Ga2O3∶Si薄膜制备及其日盲紫外光电探测器性能研究

doi:10.16553/j.cnki.issn1000-985x.2024.0289

人工晶体学报 ›› 2025, Vol. 54 ›› Issue (3): 462-469.DOI: 10.16553/j.cnki.issn1000-985x.2024.0289

Ga₂O₃∶Si薄膜制备及其日盲紫外光电探测器性能研究

张献, 岳志昂, 赵恩钦, 魏帅康, 叶文轩, 黄敏怡, 辛美波, 赵洋, 王辉

河南科技大学物理工程学院,河南省光电储能材料与应用重点实验室,洛阳 471023

收稿日期:2024-11-19 出版日期:2025-03-15 发布日期:2025-04-03
通信作者: 王辉,博士,教授。E-mail:wanghui08@haust.edu.cn; 王辉,河南科技大学教授、博士生导师,河南省青年科技奖获得者,河南省优青,河南省青年骨干教师,中原教育教学领军人才。主要从事半导体材料制备及相关器件研制等方面的研究,采用光辅助MOCVD制备工艺,为宽禁带半导体光电器件制备提供了一种高空穴浓度的p型半导体薄膜材料;研制出NiO-GaN组合激光器件,探索器件的电致激光发射机理,阐明了可控谐振腔对器件电致激光发射特性影响的物理机理。主持国家自然科学基金项目2项、河南省优秀青年科学基金项目1项和河南省面上项目1项。在Appl Phys Lett、Opt Lett等期刊发表SCI论文60余篇,出版学术专著3部。
作者简介:张献(1999—),男,山东省人,硕士研究生。E-mail:885649405@qq.com
基金资助:
国家自然科学基金(61674052,52002120); 河南省自然科学基金(242300420280); 河南省科技研发计划联合基金(242103810049)

Preparation of Ga₂O₃∶Si Thin Films and Study on the Performance of Its Solar-Blind Ultraviolet Photodetectors

ZHANG Xian, YUE Zhiang, ZHAO Enqin, WEI Shuaikang, YE Wenxuan, HUANG Minyi, XIN Meibo, ZHAO Yang, WANG Hui

Henan Key Laboratory of Photoelectric Energy Storage Materials and Applications, School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, China

Received:2024-11-19 Online:2025-03-15 Published:2025-04-03

摘要/Abstract

摘要： 日盲紫外光电探测器(SBPDs)在军事、民用、医疗等领域存在巨大的应用潜力。本文采用射频磁控溅射技术制备Si掺杂氧化镓(Ga₂O₃)薄膜,研究了氩氧流量比对其物理特性的影响。晶体结构、光学性质和表面形貌分析结果表明,当氩氧流量比为30∶20时,薄膜的结晶质量最好。Ga₂O₃∶Si薄膜沿(402)晶面择优生长,表面平整光滑,无微孔洞,400~800 nm波段的平均透过率为90%。基于优化的Ga₂O₃∶Si薄膜制备条件,本文制备了p-GaN/n-Ga₂O₃∶Si自供电SBPDs,其在0 V偏压254 nm光照下的上升时间和衰减时间分别为0.450和0.509 s,光暗电流比(PDCR)、响应度(R)和比探测率(D^*)分别为23、0.24 mA/W和1.67×10⁸ Jones。研究了器件在0~-6 V偏压下的周期性时间响应特性,在0 V偏压下,器件在254 nm辐照瞬间出现尖峰,当施加反向偏压时,尖峰消失。最后分析了p-GaN/Ga₂O₃∶Si异质结在接触前、后及反向偏压下的能带图。

关键词: Ga₂O₃∶Si薄膜, 氩氧流量比, 磁控溅射, 异质结, 日盲紫外光电探测器

Abstract: Solar-blind ultraviolet photodetectors (SBPDs) exhibit significant potential for many fields, including military, civil, and medical sectors. In this paper, Si-doped Ga₂O₃ thinfilms were prepared by radio frequency magnetron sputtering. The effect of the argon-oxygen flow ratio on the physical properties of the films was studied. The analysis results of crystal structure, optical properties, and surface morphology indicate that the crystalline quality of the film is best when the argon-oxygen flow ratio is 30∶20. The Ga₂O₃∶Si thin film exhibits preferential growth along the (402) crystal plane, with a smooth and flat surface without micro-holes, and an average transmittance of 90% in the range of 400 nm to 800 nm. We fabricated p-GaN/n-Ga₂O₃∶Si self-powered SBPDs using optimized preparation parameters. Under 254 nm illumination at 0 V, the device shows rise time and decay time of 0.450 and 0.509 s, respectively. The light-dark current ratio (PDCR), responsivity (R), and specific detectivity (D^*) are 23, 0.24 mA/W, and 1.67×10⁸ Jones, respectively. The time-response characteristics of the device under 0~-6 V bias were studied. Under 0 V, the device has a spike in response at the 254 nm irradiation. When a reverse bias is applied, the spike disappear. Finally, the energy band diagrams of the p-GaN/Ga₂O₃∶Si heterojunction before contact, after contact, and under reverse bias are analyzed.

Key words: Ga₂O₃∶Si thin film, argon-oxyge flow ratio, magnetron sputtering, heterojunction, solar-blind ultraviolet photodetector

中图分类号:

TN304
O475

张献, 岳志昂, 赵恩钦, 魏帅康, 叶文轩, 黄敏怡, 辛美波, 赵洋, 王辉. Ga₂O₃∶Si薄膜制备及其日盲紫外光电探测器性能研究[J]. 人工晶体学报, 2025, 54(3): 462-469.

ZHANG Xian, YUE Zhiang, ZHAO Enqin, WEI Shuaikang, YE Wenxuan, HUANG Minyi, XIN Meibo, ZHAO Yang, WANG Hui. Preparation of Ga₂O₃∶Si Thin Films and Study on the Performance of Its Solar-Blind Ultraviolet Photodetectors[J]. Journal of Synthetic Crystals, 2025, 54(3): 462-469.

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Ga₂O₃∶Si薄膜制备及其日盲紫外光电探测器性能研究

Preparation of Ga₂O₃∶Si Thin Films and Study on the Performance of Its Solar-Blind Ultraviolet Photodetectors

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