单晶α-Sn薄膜的外延生长及输运性质研究进展

人工晶体学报 ›› 2023, Vol. 52 ›› Issue (6): 1025-1035.

所属专题：半导体薄膜与外延技术

单晶α-Sn薄膜的外延生长及输运性质研究进展

李秉欣¹, 丁元丰¹, 芦红^1,2

1.南京大学,固体微结构物理国家重点实验室& 现代工程与应用科学学院,南京 210093;
2.江苏省功能材料设计原理与应用技术重点实验室,南京 210023

收稿日期:2023-03-16 出版日期:2023-06-15 发布日期:2023-06-30
通信作者: 芦红,博士,教授。E-mail:hlu@nju.edu.cn
作者简介:李秉欣(2000—),男,甘肃省人,硕士研究生。E-mail:502022340037@smail.nju.edu.cn
基金资助:
国家重点研发计划(2018YFA0306200);国家自然科学基金重点项目(51732006,11890702,51721001)

Research Progress on Epitaxial Growth and Transport Property of Single Crystal α-Sn Films

LI Bingxin¹, DING Yuanfeng¹, LU Hong^1,2

1. National Laboratory of Solid-State Microstructure & College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China;
2. Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing 210023, China

Received:2023-03-16 Online:2023-06-15 Published:2023-06-30

摘要/Abstract

摘要： α-Sn(灰锡)是一种重要的拓扑材料,据理论预测,打破α-Sn的对称性可以得到拓扑绝缘体、拓扑半金属等多种拓扑相。目前α-Sn的研究以理论计算和角分辨光电子能谱研究能带结构为主,受限于衬底条件,高质量的α-Sn外延生长及其电输运性质的研究较少。本文结合课题组近几年在α-Sn薄膜外延生长和拓扑输运性质方面的研究进展,系统地综述了高质量单晶α-Sn薄膜的分子束外延生长、电输运的测试方法及拓扑性质的验证。通过对输运性质的研究证实了α-Sn的狄拉克半金属相和自旋极化拓扑表面态,进一步通过改变薄膜厚度和外加应力的方式来实现α-Sn拓扑性质的调控。以上工作不仅为进一步研究α-Sn的拓扑性质提供了重要依据,也为基于α-Sn的新型量子器件研究提供了重要的材料基础。

关键词: α-Sn, 拓扑材料, 分子束外延, 输运表征, 狄拉克半金属, 拓扑绝缘体

Abstract: As an important topological material, α-Sn (also known as grey tin) can be turned into many topological phases including topological insulator and topological semimetal by breaking its symmetry. Until now, the study on α-Sn has been mainly focused on the topological band structures by theorical calculation and angle resolved photoemission spectroscopy (ARPES), while the epitaxial growth of α-Sn and its electronic transport properties are seldom reported due to the substrate contribution. In this paper, the research progress of α-Sn is reviewed based on the recent progress made by our group, including the epitaxial growth of high quality α-Sn films by molecular beam epitaxy (MBE), the methodology of transport measurements and topological property investigation. The transport evidence of topological semimetal phase and spin-polarized topological surface state in α-Sn is demonstrated and the topological property is engineered by thickness and strain, etc. This work provides not only important evidences for further investigation on the topological property of α-Sn, but also an essential material platform for novel quantum devices based on α-Sn.

Key words: α-Sn, topological material, molecular beam epitaxy, transport measurement, Dirac semimetal, topological insulator

中图分类号:

O484.1

李秉欣, 丁元丰, 芦红. 单晶α-Sn薄膜的外延生长及输运性质研究进展[J]. 人工晶体学报, 2023, 52(6): 1025-1035.

LI Bingxin, DING Yuanfeng, LU Hong. Research Progress on Epitaxial Growth and Transport Property of Single Crystal α-Sn Films[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(6): 1025-1035.

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单晶α-Sn薄膜的外延生长及输运性质研究进展

Research Progress on Epitaxial Growth and Transport Property of Single Crystal α-Sn Films

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