碳化硅晶圆的表面/亚表面损伤研究进展

人工晶体学报 ›› 2023, Vol. 52 ›› Issue (11): 1907-1921.

• 综合评述 • 下一篇

碳化硅晶圆的表面/亚表面损伤研究进展

李国峰^1,2, 陈泓谕¹, 杭伟¹, 韩学峰^2,3, 袁巨龙¹, 皮孝东^2,3, 杨德仁^2,3, 王蓉^2,3

1.浙江工业大学超精密加工研究中心,杭州 310023;
2.浙江大学杭州国际科创中心,先进半导体研究院和浙江省宽禁带功率半导体材料与器件重点实验室,杭州 311200;
3.浙江大学硅及先进半导体材料全国重点实验室&材料科学与工程学院,杭州 310027

收稿日期:2023-05-28 出版日期:2023-11-15 发布日期:2023-11-17
通信作者: 袁巨龙,博士,教授。E-mail:jlyuan@zjut.edu.cn;皮孝东,博士,教授。 E-mail:xdpi@zju.edu.cn;王蓉,博士,研究员。E-mail:rong_wang@zju.edu.cn
作者简介:李国峰(1996—),男,浙江省人,硕士研究生。E-mail:2112102259@zjut.edu.cn
基金资助:
国家自然科学基金(62274143,U22A2075,12204161,U20A20293);浙江省“尖兵”“领雁”研发计划(2022C01021);国家重点研发计划(2018YFB2200101);中央高校基本科研经费(2018XZZX003-02);国家自然科学基金创新群体(61721005)

Research Progress on Surface/Subsurface Damages of 4H Silicon Carbide Wafers

LI Guofeng^1,2, CHEN Hongyu¹, HANG Wei¹, HAN Xuefeng^2,3, YUAN Julong¹, PI Xiaodong^2,3, YANG Deren^2,3, WANG Rong^2,3

1. Ultra-precision Machining Research Center, Zhejiang University of Technology, Hangzhou 310023, China;
2. Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Innovation Center, Zhejiang University, Hangzhou 311200, China;
3. State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

Received:2023-05-28 Online:2023-11-15 Published:2023-11-17

摘要/Abstract

摘要： 表面无损伤、粗糙度低的半导体碳化硅(4H-SiC)衬底是制造电力电子器件和射频微波器件的理想衬底材料,在新能源、轨道交通、智能电网和5G通信等领域具有广阔的应用前景。4H-SiC衬底的加工过程包括切片、减薄、研磨、抛光和清洗,在4H-SiC衬底加工过程中引入的表面/亚表面损伤均严重影响材料性能、同质外延薄膜性质,以及器件性能和可靠性。本文将重点介绍4H-SiC晶片在切片、减薄、研磨、抛光等各个加工环节中表面/亚表面损伤的形成和去除机制,基于4H-SiC晶圆表面/亚表面损伤的检测方法,综述亚表面损伤的形貌和表征参量,并简单介绍三种常见的亚表面损伤的消除方法,分析其技术优势和发展瓶颈,对去除亚表面损伤工艺的发展趋势进行了展望。

关键词: 半导体, 4H-SiC, 衬底晶圆, 表面/亚表面损伤, 晶圆加工

Abstract: 4H silicon carbide (4H-SiC) substrate wafers without surface/subsurface damages and low surface roughness are ideal substrates for the development of power electronics and radio frequency (RF) microwave devices, which hold great promise in applications of new energy, rail transportation, smart grid and 5G communication. The processing of 4H-SiC substrate wafers includes slicing, grinding, lapping, polishing and cleaning. However, the surface damages (SDs) and subsurface damages (SSDs) introduced during the processing of 4H-SiC substrates affects the properties of 4H-SiC substrates and epitaxial layers, and thus the performance and reliability of devices based on 4H-SiC. This paper focuses on the formation and removal mechanisms of SDs/SSDs during the processing of 4H-SiC substrate wafers. Based on the detection method of SDs/SSDs, the morphologies and characterization approaches of SDs/SSDs are reviewed. Finally, three commonly used technologies for the removal SDs/SSDs, along with their technical advantages, development challenges and trends, are briefly discussed.

Key words: semiconductor, 4H-SiC, substrate wafer, surface/subsurface damage, wafer processing

中图分类号:

李国峰, 陈泓谕, 杭伟, 韩学峰, 袁巨龙, 皮孝东, 杨德仁, 王蓉. 碳化硅晶圆的表面/亚表面损伤研究进展[J]. 人工晶体学报, 2023, 52(11): 1907-1921.

LI Guofeng, CHEN Hongyu, HANG Wei, HAN Xuefeng, YUAN Julong, PI Xiaodong, YANG Deren, WANG Rong. Research Progress on Surface/Subsurface Damages of 4H Silicon Carbide Wafers[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(11): 1907-1921.

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碳化硅晶圆的表面/亚表面损伤研究进展

Research Progress on Surface/Subsurface Damages of 4H Silicon Carbide Wafers

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