基于复合势垒的AlGaN/GaN异质结材料的制备与性能研究

人工晶体学报 ›› 2023, Vol. 52 ›› Issue (5): 746-752.

基于复合势垒的AlGaN/GaN异质结材料的制备与性能研究

彭大青^1,2,3, 李忠辉^1,2,3, 蔡利康¹, 李传皓^1,2,3, 杨乾坤^1,2,3, 张东国^1,2,3, 罗伟科^1,2,3

1.南京电子器件研究所,南京 210016;
2.微波毫米波单片集成和模块电路重点实验室,南京 210016;
3.中国电子科技集团有限公司碳基电子重点实验室,南京 210016

收稿日期:2023-02-08 出版日期:2023-05-15 发布日期:2023-06-05
通信作者: 李忠辉,博士,研究员。E-mail:zhonghuili@126.com
作者简介:彭大青(1982—),男,江苏省人,博士,高级工程师。E-mail:pengdaqing1@126.com
基金资助:
江苏省重点研发计划(SBE2020020137)

Growth and Properties of AlGaN/GaN Heterojunction Material with Coupled Barrier

PENG Daqing^1,2,3, LI Zhonghui^1,2,3, CAI Likang¹, LI Chuanhao^1,2,3, YANG Qiankun^1,2,3, ZHANG Dongguo^1,2,3, LUO Weike^1,2,3

1. Nanjing Electronic Devices Institute, Nanjing 210016, China;
2. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing 210016, China;
3. Key Laboratory of Carbon-based Electronics, China Electronics Technology Group Corporation, Nanjing 210016, China

Received:2023-02-08 Online:2023-05-15 Published:2023-06-05

摘要/Abstract

摘要： 针对高线性氮化镓微波功率器件研制需求,设计并外延生长了复合势垒的Al_0.26Ga_0.74N/GaN/Al_0.20Ga_0.80N/GaN异质结构材料,通过理论计算和电容-电压(C-V)测试表明复合势垒材料存在两层二维电子气沟道。生长的复合势垒材料二维电子气迁移率达到1 510 cm²·V^-1·s^-1,面密度达到9.7×10¹² cm^-2。得益于双沟道效应,基于复合势垒材料研制的器件跨导存在两个峰,使得跨导明显展宽,达到3.0 V,是常规材料的1.5倍。复合势垒结构器件的跨导一阶导数与二阶导数具有更加优异的特性,表明其具有更高的谐波抑制能力,显示复合势垒AlGaN/GaN异质结构在高线性应用上的优势。

关键词: AlGaN/GaN异质结, 复合势垒, 金属有机物气相沉积, 高线性, 跨导, 二维电子气

Abstract: A novel coupled barrier heterojunction structure (i.e. Al_0.26Ga_0.74N/GaN/Al_0.20Ga_0.80N/GaN) was proposed and prepared in this paper to improve transconductance linearity of GaN high electron mobility transistor. A double two-dimensional electron gas (2DEG) channel in the coupled barrier heterojunction structure is demonstrated by theoretically calculation and capacitance-voltage (C-V) measurement. 2DEG mobility of 1 510 cm²·V^-1·s^-1 and sheet density of 9.7×10¹² cm^-2 are obtained. Benefiting from the double channels, the transconductance profile of the device with coupled heterojunction barrier structure shows two peaks, and the voltage swing is 3.0 V, which is 1.5 times larger than that of normal structure. First-order and second-order derivative characteristics of transconductance indicate that the device of the coupled barrier structure has higher harmonic suppression capability. This study demonstrates a superiority of coupled barrier heterojunction in the area of high linearity application.

Key words: AlGaN/GaN heterojunction, coupled barrier, metal-organic chemical vapor deposition, high linearity, transconductance, two-dimensional electron gas

中图分类号:

彭大青, 李忠辉, 蔡利康, 李传皓, 杨乾坤, 张东国, 罗伟科. 基于复合势垒的AlGaN/GaN异质结材料的制备与性能研究[J]. 人工晶体学报, 2023, 52(5): 746-752.

PENG Daqing, LI Zhonghui, CAI Likang, LI Chuanhao, YANG Qiankun, ZHANG Dongguo, LUO Weike. Growth and Properties of AlGaN/GaN Heterojunction Material with Coupled Barrier[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(5): 746-752.

