不同晶面蓝宝石衬底上α-Ga2O3雾化学气相沉积法生长研究

doi:10.16553/j.cnki.issn1000-985x.2024.0273

人工晶体学报 ›› 2025, Vol. 54 ›› Issue (2): 255-262.DOI: 10.16553/j.cnki.issn1000-985x.2024.0273

不同晶面蓝宝石衬底上α-Ga₂O₃雾化学气相沉积法生长研究

李雄杰^1,2, 宁平凡², 陈世澳², 乔思博², 程红娟³, 王英民³, 牛萍娟²

1.天津工业大学机械工程学院,天津 300387;
2.天津工业大学电子与信息工程学院,量子材料与器件研究院,天津 300387;
3.中国电子科技集团公司第四十六研究所,新型半导体晶体材料技术重点实验室,天津 300220

收稿日期:2024-11-04 发布日期:2025-03-04
通信作者: 宁平凡,博士,副教授。E-mail:ningpingfan@tiangong.edu.cn；宁平凡,博士,副教授,天津工业大学工业技术研究院副院长,天津市真空学会副理事长、中国电子学会会员、德国物理学会会员。主要从事宽禁带半导体材料、器件及其应用系统的研究工作,主持或参与国家重点研发计划、国家自然科学基金等科研项目10余项,发表学术论文40余篇,获天津市科技进步二等奖。
作者简介:李雄杰(1992—),男,河北省人,博士研究生。E-mail:1930071238@tiangong.edu.cn
基金资助:
科技部重点研发计划项目(2022YFA1204001);天津工业大学学位与研究生教育教学改革与创新项目(YJSJG202406)

Growth of α-Ga₂O₃ on Different Plane of Sapphire Substrate by Mist-CVD Method

LI Xiongjie¹, NING Pingfan², CHEN Shiao², QIAO Sibo², CHENG Hongjuan³, WANG Yingmin³, NIU Pingjuan²

1. School of Mechanical Engineering, Tiangong University, Tianjin 300387, China;
2. Institute of Quantum Materials and Devices, School of Electronics & Information Engineering, Tiangong University, Tianjin 300387, China;
3. Key Laboratory of Advanced Semiconductor Crystal Materials Technology, The 46th Research Institute, CETC, Tianjin 300220, China

Received:2024-11-04 Published:2025-03-04

摘要/Abstract

摘要： 采用雾化学气相沉积(Mist-CVD)法在不同晶面蓝宝石衬底上异质外延生长了α-Ga₂O₃薄膜,并利用XRD、SEM和紫外-可见分光光度计(UV-Vis)分析了薄膜样品的物相、光学特性和表面形貌。600 ℃以内,在C、M、A、R面蓝宝石衬底上生长纯相α-Ga₂O₃薄膜的温度窗口分别为420~480、480~550、590~600、540~600 ℃;对应纯相α-Ga₂O₃薄膜的光学带隙分别为5.12、5.23、5.25、5.21 eV。研究发现与C面蓝宝石衬底相比,在M、A、R面蓝宝石衬底上外延α-Ga₂O₃薄膜需要更高的生长温度,同时在M、A、R面蓝宝石衬底上获得的薄膜禁带宽度更大。样品表面形貌的SEM表征结果显示,不同晶面的α-Ga₂O₃薄膜表面形貌差异显著,C面蓝宝石衬底上α-Ga₂O₃薄膜存在“连续薄膜+大尺寸柱状岛”结构。本文关于不同晶面蓝宝石衬底外延α-Ga₂O₃薄膜的研究对α-Ga₂O₃材料的应用有一定参考价值。

