C面蓝宝石抛光液组分优化

人工晶体学报 ›› 2021, Vol. 50 ›› Issue (12): 2354-2361.

C面蓝宝石抛光液组分优化

计健¹, 梁志强², 周海¹, 蒋网¹, 任相璞¹

1.盐城工学院机械工程学院,盐城 224051;
2.北京理工大学机械与车辆学院,北京 100081

收稿日期:2021-08-26 出版日期:2021-12-15 发布日期:2022-01-06
通讯作者: 周海,教授。E-mail:zhouhai@ycit.cn
作者简介:计健(1998—),男,江苏省人,硕士研究生。E-mail:171012702@qq.com
基金资助:
国家自然科学基金(51675457);盐城工学院研究生创新项目(SJCX21_1521)

Composition Optimization of Polishing Slurry for C-Plane Sapphire

JI Jian¹, LIANG Zhiqiang², ZHOU Hai¹, JIANG Wang¹, REN Xiangpu¹

1. School of Mechanical Engineering, Yancheng Institute of Technology, Yancheng 224051, China;
2. School of Machinery and Vehicle, Beijing Institute of Technology, Beijing 100081, China

Received:2021-08-26 Online:2021-12-15 Published:2022-01-06

摘要/Abstract

摘要： 本文利用单因素及正交试验探究磨粒种类、抛光液pH值、表面活性剂种类、磨粒粒径对C面蓝宝石化学机械抛光材料去除率的影响,试验结果表明: 采用二氧化硅作为磨粒能得到较高的材料去除率及较好的表面形貌;材料去除率随抛光液pH值的增大呈现先增大再减小的趋势,其中pH值在9附近能得到较好的去除率;材料去除率还随着磨粒粒径的增大而增大;使用三乙醇胺(TEA)、十六烷基三甲基溴化铵(CTAB)作表面活性剂能得到较高的材料去除率;各试验因素对蓝宝石晶片材料去除率的主次顺序为磨粒粒径、表面活性剂、抛光液pH值;其中当磨粒粒径为50 nm,表面活性剂选CTAB,抛光液pH值为9既能得到较高的材料去除率又能获得较好的表面质量。

关键词: 抛光液, 单因素试验, 正交试验, 材料去除率, 化学机械抛光, 表面活性剂, 蓝宝石加工

Abstract: In this paper, single factor and orthogonal experiments were used to explore the influence of abrasive grain types, polishing slurry pH value, surfactant type, and abrasive grain size on the removal rate of C-plane sapphire chemical mechanical polishing materials. The test results show that: a higher material removal rate and a better surface morphology can obtained when using silica as abrasive particles; the material removal rate shows a trend of first increasing and then decreasing with the increase of the pH value of the polishing slurry, and the pH value of the 9 attachment can get a better removal rate; the material removal rate also increases with the increase of abrasive particle size; using triethanolamine (TEA) and cetyltrimethylammonium bromide (CTAB) as surfactants can get a higher material removal rate; the primary and secondary order of each test factor on the removal rate of sapphire wafer material is abrasive particle size, surfactant, polishing slurry pH value; when the abrasive particle size is 50 nm, the surfactant is CTAB, and the polishing slurry pH value is 9 can get higher material removal rate and better surface quality.

Key words: polishing slurry, single factor test, orthogonal test, material removal rate, chemical mechanical polishing(CMP), surfactant, sapphire processing

中图分类号:

O786

计健, 梁志强, 周海, 蒋网, 任相璞. C面蓝宝石抛光液组分优化[J]. 人工晶体学报, 2021, 50(12): 2354-2361.

JI Jian, LIANG Zhiqiang, ZHOU Hai, JIANG Wang, REN Xiangpu. Composition Optimization of Polishing Slurry for C-Plane Sapphire[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(12): 2354-2361.

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