参考文献

[1] MISHRA U, SHEN L, KAZIOR T, et al. GaN-based RF power devices and amplifiers[J]. Proceedings of the IEEE, 2008, 96: 287-305.
[2] PENGELLY R S, WOOD S M, MILLIGAN J W, et al. A review of GaN on SiC high electron-mobility power transistors and MMICs[J]. IEEE Transactions on Microwave Theory and Techniques, 2012, 60(6): 1764-1783.
[3] HAO Y, MA X H, MI M H, et al. Research on GaN-Based RF devices: high-frequency gate structure design, submicrometer-length gate fabrication, suppressed SCE, low parasitic resistance, minimized current collapse, and lower gate leakage[J]. IEEE Microwave Magazine, 2021, 22(4): 34-48.
[4] PEDRO J C, NUNES L C, CABRAL P M. Soft compression and the origins of nonlinear behavior of GaN HEMTs[C]. 44th European Microwave Conference, 2014: 1297-1300.
[5] LEE D, LIU Z H, PALACIOS T. GaN high electron mobility transistors for sub-millimeter wave applications[J]. Japanese Journal of Applied Physics, 2014, 53(10): 100212.
[6] LIU Y, TREW R, BILBRO G, et al. Linearity limitations of AlGaN/GaN HFET’s[C]. IEEE Annual Wireless and Microwave Technology Conference, 2006, Clearwater Beach, FL, USA.
[7] JENA D, RAJAN S. Effect of optical phonon scattering on the performance of GaN transistors[EB/OL]. 2010: arXiv: 1008.1154. https://arxiv.org/abs/1008.1154.
[8] KHURGIN J, BAJAJ S, RAJAN S. Amplified spontaneous emission of phonons as a likely mechanism for density-dependent velocity saturation in GaN transistors[J]. Applied Physics Express, 2016, 9(9): 94101.1.
[9] PALACIOS T, RAJAN S, HEIKMAN S, et al. Influence of the dynamic access resistance in the g_m and f_T linearity of AlGaN/GaN HEMTs[J]. IEEE Transactions on Electron Devices, 2005, 52(10): 2117-2123.
[10] TREW R, LIU Y Y, BILBRO L, et al. Nonlinear source resistance in high-voltage microwave AlGaN/GaN HFETs[J]. IEEE Transactions on Microwave Theory and Techniques, 2006, 54(5): 2061-2067.
[11] XIA J, ZHU X W, ZHANG L, et al. High-efficiency GaN Doherty power amplifier for 100-MHz LTE-advanced application based on modified load modulation network[J]. IEEE Transactions on Microwave Theory and Techniques, 2013, 61(8): 2911-2921.
[12] CHO Y, KANG D, KIM J, et al. A dual power-mode multi-band power amplifier with envelope tracking for handset applications[J]. IEEE Transactions on Microwave Theory and Techniques, 2013, 61(4): 1608-1619.
[13] ZHANG K, KONG Y C, ZHU G R, et al. High-linearity AlGaN/GaN FinFETs for microwave power applications[J]. IEEE Electron Device Letters, 2017, 38(5): 615-618.
[14] CHINI A, BUTTARI D, COFFIE R, et al. Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs[J]. IEEE Electron Device Letters, 2004, 25(5): 229-231.
[15] SOHEL S H, XIE A, BEAM E, et al. X-band power and linearity performance of compositionally graded AlGaN channel transistors[J]. IEEE Electron Device Letters, 2018, 39(12): 1884-1887.
[16] ZHANG Y C, WANG Z Z, GUO R, et al. High performance InGaN double channel high electron mobility transistors with strong coupling effect between the channels[J]. Applied Physics Letters, 2018, 113(23): 233503.
[17] LIU J, ZHOU Y G, CHU R M, et al. Highly linear Al_0.3Ga_0.7N-Al_0.05Ga_0.95N-GaN composite-channel HEMTs[J]. IEEE Electron Device Letters, 2005, 26(3): 145-147.
[18] CHOI P, RADHAKRISHNA U, BOON C C, et al. Linearity enhancement of a fully integrated 6-GHz GaN power amplifier[J]. IEEE Microwave and Wireless Components Letters, 2017, 27(10): 927-929.
[19] 李鹏涛, 王鑫, 罗贤, 等. Al_xGa_1-xN氮化物结构和热力学性质的第一性原理研究[J]. 人工晶体学报, 2021, 50(12): 2212-2218.
LI P T, WANG X, LUO X, et al. First-principle study on structure and thermodynamics properties of Al_xGa_1-xN nitride[J]. Journal of Synthetic Crystals, 2021, 50(12): 2212-2218 (in Chinese).
[20] 开翠红, 王蓉, 杨德仁, 等. 基于碳化硅衬底的宽禁带半导体外延[J]. 人工晶体学报, 2021, 50(9): 1780-1795.
KAI C H, WANG R, YANG D R, et al. Epitaxy of wide bandgap semiconductors on silicon carbide substrate[J]. Journal of Synthetic Crystals, 2021, 50(9): 1780-1795 (in Chinese).
[21] BENYAHYA N, MAZARI H, BENSEDDIK N, et al. Characterization and comparison between Ig(Vgs) structures HEMT AlInN/GaN and AlGaN/GaN[J]. Optical and Quantum Electronics, 2014, 46(1): 209-219.