基于ITO/Al/ITO结构的红外-可见光兼容隐身薄膜制备与性能研究

doi:10.16553/j.cnki.issn1000-985x.2025.0041

摘要/Abstract

摘要： 红外-可见光兼容隐身材料因突破单波段隐身材料的局限，能够应对多波段侦察技术而备受关注。本文利用直流磁控溅射制备了具有不同厚度Al间隔层的ITO/Al/ITO复合薄膜。通过多膜层间的表面和界面效应及多波段光学耦合等光学效应协同作用，获得了一种可见光高透过与红外高反射的ITO/Al/ITO复合薄膜。XRD表征结果显示，Al层的插入改善了ITO薄膜的结晶性。良好的晶体结构有助于载流子的运动，与载流子迁移率为11.1 cm²·V^-1·s^-1的双层ITO薄膜相比，复合薄膜的载流子迁移率提升到24.2 cm²·V^-1·s^-1。Al层溅射时间9和12 s的复合薄膜的可见光透过率和红外光反射率均大于80%。

关键词: ITO/Al/ITO复合薄膜; 磁控溅射; 红外-可见光兼容隐身; 高透过率; 载流子迁移率

Abstract: Infrared-visible compatible stealth materials have attracted much attention for breaking through the limitation of single-band stealth materials and being able to cope with multi-band reconnaissance technology. In this paper， ITO/Al/ITO composite films with different thicknesses of Al spacer layers were prepared by DC magnetron sputtering. Through the synergistic effect of optical effects such as surface and interface effects and multi-band optical coupling among multiple film layers， a kind of ITO/Al/ITO composite film with high visible light transmission and high infrared reflection is obtained. XRD characterization results show that， the insertion of the Al layer improves the crystallinity of the ITO film， the good crystal structure contributes to the movement of carriers， and the carrier mobility of the composite film is enhanced to 24.2 cm²·V^-1·s^-1 compared with that of the bilayer ITO film， which has a carrier mobility of 11.1 cm²·V^-1·s^-1. The visible light transmittance and infrared light reflectance of the composite films with Al layer sputtering time of 9 and 12 s are both greater than 80%.

Key words: ITO/Al/ITO composite film; magnetron sputtering; infrared-visible compatible stealth; high transmittance; carrier mobility

中图分类号:

谷东, 董玲, 杨季薇, 李海平, 李杰, 朱归胜, 徐华蕊. 基于ITO/Al/ITO结构的红外-可见光兼容隐身薄膜制备与性能研究[J]. 人工晶体学报, 2025, 54(9): 1607-1613.

GU Dong, DONG Ling, YANG Jiwei, LI Haiping, LI Jie, ZHU Guisheng, XU Huarui. Properties of Infrared-Visible Compatible Stealth Films Based on ITO/Al/ITO Structures[J]. Journal of Synthetic Crystals, 2025, 54(9): 1607-1613.

图/表 4

图1 不同Al溅射时间制备的复合薄膜结构特性

Fig.1 Structural properties of composite thin films prepared with different Al sputtering time

图2 不同Al溅射时间制备的复合结构薄膜截面与表面SEM照片

Fig.2 Cross-sectional and surface SEM images of the composite structured films prepared with different Al sputtering time

图3 不同Al溅射时间ITO/Al/ITO复合结构薄膜的表面SEM照片

Fig.3 SEM images of the surface of ITO/Al/ITO composite structure films with different Al sputtering time

图4 不同Al溅射时间制备的复合结构薄膜光电性能

Fig.4 Optoelectronic properties of composite structured films prepared with different Al sputtering time

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