原料颗粒度对AlN晶体生长的影响

人工晶体学报 ›› 2024, Vol. 53 ›› Issue (1): 58-64.

原料颗粒度对AlN晶体生长的影响

俞瑞仙^1,2, 王国栋^1,2, 王守志^1,2, 曹文豪², 胡小波^1,2, 徐现刚^1,2, 张雷^1,2

1.山东大学深圳研究院,深圳 518000;
2.山东大学新一代半导体材料研究院,晶体材料国家重点实验室,济南 250100

收稿日期:2023-06-27 出版日期:2024-01-15 发布日期:2024-01-15
通信作者: 胡小波,博士,教授。 E-mail:xbhu@sdu.edu.cn
张雷,博士,长聘研究员。 E-mail:leizhang528@sdu.edu.cn
作者简介:俞瑞仙(1987—),男,山东省人,博士研究生。E-mail:yuruixian0001@126.com
基金资助:
深圳市科技计划(JCYJ20210324141607019);山东省自然科学基金(ZR2022QF044)

Effect of Granularity of Raw Materials on Growth of AlN Crystal

YU Ruixian^1,2, WANG Guodong^1,2, WANG Shouzhi^1,2, CAO Wenhao², HU Xiaobo^1,2, XU Xiangang^1,2, ZHANG Lei^1,2

1. Shenzhen Research Institute of Shandong University, Shenzhen 518000, China;
2. State Key Laboratory of Crystal Material, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China

Received:2023-06-27 Online:2024-01-15 Published:2024-01-15

摘要/Abstract

摘要： 本文通过对氮化铝(AlN)粉末进行烧结,制备了AlN晶体生长用的多晶颗粒料,测试发现,与粉末原料相比,多晶颗粒料的杂质显著降低。利用数值模拟软件研究了不同原料孔隙率对晶体生长的影响,分析了相同晶体生长工艺条件下原料内部温场的分布情况。使用不同颗粒度的原料进行了AlN晶体生长,发现最适合AlN晶体生长的温度梯度和原料颗粒度。最后用颗粒度为1~3 mm的多晶颗粒料进行晶体生长,生长出直径为1英寸、厚度为15 mm的AlN晶体。对晶体进行切割、研磨、抛光,得到1英寸AlN晶片。采用高分辨率X射线衍射(HRXRD)和拉曼光谱对晶片进行表征。结果发现HRXRD摇摆曲线半峰全宽(FWHM)为154.66″,E₂(high)声子模的峰位置和FWHM分别为656.7和4.3 cm^-1,表明该AlN晶体结晶质量良好。

关键词: AlN晶体, 多晶颗粒料, 孔隙率, VR-PVT, 温场, 杂质

Abstract: Aluminum nitride (AlN) powder was sintered to prepare polycrystalline particle materials for the growth of AlN crystal. It was found that the polycrystalline particle materials have significantly reduced impurities compared to the raw materials. The influence of different raw material porosity on crystal growth was simulated by numerical simulation software, and the distribution of temperature field inside the raw materials under the same crystal growth conditions was also analyzed. AlN crystal growth was carried out using raw materials with different granularity, and the most suitable temperature gradient and granularity of raw materials were obtained. Finally, AlN crystals with a diameter of 1 inch and a thickness of 15 mm were successfully grown using polycrystalline particles with particle sizes of 1~3 mm. 1 inch AlN wafer was obtained by cutting, grinding and polishing of the grown AlN crystals. The wafer was characterized by high-resolution X-ray diffraction (HRXRD) and Raman spectroscopy. The results show that the full width at half maximum (FWHM) of the HRXRD rocking curve is 154.66″, the peak position and FWHM of E₂(high) phonon mode are 656.7 and 4.3 cm ^-1, respectively, indicating that the grown AlN has good crystallization quality.

Key words: AlN crystal, polycrystalline granular material, porosity, VR-PVT, temperature field, impurity

中图分类号:

俞瑞仙, 王国栋, 王守志, 曹文豪, 胡小波, 徐现刚, 张雷. 原料颗粒度对AlN晶体生长的影响[J]. 人工晶体学报, 2024, 53(1): 58-64.

YU Ruixian, WANG Guodong, WANG Shouzhi, CAO Wenhao, HU Xiaobo, XU Xiangang, ZHANG Lei. Effect of Granularity of Raw Materials on Growth of AlN Crystal[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(1): 58-64.

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