InGaN/GaN微米阵列结构的生长及发光性能研究

人工晶体学报 ›› 2021, Vol. 50 ›› Issue (4): 776-782.

• 研究论文 • 上一篇

InGaN/GaN微米阵列结构的生长及发光性能研究

张利繁¹, 贾伟¹, 董海亮¹, 李天保², 贾志刚¹, 许并社^1,3

1.太原理工大学,新材料界面科学与工程教育部重点实验室,太原 030024;
2.太原理工大学材料科学与工程学院,太原 030024;
3.陕西科技大学,材料原子和分子科学研究所,西安 710021

收稿日期:2021-01-28 出版日期:2021-04-15 发布日期:2021-05-21
通讯作者: 贾伟,博士,高级实验师。E-mail:jiawei@tyut.edu.cn
作者简介:张利繁(1995—),男,山西省人,硕士研究生。E-mail:1369905694@qq.com
基金资助:
国家自然科学基金(61904120,21972103);山西省重点研发计划(201903D111009)

Growth and Luminescence Properties of InGaN/GaN Micro-Array

ZHANG Lifan¹, JIA Wei¹, DONG Hailiang¹, LI Tianbao², JIA Zhigang¹, XU Bingshe^1,3

1. Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China;
2. College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China;
3. Institute of Atomic and Molecular Sciences, Shaanxi University of Science and Technology, Xi’an 710021, China

Received:2021-01-28 Online:2021-04-15 Published:2021-05-21

摘要/Abstract

摘要： 采用金属有机化学气相外延技术,在图形化蓝宝石衬底上通过选区外延可控生长了三种不同形貌的InGaN/GaN微米阵列结构,阵列尺寸均为6 μm。其中,六方片状阵列结构以(0001)c面为主,高度为0.6 μm;六棱台状阵列结构包括一个(0001)c面和六个等效的(10-11)半极性面,高度为1.2 μm;六棱锥状阵列结构以(10-11)半极性面为主,高度为5 μm。采用微区光致发光光谱仪对InGaN/GaN微米阵列结构进行发光性能表征,结果表明不同形貌的InGaN/GaN微米阵列结构都可实现多波长发射;阴极荧光光谱结果表明六棱台状InGaN/GaN阵列结构不同晶面位置处发射的波长明显不同,这主要是由于表面迁移效应和横向气相扩散导致各个位置的In组分不同。InGaN/GaN微米阵列结构的成功制备对实现多彩发射和新型光电子器件设计具有重要意义。

关键词: InGaN/GaN, 微米阵列, 形貌调控, 发光性能, 多彩发射, MOCVD

Abstract: As the most promising optoelectronic device in the 21st century, the research of epitaxial structure of light-emitting diode has been a hot topic for scientists.Three types of InGaN/GaN micro-array with different morphologies were grown on graphical sapphire substrate by selective regional epitaxy using metal organic chemical vapor deposition technology. The size of the array is 6 μm. The tablets array is dominated by (0001)c facet, the height is 0.6 μm; the platelets array includes one (0001)c facet and six equivalent (10-11) semi-polar facets, the height is 1.2 μm; the pyramid-like array is dominated by (10-11) semi-polar facet and the height is 5 μm. The luminescence properties of InGaN/GaN micro-array structure were characterized by micro-area photoluminescence spectrometer and the results show that InGaN/GaN micro-array with different morphologies could achieve multi-wavelength emission, but its luminescence properties are heavily dependent on the morphology. Cathodic fluorescence spectra results show that the InGaN/GaN platelets array’s wavelength covering red, green and blue was obviously different for different test positions, which is mainly attributed to surface migration effect and transverse gas phase diffusion resulting in nonuniform distribution of In content in each position. Moreover, the results of energy dispersive spectrometer analysis show that the In content on different facets are different, and the (0001)c facet content is more than that of (10-11) semi-polar facets. For the realization of multi-emission and new optoelectronic device design, the successful preparation InGaN/GaN micro-array is very significance.

Key words: InGaN/GaN, micro-array, morphological regulation, photoelectric property, multi-emission, MOCVD

中图分类号:

TB321
O471

张利繁, 贾伟, 董海亮, 李天保, 贾志刚, 许并社. InGaN/GaN微米阵列结构的生长及发光性能研究[J]. 人工晶体学报, 2021, 50(4): 776-782.

ZHANG Lifan, JIA Wei, DONG Hailiang, LI Tianbao, JIA Zhigang, XU Bingshe. Growth and Luminescence Properties of InGaN/GaN Micro-Array[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(4): 776-782.

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InGaN/GaN微米阵列结构的生长及发光性能研究

Growth and Luminescence Properties of InGaN/GaN Micro-Array

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