Review on Mg Doping of Ga2O3

doi:10.16553/j.cnki.issn1000-985x.2024.0295

Abstract

Abstract: Gallium oxide (Ga₂O₃) possesses an ultra-wide bandgap and high breakdown electric field, making it promising for applications in power electronic devices and optoelectronic devices. Although Ga₂O₃ lacks p-type conductivity, we can still utilize p-type doping to control and design electrical properties by energy band engineering. The p-type dopants for gallium oxide that have been experimentally verified include Mg, Fe, N, Zn, Cu, Ni, Co, etc. Among the p-type dopants of Ga₂O₃, Mg is extensively studied due to its lowest formation energy, closest energy level to the valence band top, and multiple doping methods. This paper focuses on Mg doping β-Ga₂O₃. Firstly, the theoretical computational understanding and experimental test results of the acceptor levels of Mg-doped Ga₂O₃ are reviewed. Secondly, various doping methods, doping concentrations, and key issues such as Mg diffusion during thermal treatment for semi-insulating single crystals and epitaxial layers of Mg-doped β-Ga₂O₃ are summarized. Finally, it is pointed out that further investigations are needed on the mechanisms of Mg incorporation, activation and diffusion.

Key words: Ga₂O₃, Mg doping, semi-insulating substrate, current blocking layer, electrical property

CLC Number:

O483
O78

SUN Rujun, ZHANG Jinghui, LI Yifan, HAO Yue, ZHANG Jincheng. Review on Mg Doping of Ga₂O₃[J]. Journal of Synthetic Crystals, 2025, 54(3): 361-370.

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Review on Mg Doping of Ga₂O₃

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