射频磁控溅射氧气流量对制备的Ga2O3∶Cr薄膜光致发光性能的影响

摘要/Abstract

摘要： 在不同氧气流量下,采用双靶射频磁控共溅射的方法在蓝宝石(α-Al₂O₃)基底上制备得到系列掺Cr的Ga₂O₃(Ga₂O₃∶Cr)薄膜,详细研究了薄膜在900 ℃退火前后的结构和光学性能。结果表明,未退火的Ga₂O₃∶Cr薄膜为非晶结构,其发光主要位于蓝绿波段。经900 ℃退火后,薄膜的结构由非晶变为多晶,且在近红外波段观测到了来源于Cr³⁺掺杂的发光。退火后的薄膜结晶质量和近红外发光均与氧气流量密切相关,而其光学带隙不受氧气流量的影响。在所研究的氧气流量范围,4 mL/min氧气流量下薄膜的近红外发光强度最强,这与此条件下薄膜结晶质量较好以及Cr³⁺替代Ga³⁺的数量较多有关。以上研究成果可为制备高质量Ga₂O₃∶Cr薄膜提供参考。

关键词: Ga₂O₃∶Cr薄膜, 射频磁控溅射, 蓝宝石基底, 氧气流量, 退火, 光学性能, 结晶质量

Abstract: Cr-doped Ga₂O₃(Ga₂O₃∶Cr) thin films were deposited on sapphire (α-Al₂O₃) substrates by dual-target RF magnetron co-sputtering at different oxygen flow rates. Structures and optical properties of the deposited Ga₂O₃∶Cr thin films were investigated in detail before and after annealing at 900 ℃. The results clearly reveal that the deposited Ga₂O₃∶Cr thin films are amorphous, and their luminescence mainly appear in the blue-green band. The structures transform from amorphous into polycrystalline after 900 ℃ annealing, and near-infrared luminescence band originated from the doping Cr³⁺ is well observed. Both the crystalline quality and near-infrared luminescence intensity of the annealed films show strong dependence on oxygen flow rates, while their optical band gaps keep almost unchanged. Moreover, in the range of oxygen flow rates, it has been demonstrated that the Ga₂O₃∶Cr thin film with the strongest near-infrared luminescence intensity could be obtained under the oxygen flow rate of 4 mL/min. In such case, the obtained film has the better crystalline quality and the amount of Cr³⁺ substituted Ga³⁺ is relatively large. This findings could be helpful for preparing Ga₂O₃∶Cr thin films with better quality.

Key words: Ga₂O₃∶Cr thin film, RF magnetron sputtering, sapphire substrate, oxygen flow rate, annealing, optical property, crystalline quality

中图分类号:

O484.4

赵鑫, 刘粉红, 张晓东, 刘昌龙. 射频磁控溅射氧气流量对制备的Ga₂O₃∶Cr薄膜光致发光性能的影响[J]. 人工晶体学报, 2022, 51(8): 1353-1360.

ZHAO Xin, LIU Fenhong, ZHANG Xiaodong, LIU Changlong. Influence of Oxygen Flow Rate on the Photoluminescence Properties of Ga₂O₃∶Cr Thin Films Prepared by RF Magnetron Sputtering[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(8): 1353-1360.

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射频磁控溅射氧气流量对制备的Ga₂O₃∶Cr薄膜光致发光性能的影响

Influence of Oxygen Flow Rate on the Photoluminescence Properties of Ga₂O₃∶Cr Thin Films Prepared by RF Magnetron Sputtering

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