni-Mo co-doped SnO2. The parameters of every model, including the formation energy, energy band structure, density of state, elastic constant were obtained by the CASTEP module of Materials Studio software. According to the formation energy, the doped models can exist stably. After doped, every model′s valence band top and conduction band bottom are at the same point so the doped models are still the direct bandgap semiconductor materials. The Ni-doped SnO2 is P-type doped semiconductor material, and the Mo-doped is the N-type as well as Ni-Mo co-doped SnO2. With the introduction of the new impurity levels, the band gap is narrowed. Compared with the band structure of pure SnO2, the doped models have a rising valence band and a declining conduction band so they have a smaller band gap, and the Ni-Mo co-doped SnO2 has the smallest band gap. With the reduced energy for carrier transition, the electrical performance of SnO2 is improved largely. What′s more, the shear modulus, volume modulus and hardness are obtained by the elastic constants. The hardness of Ni-Mo co-doped SnO2 decreases significantly and its toughness is enhanced, which is conductive to the subsequent processing and forming of AgSnO2 contact material. The Ni-Mo co-doped SnO2 has the smallest universal elastic anisotropy index so the contact materials are not easy to form cracks. According to the calculation results, it turns out that the co-doping of Ni-Mo can improve the electrical and mechanical properties of SnO2 better than single element doping, which provides theoretical guidance for the further development and research of contact materials.

Key words: first-principle, SnO2, Ni-Mo co-doped, stability, electrical property, mechanical property

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