退火方式及温度对层层碘化法CuI薄膜结构、形貌和光电性能的影响

人工晶体学报 ›› 2023, Vol. 52 ›› Issue (5): 842-848.

退火方式及温度对层层碘化法CuI薄膜结构、形貌和光电性能的影响

耿方娟¹, 杨磊², 朱嘉琦¹

1.哈尔滨工业大学航天学院,复合材料与结构研究所,哈尔滨 150080;
2.哈尔滨工业大学分析测试中心,哈尔滨 150001

收稿日期:2023-01-31 出版日期:2023-05-15 发布日期:2023-06-05
通信作者: 朱嘉琦,博士,教授。E-mail:zhujq@hit.edu.cn
作者简介:耿方娟(1990—),女,山东省人,博士研究生。E-mail:genfangjuan@163.com
基金资助:
国家自然科学基金(52032004)

Effect of Annealing Method and Temperature on Structure, Morphology and Photoelectric Properties of CuI Thin Films by Layer by Layer Iodization

GENG Fangjuan¹, YANG Lei², ZHU Jiaqi¹

1. Center for Composite Materials and Structures, School of Astronautics, Harbin Institute of Technology, Harbin 150080, China;
2. Center of Analysis Measurement, Harbin Institute of Technology, Harbin 150001, China

Received:2023-01-31 Online:2023-05-15 Published:2023-06-05

摘要/Abstract

摘要： CuI薄膜可以通过Cu金属膜的碘化法来制备,为了优化碘化法CuI薄膜的光电特性,本文通过层层碘化法制备了CuI薄膜样品,并采用后退火和层层退火两种方式处理CuI样品,对薄膜样品的结构特性、表面形貌和光电性能进行了分析。结果表明,层层退火方式有效提高了样品的结晶度,而后退火方式则有利于薄膜表面CuI的二维平面移动,从而增加了薄膜表面的致密性。后退火方式将CuI薄膜的透过率提高至80%~90%,层层退火方式将CuI薄膜的电阻率优化至0.034 Ω·cm。

关键词: p型, CuI, 后退火, 层层退火, 透过率, 电学性能, 光电性能

Abstract: CuI films can be prepared by the iodization of Cu metal films. In order to optimize the photoelectric properties of iodized CuI film, the CuI films were prepared with layer by layer iodization method, and then the CuI films were treated by post annealing and layer by layer annealing process. The structure, surface morphology and photoelectric properties of the samples by different annealing process were analyzed. The crystallinity of the CuI film is improved significantly after layer by layer annealing process. The surface density increases under the post annealing process, which can be ascribed to the movement of CuI grains along the two-dimensional plane. The transmittance of the CuI film increases to 80%~90% after post annealing process, and the resistivity of the CuI film is optimized to 0.034 Ω·cm after layer by layer annealing.

Key words: p-type, CuI, post annealing, layer by layer annealing, transmittance, electrical property, photoelectric property

中图分类号:

TM23
O484

耿方娟, 杨磊, 朱嘉琦. 退火方式及温度对层层碘化法CuI薄膜结构、形貌和光电性能的影响[J]. 人工晶体学报, 2023, 52(5): 842-848.

GENG Fangjuan, YANG Lei, ZHU Jiaqi. Effect of Annealing Method and Temperature on Structure, Morphology and Photoelectric Properties of CuI Thin Films by Layer by Layer Iodization[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(5): 842-848.

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