氮掺杂对氢终端金刚石射频器件特性的影响

人工晶体学报 ›› 2021, Vol. 50 ›› Issue (11): 2045-2052.

氮掺杂对氢终端金刚石射频器件特性的影响

刘晓晨^1,2, 郁鑫鑫^3,4, 葛新岗^1,2, 姜龙^1,2, 李义锋^1,2, 安晓明^1,2, 郭辉^1,2

1.河北省激光研究所,石家庄 050081;
2.河北普莱斯曼金刚石科技有限公司,石家庄 050081;
3.南京电子器件研究所,微波毫米波单片和模块电路重点实验室,南京 210016;
4.南京大学电子科学与工程学院,南京 210093

出版日期:2021-11-15 发布日期:2021-12-13
通讯作者: 郁鑫鑫,高级工程师。E-mail:yuxx711@126.com; 郭辉,副研究员。E-mail:hguo@hediamond.cn
作者简介:刘晓晨(1987—),男,河北省人,助理研究员。E-mail:liuxiaochen@hediamond.cn
基金资助:
河北省科技计划(18121015C);河北省自然科学基金(E2019302005)

Effect of Nitrogen Doping on the Perfomances of the Hydrogen Terminated Diamond RF Transistors

LIU Xiaochen^1,2, YU Xinxin^3,4, GE Xingang^1,2, JIANG Long^1,2, LI Yifeng^1,2, AN Xiaoming^1,2, GUO Hui^1,2

1. Hebei Institute of Laser, Shijiazhuang 050081, China;
2. Hebei Plasma Diamond Technology Co., Ltd., Shijiazhuang 050081, China;
3. Nanjing Electronic Devices Institute, Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing 210016, China;
4. School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

Online:2021-11-15 Published:2021-12-13

摘要/Abstract

摘要： 采用微波等离子体化学气相沉积(MPCVD)技术,通过改变气源中的氮含量,得到不同结晶质量的单晶金刚石,通过激光切割以及抛光控制样品尺寸为5 mm×5 mm×0.5 mm,然后对样品进行表面氢化处理并研制了金刚石射频器件,系统研究了氮含量对金刚石材料晶体质量和金刚石射频器件性能的影响。随着氮含量的增加,虽然单晶金刚石生长速率有所增加,但是其拉曼半峰全宽(FWHM)、XRD摇摆曲线半峰全宽也逐渐增加,光致发光光谱中对应的NV缺陷逐渐增多,晶体结晶质量逐渐变差,不仅导致沟道载流子的迁移率出现退化,而且也使金刚石射频器件出现了严重的电流崩塌和性能退化问题。通过降低氮浓度,提升材料的结晶质量,沟道载流子迁移率得到显著提升,金刚石射频器件的电流崩塌得到有效抑制,电流增益截止频率f_T和功率增益截止频率f_max分别从17 GHz和22 GHz大幅度提升至32 GHz和53 GHz。

关键词: 氮含量, 微波等离子体化学气相沉积, 晶体质量, 氢终端金刚石, 沟道载流子迁移率, 电流崩塌, 金刚石射频器件, 频率特性

Abstract: The microwave plasma chemical vapor deposition technology was employed to grow the single crystal diamond substrates with different crystalline qualities by changing the nitrogen content in the gas source. The sample size was controlled at 5 mm×5 mm×0.5 mm by laser cutting and polishing. The surfaces of diamond substrates were hydrogenated and the diamond RF transistors were fabricated on them. The influence of the nitrogen content on the crystalline quality of the diamond and the performance of the device has been systematically studied. With the increase of the nitrogen content, although the growth rate of the single crystal diamond increases, the FWHM of Raman and XRD rocking curves, as well as the corresponding NV defects in the photoluminescence spectra also gradually increases, indicating that the crystalline quality became worse, which not only degrade the carrier mobility of the channels, but also make the diamond RF transistor suffer from the problems of current collapse and performance degradations. By reducing the nitrogen content and improving the crystalline quality of the diamond, the carrier mobility significantly increases, the current gain cutoff frequency f_T and power gain cutoff frequency f_max significantly increases from 17 GHz and 22 GHz to 32 GHz and 53 GHz, respectively.

Key words: nitrogen content, MPCVD, crystalline quality, hydrogen-terminal diamond, channel carrier mobility, current collapse, diandimond RF transistor, frequency performance

中图分类号:

TN304
TQ163

刘晓晨, 郁鑫鑫, 葛新岗, 姜龙, 李义锋, 安晓明, 郭辉. 氮掺杂对氢终端金刚石射频器件特性的影响[J]. 人工晶体学报, 2021, 50(11): 2045-2052.

LIU Xiaochen, YU Xinxin, GE Xingang, JIANG Long, LI Yifeng, AN Xiaoming, GUO Hui. Effect of Nitrogen Doping on the Perfomances of the Hydrogen Terminated Diamond RF Transistors[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(11): 2045-2052.

