单晶金刚石p型和n型掺杂的研究

人工晶体学报 ›› 2022, Vol. 51 ›› Issue (5): 841-851.

单晶金刚石p型和n型掺杂的研究

牛科研¹, 张璇², 崔博垚², 马永健², 唐文博², 魏志鹏¹, 张宝顺²

1.长春理工大学物理学院,高功率半导体激光国家重点实验室,长春 130022;
2.中国科学院苏州纳米技术与纳米仿生研究所纳米加工平台, 苏州 215123

收稿日期:2021-11-03 出版日期:2022-05-15 发布日期:2022-06-17
通讯作者: 魏志鹏,博士,教授。E-mail:zpweicust@126.com张宝顺,博士,研究员。E-mail:bszhang2006@sinano.ac.cn
作者简介:牛科研(1997—),女,吉林省人,硕士研究生。E-mail:1835266165@qq.com; 魏志鹏,于中国科学院长春光学精密机械与物理研究所凝聚态物理专业获得博士学位,现任长春理工大学高功率半导体激光国家级重点实验室副主任,吉林省半导体激光技术工程研究中心副主任。近年来承担国家自然科学基金、总装备重点基金、总装备部预研基金及省部级科研项目20余项,其中主持国家自然科学基金3项、总装备部预研基金4项,省部级项目11项,国家发明专利5项。主要从事半导体光电子器件研究。张宝顺,中国科学院苏州纳米技术与纳米仿生研究所纳米加工平台主任、研究员,博士生导师,中国科学院首批“引进杰出技术人才”,曾先后担任科技部“光电子与微电子器件与集成”重点研究计划专家组成员、国家科技进步奖评审专家,长期从事半导体材料生长和器件加工工艺研究。
基金资助:
国家自然科学基金青年科学基金(61804166)

p-Type and n-Type Doping of Single Crystal Diamond

NIU Keyan¹, ZHANG Xuan², CUI Boyao², MA Yongjian², TANG Wenbo², WEI Zhipeng¹, ZHANG Baoshun²

1. State Key Laboratory of High Power Semiconductor Laser, School of Physics, Changchun University of Science and Technology, Changchun 130022, China;
2. Nanofabrication Facility, Suzhou Institute of Nano-Technology and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

Received:2021-11-03 Online:2022-05-15 Published:2022-06-17

摘要/Abstract

摘要： 超宽禁带半导体材料金刚石在热导率、载流子迁移率和击穿场强等方面表现出优异的性质,在功率电子学领域具有广阔的应用前景。实现p型和n型导电是制备金刚石半导体器件的基础要求,其中p型金刚石的发展较为成熟,主流的掺杂元素是硼,但在高掺杂时存在空穴迁移率迅速下降的问题;n型金刚石目前主流的掺杂元素是磷,还存在杂质能级深、电离能较大的问题,以及掺杂之后金刚石晶体中的缺陷造成载流子浓度和迁移率都比较低,电阻率难以达到器件的要求。因此制备高质量的p型和n型金刚石成为研究者关注的焦点。本文主要介绍金刚石独特的物理性质,概述化学气相沉积法和离子注入法实现金刚石掺杂的基本原理和参数指标,进而回顾两种方法进行单晶金刚石薄膜p型和n型掺杂的研究进展,系统总结了其面临的问题并对未来方向进行了展望。

关键词: 金刚石, 离子注入, 化学气相沉积, 超宽禁带半导体, 掺杂, n型, p型

Abstract: Diamond as an ultra-wide band gap semiconductor material shows excellent properties in thermal conductivity, carrier mobility and breakdown field strength, and has broad application prospects in the field of power electronics. The realization of p-type and n-type conduction is essential to fabricate diamond electronic devices. Between them, the development of p-type diamond is relatively mature, and boron is the mainstream doping element. However, the hole mobility decreases rapidly at a high doping concentration. The main doping element of n-type diamond is phosphorus. At present, there are still challenges such as deep impurity level, large ionization energy, and defects in diamond crystals after doping, resulting in low carrier concentration and mobility, and the resistivity is difficult to meet the requirements of devices. Therefore, the realization of high quality p-type and n-type diamond has become the focus of researchers. This paper mainly introduces the unique physical properties of single crystal diamond, outlines the basic principles and key parameters of the chemical vapor deposition method and ion implantation method of doping, then reviews the research progress on the p-type and n-type doping of single crystal diamond films by the two methods, systematically summarizes the facing problems and the prospects of future development.

Key words: diamond, ion implantation, chemical vapor deposition, ultra-wide band gap semiconductor, doping, n-type, p-type

中图分类号:

TN304

牛科研, 张璇, 崔博垚, 马永健, 唐文博, 魏志鹏, 张宝顺. 单晶金刚石p型和n型掺杂的研究[J]. 人工晶体学报, 2022, 51(5): 841-851.

NIU Keyan, ZHANG Xuan, CUI Boyao, MA Yongjian, TANG Wenbo, WEI Zhipeng, ZHANG Baoshun. p-Type and n-Type Doping of Single Crystal Diamond[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(5): 841-851.

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