宽禁带半导体ZnGa2O4研究进展

摘要/Abstract

摘要： 宽禁带半导体材料因独特的物理和化学特性,在光电器件等领域展现出巨大的潜力,受到了越来越多的研究和关注。镓酸锌(ZnGa₂O₄)作为一种宽禁带半导体材料,具有禁带宽度大、结构独特、热稳定性良好等优点,在日盲紫外光电探测、X射线探测等领域具有广阔的应用前景。本文从ZnGa₂O₄的基本结构特性出发,详细介绍了ZnGa₂O₄的禁带宽度、光电性能以及ZnGa₂O₄体块单晶和薄膜的制备方法。结合国内外学者近期的一些研究成果,概述了ZnGa₂O₄在多个领域的应用前景,特别是日盲紫外光电探测、忆阻器、X射线探测和功率器件等方面的研究进展。最后对ZnGa₂O₄材料的未来发展方向提出了展望,指出可进一步提升ZnGa₂O₄材料的质量和性能,以提升器件性能,满足更高级别的应用需求。

关键词: ZnGa₂O₄, 宽禁带半导体, 光电性能, 制备方法, 应用

Abstract: Due to their unique physical and chemical properties, wide bandgap semiconductor materials have shown great potential in the field of optoelectronic devices, and have received more and more research and attention. Zinc gallate (ZnGa₂O₄) is a wide bandgap semiconductor material, showing broad application prospects in the fields of solar-blind ultraviolet photoelectric detection and X-ray detection for its wide bandgap, unique structure and good thermal stability. In this paper, based on the basic structural characteristics of ZnGa₂O₄, the bandgap, photoelectric properties of ZnGa₂O₄, the preparation methods of ZnGa₂O₄ bulk single crystal and thin film are introduced in detail. Combined with the recent research results of domestic and foreign scholars, the application prospects of ZnGa₂O₄ in many fields are summarized, especially the research progress of solar-blind ultraviolet photoelectric detection, memristor, X-ray detection and power devices. Finally, the future development direction of ZnGa₂O₄ is prospected, and it is pointed out that the quality and performance of ZnGa₂O₄materials can be further improved to improve device performance and meet higher level application requirements.

Key words: ZnGa₂O₄, wide bandgap semiconductor, photoelectric property, preparation method, application

中图分类号:

雷莎莎, 龚巧瑞, 赵呈春, 孙晓慧, 杭寅. 宽禁带半导体ZnGa₂O₄研究进展[J]. 人工晶体学报, 2024, 53(8): 1289-1301.

LEI Shasha, GONG Qiaorui, ZHAO Chengchun, SUN Xiaohui, HANG Yin. Research Progress of Wide Bandgap Semiconductor ZnGa₂O₄[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(8): 1289-1301.

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宽禁带半导体ZnGa₂O₄研究进展

Research Progress of Wide Bandgap Semiconductor ZnGa₂O₄

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