参考文献

[1] BALMER R S, BRANDON J R, CLEWES S L, et al. Chemical vapour deposition synthetic diamond: materials, technology and applications[J]. Journal of Physics: Condensed Matter, 2009, 21(36): 364221.
[2] 孔月婵,杨扬,周建军,等.碳基射频电子器件研究进展[J].固体电子学研究与进展,2020,40(2):94-103+121.
KONG Y C, YANG Y, ZHOU J J, et al. Recent progress on carbon-based RF devices[J]. Research & Progress of SSE, 2020, 40(2): 94-103+121(in Chinese).
[3] SONG J, LI H D, LIN F, et al. Plasmon-enhanced photoluminescence of Si-V centers in diamond from a nanoassembled metal-diamond hybrid structure[J]. CrystEngComm, 2014, 16(36): 8356.
[4] SHIBATA T, KITAMOTO Y, UNNO K, et al. Micromachining of diamond film for MEMS applications[J]. Journal of Microelectromechanical Systems, 2000, 9(1): 47-51.
[5] ALBIN S, WATKINS L. Electrical properties of hydrogenated diamond[J]. Applied Physics Letters, 1990, 56(15): 1454-1456.
[6] KAWARADA H. High-current metal oxide semiconductor field-effect transistors on H-terminated diamond surfaces and their high-frequency operation[J]. Japanese Journal of Applied Physics, 2012, 51: 090111.
[7] 杨名超.氢终端金刚石表面氧处理及金刚石场效应晶体管稳定性的研究[D].长春:吉林大学,2020.
YANG M C. Researches on oxygen treatment of hydrogen-termined diamond and stability of diamond field effect transistors[D]. Changchun: Jilin University, 2020(in Chinese).
[8] 王占国.半导体材料研究的新进展[J].半导体技术,2002,27(3):8-12+14.
WANG Z G. New progress of studies on semiconductor materials[J]. Semiconductor Technology, 2002, 27(3): 8-12+14(in Chinese).
[9] MAKI T, SHIKAMA S, KOMORI M, et al. Hydrogenating effect of single-crystal diamond surface[J]. Japanese Journal of Applied Physics, 1992, 31(Part 2, No. 10A): L1446-L1449.
[10] KAWARADA H, AOKI M, ITO M. Enhancement mode metal-semiconductor field effect transistors using homoepitaxial diamonds[J]. Applied Physics Letters, 1994, 65(12): 1563-1565.
[11] HIRAMA K, SATO H, HARADA Y, et al. Diamond field-effect transistors with 1.3 A/mm drain current density by Al₂O₃ passivation layer[J]. Japanese Journal of Applied Physics, 2012, 51: 090112.
[12] WANG C J, SHIH M H, CHEN L T. A wideband open-slot antenna with dual-band circular polarization[J]. IEEE Antennas and Wireless Propagation Letters, 2015, 14: 1306-1309.
[13] IMANISHI S, HORIKAWA K, OI N, et al. 3.8 W/mm RF power density for ALD Al₂O₃-based two-dimensional hole gas diamond MOSFET operating at saturation velocity[J]. IEEE Electron Device Letters, 2019, 40(2): 279-282.
[14] FENG Z H, WANG J J, HE Z Z, et al. Polycrystalline diamond MESFETs by Au-mask technology for RF applications[J]. Science China Technological Sciences, 2013, 56(4): 957-962.
[15] YU X X, ZHOU J J, QI C J, et al. A high frequency hydrogen-terminated diamond MISFET with f_T/f_max of 70/80 GHz[J]. IEEE Electron Device Letters, 2018, 39(9): 1373-1376.
[16] YU X X, ZHOU J J, ZHANG S, et al. High frequency H-diamond MISFET with output power density of 182 mW/mm at 10 GHz[J]. Applied Physics Letters, 2019, 115(19): 192102.
[17] YU X X, HU W X, ZHOU J J, et al. 1 W/mm output power density for H-terminated diamond MOSFETs with Al₂O₃/SiO₂ Bi-layer passivation at 2 GHz[J]. IEEE Journal of the Electron Devices Society, 2020, 9: 160-164.
[18] 杨鹏志.氢终端金刚石场效应管器件特性研究[D].西安:西安电子科技大学,2018.
YANG P Z. Research on the characteristics of H-terminated diamond field effect transistors[D]. Xi'an: Xidian University, 2018(in Chinese).
[19] 夏禹豪,耿传文,衡凡,等.MPCVD法中氮气对单晶金刚石生长机理影响的探究[J].真空科学与技术学报,2018,38(8):684-688.
XIA Y H, GENG C W, HENG F, et al. Impact of nitrogen concentration on monocrystalline diamond growth in microwave plasma chemical vapor deposition[J]. Chinese Journal of Vacuum Science and Technology, 2018, 38(8): 684-688(in Chinese).
[20] LU C H, LIU Q K, WANG Z T, et al. Preparation of CVD single crystal diamond and research of its infrared property[J]. Diamond and Abrasives Engineering, 2020, 40(06):20-24.
[21] HEI L F, LIU J, LI C M, et al. Fabrication and characterizations of large homoepitaxial single crystal diamond grown by DC arc plasma jet CVD[J]. Diamond and Related Materials, 2012, 30: 77-84.