氧化镓单晶在酸碱条件下的腐蚀坑形貌研究

人工晶体学报 ›› 2023, Vol. 52 ›› Issue (12): 2186-2195.

氧化镓单晶在酸碱条件下的腐蚀坑形貌研究

高崇^1,2, 韦金汕^3,4, 欧阳政^1,2, 何敬晖^1,2, 王增辉⁵, 卜予哲⁶, 赛青林^6,7, 赵鹏^1,2

1.北京中材人工晶体研究院有限公司,北京 100018;
2.中材人工晶体研究院有限公司,北京 100018;
3.华南师范大学半导体科学与技术学院,广州 510631;
4.杭州光学精密机械研究所,杭州 311421;
5.中材高新材料股份有限公司,北京 100102;
6.中国科学院上海光学精密机械研究所,上海 201800;
7.中国科学院大学材料科学与光电技术学院,北京 100049

收稿日期:2023-09-28 出版日期:2023-12-15 发布日期:2023-12-26
通信作者: 赵鹏,博士,高级工程师。E-mail:zhaopeng8903@163.com
作者简介:高崇(1988—),男,山西省人,高级工程师。E-mail:gaochong2015@126.com
基金资助:
国家重点研发计划(2022YFB3605500);北京市科技新星计划(20230484381)

Gallium Oxide Single Crystal: Morphology of Corrosion Pits under Acid- and Alkaline-Base Conditions

GAO Chong^1,2, WEI Jinshan^3,4, OUYANG Zheng^1,2, HE Jinghui^1,2, WANG Zenghui⁵, BU Yuzhe⁶, SAI Qinglin^6,7, ZHAO Peng^1,2

1. Beijing Sinoma Synthetic Crystals Co., Ltd., Beijing 100018, China;
2. Sinoma Synthetic Crystals Co., Ltd., Beijing 100018, China;
3. School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, China;
4. Hangzhou Institute of Optics and Fine Mechancis, Hangzhou 311421, China;
5. Sinoma Advanced Materials Co., Ltd., Beijing 100102, China;
6. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;
7. College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences, Beijing 100049, China

Received:2023-09-28 Online:2023-12-15 Published:2023-12-26

摘要/Abstract

摘要： 氧化镓晶体材料由于其优异的性能以及可以用熔体法生长的优势,在功率器件、光电领域有着巨大的潜力。近年来,国内外众多专家也随之开展对氧化镓单晶材料的研究工作,高质量低缺陷的氧化镓单晶材料对后续的外延、器件的制备极其重要。目前,国际上主流的生长方法是导模法,导模法具有生长周期短、尺寸大及生长稳定等优点,然而在晶体缺陷控制方面还有很大的进步空间。本文围绕氧化镓单晶的腐蚀坑形貌,对导模法生长的氧化镓单晶进行加工制样,进行了不同酸碱条件下的腐蚀实验。详细介绍了观察到的不同腐蚀坑形貌,分析了晶体缺陷对腐蚀坑形貌的影响,对今后氧化镓单晶生长机理和晶体缺陷的研究具有重要意义。

关键词: 氧化镓单晶, 导模法, 缺陷, 腐蚀, 腐蚀坑形貌, 单晶生长

Abstract: Gallium oxide crystal materials has enormous potential in the fields of power devices and optoelectronics due to its excellent performance and the advantage of being able to grow by melt method. In recent years, numerous experts at home and abroad have also started researching gallium oxide single crystal materials. High quality and low defect gallium oxide single crystal materials are extremely important for subsequent epitaxy and device preparation. At present, the mainstream growth method internationally is edge-defined film-fed growth method (EFG), which has advantages such as short growth cycle, large size, and stable growth. However, there is still great room for progress in crystal defect control. This article focuses on the morphology of corrosion pits in gallium oxide single crystals, and processes samples of gallium oxide single crystals grown by EFG. Corrosion experiments were conducted under different acid and alkali conditions. A detailed introduction was given to the different observed corrosion pit morphologies, and the impact of crystal defects on the corrosion pit morphologies was analyzed. This is of great significance for the future research on the growth mechanism of gallium oxide single crystals and crystal defects.

Key words: gallium oxide single crystal, edge-defined film-fed growth method, defect, corrosion, corrosion pit morphology, crystal growth

中图分类号:

O734

高崇, 韦金汕, 欧阳政, 何敬晖, 王增辉, 卜予哲, 赛青林, 赵鹏. 氧化镓单晶在酸碱条件下的腐蚀坑形貌研究[J]. 人工晶体学报, 2023, 52(12): 2186-2195.

GAO Chong, WEI Jinshan, OUYANG Zheng, HE Jinghui, WANG Zenghui, BU Yuzhe, SAI Qinglin, ZHAO Peng. Gallium Oxide Single Crystal: Morphology of Corrosion Pits under Acid- and Alkaline-Base Conditions[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(12): 2186-2195.

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