一步CVD法制备WS2-MoS2垂直异质结及其表征

人工晶体学报 ›› 2021, Vol. 50 ›› Issue (3): 491-496.

一步CVD法制备WS₂-MoS₂垂直异质结及其表征

钱叶铮, 丁凯旋, 余佳俊, 肖少庆

江南大学物联网工程学院电子工程系,无锡 214122

收稿日期:2020-12-22 出版日期:2021-03-15 发布日期:2021-04-15
通讯作者: 肖少庆,教授。E-mail:xiaosq@jiangnan.edu.cn
作者简介:钱叶铮(1995—),男,江苏省人,硕士研究生。E-mail:arlows@163.com
基金资助:
国家自然科学基金(11704159)

Preparation and Characterization of WS₂-MoS₂ Vertical Heterostructure by One-Step CVD

QIAN Yezheng, DING Kaixuan, YU Jiajun, XIAO Shaoqing

Department of Electronic Engineering, School of Internet of Things Engineering, Jiangnan University, Wuxi 214122, China

Received:2020-12-22 Online:2021-03-15 Published:2021-04-15

摘要/Abstract

摘要： 本文主要研究了WS₂-MoS₂垂直异质结的制备及其光电性能。以氧化钼(MoO₃)、氧化钨(WO₃)、硫粉(S)作为反应物,采用改良的一步化学气相沉积法(CVD)实现高质量的WS₂-MoS₂垂直异质结的制备。使用拉曼光谱仪(Raman)、光致发光光谱仪(PL)、光学显微镜(OM)、原子力显微镜(AFM)、透射电子显微镜(TEM)、X射线光电子能谱仪(XPS)等设备,对异质结的形貌、元素组成等进行了表征。最后制备了基于WS₂-MoS₂异质结的光电探测器,测量了包括输出特性曲线、转移特性曲线、光电流曲线等光电特性。经测试,WS₂-MoS₂异质结光电探测器在532 nm激光模式下展现了良好的光响应特性,使其能应用于高效率的光电子器件的制备,在微电子学领域具有广阔的应用前景。

关键词: WS₂-MoS₂垂直异质结, 化学气相沉积, 二维材料, 光电探测器, 范德瓦尔斯力, 限域空间

Abstract: The preparation and optoelectronic properties of WS₂-MoS₂ vertical heterostructure were mainly studied. Molybdenum oxide (MoO₃), tungsten oxide (WO₃) and sulfur powder (S) were employed as reactants, and then high quality WS₂-MoS₂ vertical heterostructures were prepared by using an improved one-step chemical vapor deposition method (CVD). Raman spectroscopy (Raman), photoluminescence spectroscopy (PL), optical microscope (OM), atomic force microscope (AFM), transmission electron microscope (TEM), X-ray photoelectron spectroscopy (XPS) and other related devices were used to characterize the morphology and element composition of the heterostructures. At last, the photodetector based on WS₂-MoS₂ vertical heterostructure was produced, and the photoelectric characteristics of the fabricated device including the output characteristic curve, transfer characteristic curve and photocurrent curve were measured. The test results show that the photodetector based on WS₂-MoS₂ vertical heterostructure exhibits wonderful photoresponse characteristics under the 532 nm laser mode. It obviously means that the photodetector based on WS₂-MoS₂ vertical heterostructure can be applied to the preparation of high-efficiency optoelectronic devices and have broad application prospects in the field of microelectronics.

Key words: WS₂-MoS₂ vertical heterostructure, chemical vapor deposition, 2D material, photodetector, Van der Waals force, confined space

中图分类号:

TB383
TN36

钱叶铮, 丁凯旋, 余佳俊, 肖少庆. 一步CVD法制备WS₂-MoS₂垂直异质结及其表征[J]. 人工晶体学报, 2021, 50(3): 491-496.

QIAN Yezheng, DING Kaixuan, YU Jiajun, XIAO Shaoqing. Preparation and Characterization of WS₂-MoS₂ Vertical Heterostructure by One-Step CVD[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(3): 491-496.

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一步CVD法制备WS₂-MoS₂垂直异质结及其表征

Preparation and Characterization of WS₂-MoS₂ Vertical Heterostructure by One-Step CVD

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