低温热处理温度对SiC衬底上CuAlO2薄膜特性的影响

人工晶体学报 ›› 2021, Vol. 50 ›› Issue (9): 1662-1667.

低温热处理温度对SiC衬底上CuAlO₂薄膜特性的影响

胡继超^1,2, 孟佳琦^1,2, 李丹^1,2, 贺小敏^1,2, 王曦^1,2, 许蓓^1,2, 蒲红斌^1,2

1.西安理工大学电子工程系,西安 710048;
2.西安市电力电子器件与高效电能变换重点实验室,西安 710048

收稿日期:2021-05-08 出版日期:2021-09-15 发布日期:2021-10-15
作者简介:胡继超(1985—),男,河北省人,博士,讲师。E-mail:jchu@xaut.edu.cn
基金资助:
国家自然科学基金(61904146);陕西省教育厅自然科学专项项目(19JK0571)

Influence of Low Heat Treatment Temperature on the Characteristics of CuAlO₂ Thin Films Prepared on SiC Substrate

HU Jichao^1,2, MENG Jiaqi^1,2, LI Dan^1,2, HE Xiaomin^1,2, WANG Xi^1,2, XU Bei^1,2, PU Hongbin^1,2

1. Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China;
2. Xi'an Key Laboratory of Power Electronic Devices and High Efficiency Power Conversion, Xi'an 710048, China

Received:2021-05-08 Online:2021-09-15 Published:2021-10-15

摘要/Abstract

摘要： 为了解决双极型碳化硅(SiC)功率器件中由于p型SiC在室温下难以完全电离所导致的p+n发射结注入效率低的问题,提出将p型CuAlO₂与n型SiC形成的异质结作为发射结以提高该结的注入效率。本文利用溶胶凝胶(sol-gel)方法,在4H-SiC衬底上制备了CuAlO₂薄膜,研究了低温热处理温度对CuAlO₂薄膜晶体结构、表面形貌、光学特性的影响。结果表明:较高的热处理温度可以促进中间产物CuO的生成,进而在固相反应阶段促进CuAlO₂相的产生,最终制备的CuAlO₂薄膜主要以CuAlO₂相的(012)晶向择优取向。随着低温热处理温度的升高,薄膜的表面均匀致密,空位缺陷含量降低,结晶质量提高。当低温热处理温度为300 ℃时,CuAlO₂薄膜晶粒尺寸约为35 nm。此外,CuAlO₂薄膜在可见光范围内的透过率超过70%,且随着预处理温度升高,薄膜光学带隙略有增加。

关键词: SiC, 溶胶凝胶法, CuAlO₂薄膜, 低温热处理, 光学带隙

Abstract: In order to solve the problem of low injection efficiency of p+n emitter junction caused by incomplete ionization of p-type SiC in bipolar SiC power devices at room temperature, our group proposed to use the heterojunction formed by wide bandgap p-type CuAlO₂ and n-type SiC as the emitter junction. In this work, CuAlO₂ thin films were prepared on 4H-SiC (0001) by sol-gel method. The influence of low heat treatment temperature range on the crystal structure, surface morphology and optical properties of CuAlO₂ thin films were studied. The results show that the formation of intermediate product CuO can be enhanced at higher heat treatment temperature, promoting the generation of CuAlO₂ phase in the solid phase reaction stage. The prepared CuAlO₂ thin films are mainly oriented with the (012) crystal orientation of CuAlO₂ phase with high crystal quality. In addition, the higher heat treatment in low temperature range is beneficial to obtain high quality CuAlO₂ thin films with uniform surface and lower concentration of Cu-vacancy defect. The surfaces of the films are uniform with an average crystal grain size of approximately 35 nm when the heat treatment temperature in low temperature range is 300 ℃. The CuAlO₂ thin films are highly transparent, with optical transmission exceeding 70% across the whole visible range. Meanwhile, the optical band gaps of the CuAlO₂ thin films increases slightly with the increase of heat treatment temperatures in low temperature range.

Key words: SiC, sol-gel method, CuAlO₂ thin film, heat treatment at low temperature, optical band gap

中图分类号:

TB383

胡继超, 孟佳琦, 李丹, 贺小敏, 王曦, 许蓓, 蒲红斌. 低温热处理温度对SiC衬底上CuAlO₂薄膜特性的影响[J]. 人工晶体学报, 2021, 50(9): 1662-1667.

HU Jichao, MENG Jiaqi, LI Dan, HE Xiaomin, WANG Xi, XU Bei, PU Hongbin. Influence of Low Heat Treatment Temperature on the Characteristics of CuAlO₂ Thin Films Prepared on SiC Substrate[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(9): 1662-1667.

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低温热处理温度对SiC衬底上CuAlO₂薄膜特性的影响

Influence of Low Heat Treatment Temperature on the Characteristics of CuAlO₂ Thin Films Prepared on SiC Substrate

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