脉冲激光沉积α相氧化镓薄膜及其日盲光电探测器

doi:10.16553/j.cnki.issn1000-985x.2024.0268

摘要/Abstract

摘要： 本文采用脉冲激光沉积(PLD)技术,在m面蓝宝石衬底上外延生长了高质量亚稳态α相氧化镓(α-Ga₂O₃)薄膜,结合X射线衍射和扫描电子显微镜等表征手段,研究了不同生长温度和不同氧分压对薄膜形貌及结晶性的影响。基于优化条件下生长的异质外延α-Ga₂O₃薄膜,制备了金属-半导体-金属(MSM)结构的日盲紫外光电探测器。由于薄膜较好的结晶质量和较少的缺陷,该探测器在254 nm日盲紫外光照射下表现出良好的光电响应,5 V偏压下具有10^-6 A的光电流及10^-10 A的暗电流,光暗电流比可达10⁴,最大响应度达到36.7 A/W,最大外量子效率为1.79×10⁴%,最大探测率为2.45×10¹⁴ Jones。

关键词: 脉冲激光沉积, α相氧化镓, 生长温度, 氧分压, 金属-半导体-金属, 日盲光电探测器

Abstract: In this paper, high quality metastable α-phase gallium oxide (α-Ga₂O₃) films were epitaxial grown on m surface sapphire substrate by pulsed laser deposition (PLD) technique. The effects of different growth temperature and oxygen partial pressure on the morphology and crystallinity of the films were studied by X-ray diffraction and scanning electron microscopy. Based on the heteroepitaxial α-Ga₂O₃ films grown under optimized conditions, a metal-semiconductor-metal (MSM) solar blind UV photodetector was fabricated. Due to the good crystal quality and few defects of the film,the device demonstrates high performances under 254 nm illumination. The device has 10^-6 A photo current and 10^-10 A dark current at 5 V bias, achieving a photodark current ratio of 10⁴. The maximum responsivity is 36.7 A/W, the maximum external quantum efficiency is 1.79×10⁴%, and the maximum detectivity is 2.45×10¹⁴ Jones.

Key words: PLD, α-Ga₂O₃, growth temperature, oxygen pressure, MSM, solar blind photodetector

中图分类号:

丁子舰, 颜世琪, 徐希凡, 辛倩. 脉冲激光沉积α相氧化镓薄膜及其日盲光电探测器[J]. 人工晶体学报, 2025, 54(2): 329-336.

DING Zijian, YAN Shiqi, XU Xifan, XIN Qian. α-Phase Gallium Oxide Films and Their Solar Blind Photodetectors Based on Pulsed Laser Deposition[J]. Journal of Synthetic Crystals, 2025, 54(2): 329-336.

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