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Journal of Synthetic Crystals ›› 2025, Vol. 54 ›› Issue (5): 757-771.DOI: 10.16553/j.cnki.issn1000-985x.2024.0282

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Research Progress on Near-Infrared Group Ⅳ-Ⅵ Semiconductor Quantum Dot Optical Fibers

LI Shuai(), ZHANG Lei()   

  1. College of Physics and Electronic Engineering,Mudanjiang Normal University,Mudanjiang 157011,China
  • Received:2024-11-09 Online:2025-05-15 Published:2025-05-28

Abstract: Semiconductor quantum dot (QD) materials have unique optical and electrical properties, and have shown great potential for applications in LED, solar cells, fluorescent probes, catalysis, and other fields. Especially for Ⅳ-Ⅵ group semiconductor QD materials, their fluorescence spectra are in the near-infrared band and cover the optical fiber communication window. Therefore, QD doped optical fibers has a wide range of applications in the field of optical fiber communication. Currently, the main preparation methods for Ⅳ-Ⅵ group semiconductor QD doped optical fibers include modified chemical vapor deposition, sol-gel film coating, hollow fiber filling and solidification, high-temperature melting direct drawing, in-tube melting, and glass capillary injection. This paper provides a detailed review of these six experimental preparation methods, their advantages and disadvantages, as well as the optical gain quality of the prepared quantum dot optical fibers. Based on six different theoretical models and fiber types, theoretical calculations of the emission properties and optical gain properties of QD doped optical fibers are carried out. Furthermore, the challenges and solutions in experimental and theoretical research, as well as prospects for future research directions are given.

Key words: group Ⅳ-Ⅵ; semiconductor quantum dot; quantum dot optical fiber; near infrared luminescence; optical gain; electrical property

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