关键词: α-Ga₂O₃, 蓝宝石衬底, 雾化学气相沉积, 异质外延, 生长温度, 禁带宽度

Abstract: α-Ga₂O₃ heteroepitaxial thin films on sapphire substrates with different crystal planes were prepared by mist-chemical vapor deposition (Mist-CVD) technique. The phase, optical properties and surface morphology of the samples were investigated by XRD, SEM and UV-Vis. The temperature windows for growing pure phase α-Ga₂O₃ thin films on C, M, A and R-plane sapphire substrates within 600 ℃ are 420~480, 480~550, 590~600 and 540~600 ℃, and optical band gaps of the pure phase α-Ga₂O₃ thin film are 5.12, 5.23, 5.25 and 5.21 eV, respectively. Compared to C-plane sapphire substrates, epitaxial α-Ga₂O₃ thin films on M, A and R-plane sapphire substrates require higher growth temperatures, and the bandgap width of the films obtained on M, A and R-plane sapphire substrates are larger. The SEM results of the sample surface show significant differences in the surface morphology of α-Ga₂O₃ thin films with different crystal planes, and there is a "continuous layer+large island" structure on the α-Ga₂O₃ thin film grown on C-plane sapphire substrate. The study of epitaxial α-Ga₂O₃ thin films on sapphire substrates with different crystal planes in this article provide valuable reference for the application of α-Ga₂O₃ materials.

Key words: α-Ga₂O₃, sapphire substrate, Mist-CVD, heteroepitaxial, growth temperature, band gap

中图分类号:

TN304.055

李雄杰, 宁平凡, 陈世澳, 乔思博, 程红娟, 王英民, 牛萍娟. 不同晶面蓝宝石衬底上α-Ga₂O₃雾化学气相沉积法生长研究[J]. 人工晶体学报, 2025, 54(2): 255-262.

LI Xiongjie, NING Pingfan, CHEN Shiao, QIAO Sibo, CHENG Hongjuan, WANG Yingmin, NIU Pingjuan. Growth of α-Ga₂O₃ on Different Plane of Sapphire Substrate by Mist-CVD Method[J]. Journal of Synthetic Crystals, 2025, 54(2): 255-262.

