半导体单量子点的分子束外延生长及调控

摘要/Abstract

摘要： Ⅲ-Ⅴ化合物半导体外延单量子点具有类原子的分立能级结构,能够按需产生单光子和纠缠多光子态,而且可以直接与成熟的集成光子技术结合,因此被认为是制备高品质固态量子光源、构建可扩展性量子网络最有潜力的固态量子体系之一。本综述的重点是介绍高品质单量子点的分子束外延生长及精确调控的方法。首先介绍了晶圆级均匀单量子点的分子束外延生长,并探讨了调控浸润层态和量子点对称性的生长方法;接下来概述了利用应变层调控量子点发射波长的方法,总结了几种常见的电调控单个量子点器件的设计原理;最后讨论了最近为实现优异量子点光源而开发的液滴外延生长技术。

关键词: 单量子点, 分子束外延, 生长调控, S-K模式, 液滴刻蚀, 单光子源, 纠缠光源

Abstract: Ⅲ-Ⅴ compound semiconductor epitaxial single quantum dots (QDs) are a promising candidate for preparing on-demand single photon/entangled photon pairs/photon cluster states due to their atom-like discrete energy levels. They can also be directly combined with mature integrated photon technology, making them one of the most promising solid-state quantum systems for preparing high-quality solid-state quantum light sources and constructing scalable quantum networks. In this paper, the growth and modulation of high performance semiconductor QDs using molecular beam epitaxy are discussed. Firstly, the wafer-scale epitaxy of low density InAs/GaAs QD and the technique of suppressing wetting layer states and obtaining low excitonic fine structure splitting of QDs are introduced. Then, the method of tuning the emission wavelength of QDs through strain layer is introduced, as well as the electrically controlled p-i-n devices to modulate the charges of exciton states and the emission wavelengths. Finally, the recently developed droplet epitaxy growth technique is discussed, aiming to achieve excellent quantum dot light sources.

Key words: single quantum dot, molecular beam epitaxy, growth modulation, S-K mode, droplet etching, single photon source, entangled light source

中图分类号:

宋长坤, 黄晓莹, 陈英鑫, 喻颖, 余思远. 半导体单量子点的分子束外延生长及调控[J]. 人工晶体学报, 2023, 52(6): 982-996.

SONG Changkun, HUANG Xiaoying, CHEN Yingxin, YU Ying, YU Siyuan. Modulation of Semiconductor Single Quantum Dots Using Molecular Beam Epitaxy[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(6): 982-996.

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