LPCVD法制备TOPCon太阳能电池工艺研究

人工晶体学报 ›› 2023, Vol. 52 ›› Issue (1): 149-154.

LPCVD法制备TOPCon太阳能电池工艺研究

王举亮, 贾永军

青海黄河上游水电开发有限责任公司西安太阳能电力分公司,西安 710100

收稿日期:2022-09-23 出版日期:2023-01-15 发布日期:2023-02-15
通信作者: 贾永军,工程师。E-mail:0411040314@163.com
作者简介:王举亮(1984—),男,陕西省人,工程师。E-mail:308999588@qq.com

Preparation of TOPCon Solar Cells by LPCVD Method

WANG Juliang, JIA Yongjun

Xian Solar Power Branch, QingHai Huanghe Hydropower Development Co., Ltd., Xian 710100, China

Received:2022-09-23 Online:2023-01-15 Published:2023-02-15

摘要/Abstract

摘要： 本文主要对低压化学气相沉积(LPCVD)法制备N型高效晶硅隧穿氧化层钝化接触(TOPCon)电池工艺进行研究。分析LPCVD法制备隧穿氧化层及多晶硅层的影响因素,研究了不同氧化层厚度、多晶硅厚度及多晶硅层中P掺杂量对太阳能电池转换效率的影响。结果表明:当隧穿氧化层厚度在1.55 nm时,钝化效果最佳;多晶硅层厚度120 nm时V_oc达到最高值;多晶硅层厚度在90 nm时E_ff最高。当P掺杂量为3.0×10¹⁵ cm^-2时可获得较高的V_oc,原因是随着P掺杂量的增加,多晶硅层场钝化效果提高。

关键词: TOPCon电池, LPCVD, 隧穿氧化层, 多晶硅层, 钝化, 掺杂

Abstract: This paper mainly studies the preparation process of N-type high-efficient crystalline silicon tunnel oxide passivated contact (TOPCon) cells by low pressure chemical vapor deposition (LPCVD) method. The influencing factors of the preparation of tunnel oxide layer and polycrystalline silicon layer by LPCVD were studied and analyzed. The effects of different oxide layer thickness, polysilicon thickness and polysilicon doping amount on the efficiency were studied. The results show that: the thickness of tunneling oxide layer of 1.55 nm shows the best passivation effect; the V_oc reaches the highest value when the thickness of polysilicon layer is 120 nm; the E_ff reaches the highest when the thickness of polysilicon layer is 90 nm. The field passivation effect of polysilicon layer increases with the increase of P doping concentration. Higher V_oc can be obtained when the P doping concentration is 3.0×10¹⁵ cm^-2.

Key words: TOPCon cell, LPCVD, tunnel oxide layer, polycrystalline silicon layer, passivation, doping

中图分类号:

TM914.4

王举亮, 贾永军. LPCVD法制备TOPCon太阳能电池工艺研究[J]. 人工晶体学报, 2023, 52(1): 149-154.

WANG Juliang, JIA Yongjun. Preparation of TOPCon Solar Cells by LPCVD Method[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(1): 149-154.

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