机械磨抛对CdZnTe薄膜阻变特性的影响

摘要/Abstract

摘要： 采用磁控溅射法在ITO玻璃上制备了CdZnTe薄膜,探究机械磨抛对CdZnTe薄膜阻变特性的影响。通过对XRD图谱、Raman光谱、AFM显微照片等实验结果分析阐明了机械磨抛影响CdZnTe薄膜阻变特性的物理机制。研究结果表明,磁控溅射制备的薄膜为闪锌矿结构,F43m空间群。机械磨抛提高了CdZnTe薄膜的结晶质量;CdZnTe薄膜粗糙度(Ra)由磨抛前的3.42 nm下降至磨抛后的1.73 nm;磨抛后CdZnTe薄膜透过率和162 cm^-1处的类CdTe声子峰振动峰增强;CdZnTe薄膜的阻变开关比由磨抛前的1.2增加到磨抛后的4.9。机械磨抛提高CdZnTe薄膜质量及阻变特性的原因可能是CdZnTe薄膜在磨抛过程中发生了再结晶。

关键词: CdZnTe, 磁控溅射, 机械磨抛, 粗糙度, 表面缺陷, 阻变特性, 再结晶

Abstract: CdZnTe thin films were prepared on ITO glass by magnetron sputtering method to explore the effect of mechanical grinding and polishing on the resistive switching characteristics of CdZnTe thin films. Through the analysis of experimental results such as XRD patterns, Raman spectroscopy, AFM micrograph, etc., the physical mechanism of mechanical grinding and polishing affecting the resistive switching characteristics of CdZnTe thin film was elucidated. The results show that the thin films prepared by magnetron sputtering are sphalerite structures with F43m space group. Mechanical grinding and polishing improves the crystallization quality of CdZnTe thin films; the roughness (Ra) of CdZnTe film decreases from 3.42 nm to 1.73 nm after grinding and polishing. Transmittance of CdZnTe thin film after grinding and polishing and the vibration peak of CdTe-like phonon peaks at 162 cm^-1 were enhanced. After grinding and polishing, the resistive switching ratio of CdZnTe thin film increases from 1.2 to 4.9. The reason why mechanical grinding and polishing improves the quality and resistive switching characteristics of CdZnTe thin films may be that CdZnTe thin films are recrystallize during the grinding process.

Key words: CdZnTe, magnetron sputtering, mechanical grinding and polishing, roughness, surface defect, resistive switching characteristic, recrystallization

中图分类号:

TN304

孔帅, 吴敏, 聂凡, 曾冬梅. 机械磨抛对CdZnTe薄膜阻变特性的影响[J]. 人工晶体学报, 2022, 51(11): 1878-1883.

KONG Shuai, WU Min, NIE Fan, ZENG Dongmei. Effect of Mechanical Grinding and Polishing on Resistive Switching Characteristics of CdZnTe Thin Films[J]. Journal of Synthetic Crystals, 2022, 51(11): 1878-1883.

参考文献

[1] MORALES-ACEVEDO A. Analytical model for the photocurrent of solar cells based on graded band-gap CdZnTe thin films[J]. Solar Energy Materials and Solar Cells, 2011, 95(10): 2837-2841.
[2] TAKAHASHI T, WATANABE S. Recent progress in CdTe and CdZnTe detectors[J]. IEEE Transactions on Nuclear Science, 2001, 48(4): 950-959.
[3] CHANDER S, DHAKA M S. Time evolution to CdCl₂ treatment on Cd-based solar cell devices fabricated by vapor evaporation[J]. Solar Energy, 2017, 150: 577-583.
[4] CHANDER S, DHAKA M S. Effect of thickness on physical properties of electron beam vacuum evaporated CdZnTe thin films for tandem solar cells[J]. Physica E: Low-Dimensional Systems and Nanostructures, 2016, 84: 112-117.
[5] 潘松海.铝诱导CdZnTe多晶薄膜的制备及物理特性研究[D].北京:北京化工大学,2013.
PAN S H. Preparation and properties of CdZnTe thin film by aluminum induced crystallization[D]. Beijing: Beijing University of Chemical Technology, 2013(in Chinese).
[6] 郝正同,谢泉,杨子义.磁控溅射法中影响薄膜生长的因素及作用机理研究[J].贵州大学学报(自然科学版),2010,27(1):62-66.
HAO Z T, XIE Q, YANG Z Y. Influences of sputtering parameters on performance of thin film[J]. Journal of Guizhou University (Natural Science Edition), 2010, 27(1): 62-66(in Chinese).
[7] 刘其军,刘正堂,闫锋,等.射频磁控反应溅射制备Y₂O₃薄膜沉积分布的研究[J].中山大学研究生学刊(自然科学与医学版),2008(4):48-53.
LIU Q J, LIU Z T, YAN F, et al. Study of sediment about Y₂O₃ by radio frequency magnetron reactive sputtering[J]. Journal of the Graduates Sun YAT-SEN University(Natural Sciences.Medicine), 2008(4): 48-53(in Chinese).
[8] 张大众,朱丽慧,孙士文,等.表面处理对Au-CdZnTe电极接触性能的影响[J].红外技术,2016,38(7):571-576.
ZHANG D Z, ZHU L H, SUN S W, et al. The effect of surface treatments on the contact performance of Au-CdZnTe[J]. Infrared Technology, 2016, 38(7): 571-576(in Chinese).
[9] 侯晓敏,张瑛侠,巩锋.软脆碲锌镉衬底的新型化学抛光技术研究[J].激光与红外,2018,48(10):1264-1267.
HOU X M, ZHANG Y X, GONG F. Study of new chemical polishing technology for soft-brittle CdZnTe substrates[J]. Laser ＆ Infrared, 2018, 48(10): 1264-1267(in Chinese).
[10] YANG F, HUANG J, ZOU T Y, et al. The influence of surface processing on properties of CdZnTe films prepared by close-spaced sublimation[J]. Surface and Coatings Technology, 2019, 357: 575-579.
[11] LI Y W, WANG Y W, ZHANG W Y, et al. The effect of chemical polishing treatment on the microstructure, photoelectric properties of CdZnTe polycrystalline films[J]. Materials Science in Semiconductor Processing, 2021, 124: 105608.
[12] LALITHA S, SATHYAMOORTHY R, SENTHILARASU S, et al. Characterization of CdTe thin film—dependence of structural and optical properties on temperature and thickness[J]. Solar Energy Materials and Solar Cells, 2004, 82(1/2): 187-199.
[13] VIDHYA S N, BALASUNDARAM O N, CHANDRAMOHAN M. The effect of annealing temperature on structural, morphological and optical properties of CdZnTe thin films[J]. Optik, 2015, 126(24): 5460-5463.
[14] YASUHARA R, FUJIWARA K, HORIBA K, et al. Inhomogeneous chemical states in resistance-switching devices with a planar-type Pt/CuO/Pt structure[J]. Applied Physics Letters, 2009, 95(1): 012110.
[15] LIU X J, SADAF S M, PARK S, et al. Complementary resistive switching in niobium oxide-based resistive memory devices[J]. IEEE Electron Device Letters, 2013, 34(2): 235-237.