参考文献

[1] BARTHEL A, ROBERTS J, NAPARI M, et al. Ti alloyed α-Ga₂O₃: route towards wide band gap engineering[J]. Micromachines, 2020, 11(12): 1128.
[2] HU G C, SHAN C X, ZHANG N, et al. High gain Ga₂O₃ solar-blind photodetectors realized via a carrier multiplication process[J]. Optics Express, 2015, 23(10): 13554-13561.
[3] AIDA H, NISHIGUCHI K, TAKEDA H, et al. Growth of β-Ga₂O₃ single crystals by the edge-defined, film fed growth method[J]. Japanese Journal of Applied Physics, 2008, 47(11R): 8506.
[4] OSHIMA T, OKUNO T, ARAI N, et al. Vertical solar-blind deep-ultraviolet Schottky photodetectors based on β-Ga₂O₃ Substrates[J]. Applied Physics Express, 2008, 1(1): 011202.
[5] KONG W Y, WU G A, WANG K Y, et al. Graphene-β-Ga₂O₃ heterojunction for highly sensitive deep UV photodetector application[J]. Advanced Materials, 2016, 28(48): 10725-10731.
[6] KANEKO K, SUZUKI K, ITO Y, et al. Growth characteristics of corundum-structured α-(Al_xGa_1-x)₂O₃/Ga₂O₃ heterostructures on sapphire substrates[J]. Journal of Crystal Growth, 2016, 436: 150-154.
[7] ROY R, HILL V G, OSBORN E F. Polymorphism of Ga₂O₃ and the system Ga₂O₃—H₂O[J]. Journal of the American Chemical Society, 1952, 74(3): 719-722.
[8] AKAIWA K, FUJITA S. Electrical conductive corundum-structured α-Ga₂O₃ thin films on sapphire with tin-doping grown by spray-assisted mist chemical vapor deposition[J]. Japanese Journal of Applied Physics, 2012, 51(7R): 070203.
[9] MAHMOUD W E. Solar blind avalanche photodetector based on the cation exchange growth of β-Ga₂O₃/SnO₂ bilayer heterostructure thin film[J]. Solar Energy Materials and Solar Cells, 2016, 152: 65-72.
[10] SUN H D, LI K H, TORRES CASTANEDO C G, et al. HCl flow-induced phase change of α-, β-, and ε-Ga₂O₃ films grown by MOCVD[J]. Crystal Growth & Design, 2018, 18(4): 2370-2376.
[11] KAWAHARAMURA T, NISHINAKA H, FUJITA S. Growth of crystalline zinc oxide thin films by fine-channel-mist chemical vapor deposition[J]. Japanese Journal of Applied Physics, 2008, 47(6R): 4669.
[12] NISHINAKA H, TAHARA D, MORIMOTO S, et al. Epitaxial growth of α-Ga₂O₃ thin films on a-, m-, and r-plane sapphire substrates by mist chemical vapor deposition using α-Fe₂O₃ buffer layers[J]. Materials Letters, 2017, 205: 28-31.
[13] TAKANE H, KONISHI S, HAYASAKA Y, et al. Structural characterization of threading dislocation in α-Ga₂O₃ thin films on c- and m-plane sapphire substrates[J]. Journal of Applied Physics, 2024, 136(2): 025105.
[14] AKAZAWA H. Formation of various phases of gallium oxide films depending on substrate planes and deposition gases[J]. Vacuum, 2016, 123: 8-16.
[15] GUO D Y, ZHAO X L, ZHI Y S, et al. Epitaxial growth and solar-blind photoelectric properties of corundum-structured α-Ga₂O₃ thin films[J]. Materials Letters, 2016, 164: 364-367.
[16] WILLIAMS M S, ALONSO-ORTS M, SCHOWALTER M, et al. Growth, catalysis, and faceting of α-Ga₂O₃ and α-(In_xGa_1-x)₂O₃ on m-plane α-Al₂O₃ by molecular beam epitaxy[J]. Applied Materials, 2024, 12(1): 011120.
[17] LEE S H, LEE K M, KIM Y B, et al. Sub-microsecond response time deep-ultraviolet photodetectors using α-Ga₂O₃ thin films grown via low-temperature atomic layer deposition[J]. Journal of Alloys and Compounds, 2019, 780: 400-407.
[18] YASUOKA T, LIU L, OZAKI T, et al. The effect of HCl on the α-Ga₂O₃ thin films fabricated by third generation mist chemical vapor deposition[J].AIP Advanes, 2021, 11(4): 045123.
[19] KIM K H, HA M T, KWON Y J, et al. Growth of 2-inch α-Ga₂O₃ epilayers via rear-flow-controlled mist chemical vapor deposition[J]. ECS Journal of Solid State Science and Technology, 2019, 8(7): Q3165-Q3170.
[20] PARK S Y, HA M T, KIM K H, et al. Enhanced thickness uniformity of large-scale α-Ga₂O₃ epilayers grown by vertical hot-wall mist chemical vapor deposition[J]. Ceramics International, 2022, 48(4): 5075-5082.
[21] JEON D W, SON H, HWANG J, et al. Electrical properties, structural properties, and deep trap spectra of thin α-Ga₂O₃ films grown by halide vapor phase epitaxy on basal plane sapphire substrates[J]. APL Materials, 2018, 6(12): 121110.
[22] LI X J, NIU P J, NING P F, et al. High surface quality heteroepitaxy α-Ga₂O₃ film on sapphire by mist-CVD technique[J]. Semiconductor Science and Technology, 2023, 38(7): 075012.
[23] TAMBA D, KUBO O, ODA M, et al. Surface termination structure of α-Ga₂O₃ film grown by mist chemical vapor deposition[J]. Applied Physics Letters, 2016, 108(25): 251602.
[24] PEARTON S J, YANG J C, CARY P H, et al. A review of Ga₂O₃ materials, processing, and devices[J]. Applied Physics Reviews, 2018, 5(1): 011301.
[25] NAKABAYASHI Y, YAMADA S, ITOH S, et al. Influence of precursor concentration and growth time on the surface morphology and crystallinity of α-Ga₂O₃ thin films fabricated by mist chemical vapor deposition[J]. Applied Physics Reviews, Journal of the Ceramic Society of Japan, 2018, 126(11): 925-930.
[26] HAO J G, MA T C, CHEN X H, et al. Phase tailoring and wafer-scale uniform hetero-epitaxy of metastable-phased corundum α-Ga₂O₃ on sapphire[J]. Applied Surface Science, 2020, 513: 145871.
[27] PETERSEN C, VOGT S, KNEIß M, et al. PLD of α-Ga₂O₃ on m-plane Al₂O₃: growth regime, growth process, and structural properties[J]. Applied Materials, 2023, 11(6): 061122.

