碳酸钙掺杂对Ⅰb型金刚石沿不同晶面生长行为的影响

人工晶体学报 ›› 2021, Vol. 50 ›› Issue (11): 2053-2059.

碳酸钙掺杂对Ⅰb型金刚石沿不同晶面生长行为的影响

陈珈希¹, 张喜云², 李尚升¹, 郭明明¹, 胡美华¹, 宿太超¹, 黄国锋³, 李战厂³, 周振翔⁴, 聂媛¹, 王蒙召¹, 周绪彪¹

1.河南理工大学材料科学与工程学院,河南省深地材料科学与技术重点实验室,焦作 454003;
2.焦作大学人事处,焦作 454000;
3.赤峰学院,内蒙古自治区高压相功能材料重点实验室,赤峰 024000;
4.北京中材人工晶体研究院有限公司,北京 100018

出版日期:2021-11-15 发布日期:2021-12-13
通讯作者: 李尚升,博士,副教授。E-mail:lishsh@hpu.edu.cn
作者简介:陈珈希(1997—),女,河南省人,硕士研究生。E-mail:1282226045@qq.com
基金资助:
国家自然科学基金(52072113);内蒙古自治区高压相功能材料重点实验室开放课题(cfxygy202003);河南省自然科学基金(182300410279);河南省科技攻关项目(182102210311);河南理工大学博士基金(B2017-54)

Effect of CaCO₃ Doping on Growth Behavior of Type Ⅰb Diamond along Different Crystal Faces

CHEN Jiaxi¹, ZHANG Xiyun², LI Shangsheng¹, GUO Mingming¹, HU Meihua¹, SU Taichao¹, HUANG Guofeng³, LI Zhanchang³, ZHOU Zhenxiang⁴, NIE Yuan¹, WANG Mengzhao¹, ZHOU Xubiao¹

1. Henan Key Laboratory of Materials on Deep-Earth Engineering, School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454003, China;
2. Office of Human Resources, Jiaozuo University, Jiaozuo 454000, China;
3. Inner Mongolia Key Laboratory of High-Pressure Phase Functional Materials, Chifeng University, Chifeng 024000, China;
4. Beijing Sinoma Snythetic Crystals Co., Ltd., Beijing 100018, China

Online:2021-11-15 Published:2021-12-13

摘要/Abstract

摘要： 作为天然金刚石生长环境的碳酸盐,研究其掺杂对人造金刚石晶体生长行为的影响具有重要的学术价值。本文运用高温高压下的温度梯度法,将碳酸钙(CaCO₃)按照不同比例掺杂到金刚石合成腔体内的碳源中,用以研究其掺杂对金刚石分别沿(100)或(111)晶面生长行为的影响。利用光学显微成像对掺杂合成金刚石晶体形貌的表征表明:随着碳酸钙掺量的增加,沿(100)面生长的金刚石晶形由塔状变为板状且出现了裂晶、连晶现象,晶体颜色先变浅再变黑,内部出现了包裹体;同样,沿(111)面生长的金刚石晶形由板状逐渐变为塔状且出现了裂晶、孪晶现象,晶体颜色逐渐变黑,内部包裹体增多。用激光拉曼光谱对掺杂金刚石晶体质量的表征表明:随着碳酸钙掺量的增加,沿(100)或(111)面生长的掺杂金刚石的拉曼峰位偏移量均增大,半峰全宽均变大。这说明碳酸钙掺杂使得金刚石晶格畸变增加、内应力变大。本文对碳酸钙掺杂影响沿两不同面生长金刚石的晶形、颜色、内部质量等行为的成因进行了分析,为本课题后续研究奠定了基础。

关键词: Ⅰb型金刚石, 掺杂, 碳酸钙, 温度梯度法, 晶体生长, 高温高压, 晶格畸变

Abstract: It is of great academic value to study the influence of carbonate doping on the growth behavior of synthetic diamond crystals. In this paper, CaCO₃ was doped into the carbon source in the diamond synthesis cavity at different ratios using the temperature gradient method at high pressure and high temperature (HPHT). The purpose of the study is to investigate the effect of CaCO₃ doping on the growth behavior of diamond along the (100) or (111) crystal plane, respectively. The crystal morphology of doped synthetic diamonds was studied by optical microscopy. The results show that with the increase of the CaCO₃ content, the crystal shape of diamond growing along the (100) plane change from tower to plate accompanied by crack crystal or crystals stock. The color of the crystal becomes lighter and then darker, and the inclusions appear in diamond. Besides, the crystal shape of diamond growing along (111) surface gradually changes from plate to tower accompanied by crack and twin crystals phenomena. With the increase of the CaCO₃ content, the color of diamond crystals gradually becomes darker, and more inclusions appear in diamond. The Raman spectroscopy results show that with the increase of CaCO₃ content, the Raman peak position shifts of doped diamond growing along (100) or (111) plane increase, and the full width at half maximum (FWHM) becomes larger. This indicates that the doping of CaCO₃ increases crystal lattice distortion and internal stress of diamond. In this paper, the causes for the effect of CaCO₃ doping on the crystal shape, color, internal quality and other behaviors of the diamond growing along the two different faces were analyzed, which lays the foundation for the subsequent study of this topic.

Key words: type Ⅰb diamond, doping, CaCO₃, temperature gradient method, crystal growth, HPHT, lattice distortion

中图分类号:

TQ163

陈珈希, 张喜云, 李尚升, 郭明明, 胡美华, 宿太超, 黄国锋, 李战厂, 周振翔, 聂媛, 王蒙召, 周绪彪. 碳酸钙掺杂对Ⅰb型金刚石沿不同晶面生长行为的影响[J]. 人工晶体学报, 2021, 50(11): 2053-2059.

CHEN Jiaxi, ZHANG Xiyun, LI Shangsheng, GUO Mingming, HU Meihua, SU Taichao, HUANG Guofeng, LI Zhanchang, ZHOU Zhenxiang, NIE Yuan, WANG Mengzhao, ZHOU Xubiao. Effect of CaCO₃ Doping on Growth Behavior of Type Ⅰb Diamond along Different Crystal Faces[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(11): 2053-2059.

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