不同晶面蓝宝石衬底上α-Ga₂O₃雾化学气相沉积法生长研究

Growth of α-Ga₂O₃ on Different Plane of Sapphire Substrate by Mist-CVD Method

PDF (PC)

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

编辑推荐

Metrics

本文评价

[1]	姚苏昊, 张茂林, 季学强, 杨莉莉, 李山, 郭宇锋, 唐为华. 基于mist CVD的高纯相α-Ga₂O₃生长与光电响应特性研究[J]. 人工晶体学报, 2025, 54(2): 233-243.
[2]	丁子舰, 颜世琪, 徐希凡, 辛倩. 脉冲激光沉积α相氧化镓薄膜及其日盲光电探测器[J]. 人工晶体学报, 2025, 54(2): 329-336.
[3]	王丹丹, 刘文强, 赵林, 李超, 李世杰. 形貌调控及掺杂改性对TiO₂催化剂光催化性能的影响[J]. 人工晶体学报, 2024, 53(5): 824-832.
[4]	李传皓, 李忠辉, 彭大青, 张东国, 杨乾坤, 罗伟科. 大尺寸GaN微波材料范德瓦耳斯外延机理及应力调控研究[J]. 人工晶体学报, 2024, 53(2): 252-257.
[5]	陈根强, 赵浠翔, 于众成, 李政, 魏强, 林芳, 王宏兴. 异质外延单晶金刚石及其相关电子器件的研究进展[J]. 人工晶体学报, 2023, 52(6): 931-944.
[6]	屈鹏霏, 金鹏, 周广迪, 王镇, 许敦洲, 吴巨, 郑红军, 王占国. 单晶金刚石异质外延用铱复合衬底研究现状[J]. 人工晶体学报, 2023, 52(5): 857-877.
[7]	戚佳斌, 谢欣瑜, 李忠贤. 柔性无机铁电薄膜的制备及其在存储器领域应用研究进展[J]. 人工晶体学报, 2023, 52(3): 380-393.
[8]	李路, 徐俞, 曹冰, 徐科. AlGaN基深紫外LED的外延生长及光电性能研究[J]. 人工晶体学报, 2022, 51(7): 1158-1162.
[9]	常梦琳, 樊星, 张微微, 姚金山, 潘睿, 李晨, 芦红. 利用Al/AlAs中间层调控GaAs在Si(111)上外延生长的研究[J]. 人工晶体学报, 2022, 51(11): 1815-1822.
[10]	开翠红, 王蓉, 杨德仁, 皮孝东. 基于碳化硅衬底的宽禁带半导体外延[J]. 人工晶体学报, 2021, 50(9): 1780-1795.
[11]	刘振华, 樊龙, 符亚军, 王进, 曹林洪, 吴卫东. 同质外延生长ZnO单晶结构及光电性能的研究[J]. 人工晶体学报, 2021, 50(4): 768-775.
[12]	罗建仁, 王相虎, 樊天曜, 金嘉妮, 张如林. SiC衬底上β-Ga₂O₃薄膜生长及p-SiC/n-β-Ga₂O₃异质结光伏特性[J]. 人工晶体学报, 2021, 50(12): 2219-2224.
[13]	付丹扬;龚建超;雷丹;黄嘉丽;王琦琨;吴亮. PVT法AlN单晶生长技术研究进展及其面临挑战[J]. 人工晶体学报, 2020, 49(7): 1141-1156.
[14]	周玄, 程国峰, 何代华. InSeI单晶的制备及其结构与性能研究[J]. 人工晶体学报, 2020, 49(12): 2252-2255.
[15]	沈波;杨学林;许福军. 氮化物宽禁带半导体的MOCVD大失配异质外延[J]. 人工晶体学报, 2020, 49(11): 1953-1969.