ε-Ga2O3 Growth on c-Plane Sapphire Substrate with Metal-Organic Chemical Vapor Deposition

doi:10.16553/j.cnki.issn1000-985x.2024.0300

Abstract

Abstract: In this paper, the growths of ε-Ga₂O₃ thin films on c-plane sapphire substrate by metal-organic chemical vapor deposition (MOCVD) via single-step and two-step growth methods were studied respectively. High-resolution X-ray single crystal diffraction was used to analyze the phase composition of Ga₂O₃ along the c-axis direction of the sapphire. In the single-step method, the thin film grows directly on the sapphire substrate. The β-Ga₂O₃ (402) peak can be observed at growth temperatures ranging from 360 ℃ to 425 ℃, while the ε-Ga₂O₃ (004) peak can also be detected at 370~410 ℃. Samples grown at 380 and 390 ℃ exhibit stronger ε-Ga₂O₃ (004) peaks with lower full width at half maximum (FWHM) and a surface roughness. The two-step growth method involves using an ε-Ga₂O₃ thin film grown at 380 ℃ as a buffer layer, followed by continuing the growth of ε-Ga₂O₃ thin films at 400~430 ℃. It is observed that the intensity of the ε-Ga₂O₃ (004) peak is higher than that of the single-step growth method, with even lower FWHM values. The rocking curve FWHM of the (004) peak of the film reaches 0.49° at continuing growth temperature of 430 ℃. Further adjustment of the pressure in the single-step growth method confirms that the buffer layer effectively promotes the growth of ε-Ga₂O₃ along the c-axis.

Key words: ε-Ga₂O₃, metal-organic chemical vapor deposition, sapphire substrate, crystal growth, wide-band-gap semiconductor, X-ray diffraction, atomic force microscope

CLC Number:

O782⁺.9

WANG Ziming, ZHANG Yachao, FENG Qian, LIU Shiteng, LIU Yuhong, WANG Yao, WANG Long, ZHANG Jincheng, HAO Yue. ε-Ga₂O₃ Growth on c-Plane Sapphire Substrate with Metal-Organic Chemical Vapor Deposition[J]. Journal of Synthetic Crystals, 2025, 54(3): 420-425.

References

[1] GUPTA C, PASAYAT S S. Vertical GaN and vertical Ga₂O₃ power transistors: status and challenges[J]. Physica Status Solidi (a), 2022, 219(7): 2100659.
[2] WASEEM A, REN Z J, HUANG H C, et al. A review of recent progress in β-Ga₂O₃ epitaxial growth: effect of substrate orientation and precursors in metal-organic chemical vapor deposition[J]. Physica Status Solidi (a), 2023, 220(8): 2200616.
[3] MILISAVLJEVIC I, WU Y Q. Fabrication of tunable bandgap epitaxial β-(Al_xGa_1-x)₂O₃ films using a spin-coating method[J]. International Journal of Applied Ceramic Technology, 2023, 20(2): 725-734.
[4] HU H Z, WU C, ZHAO N, et al. Epitaxial growth and solar-blind photoelectric characteristic of Ga₂O₃ film on various oriented sapphire substrates by plasma-enhanced chemical vapor deposition[J]. Physica Status Solidi (a), 2021, 218(11): 2100076.
[5] LEE H, KIM S, AHN H, et al. Formation of high-quality heteroepitaxial β-Ga₂O₃ films by crystal phase transition[J]. Crystal Research and Technology, 2021, 56(2): 2000149.
[6] ROEHRENS D, BRENDT J, SAMUELIS D, et al. On the ammonolysis of Ga₂O₃: an XRD, neutron diffraction and XAS investigation of the oxygen-rich part of the system Ga₂O₃-GaN[J]. Journal of Solid State Chemistry, 2010, 183(3): 532-541.
[7] CHEN W Q, LUO H X, CHEN Z M, et al. First demonstration of hetero-epitaxial ε-Ga₂O₃ MOSFETs by MOCVD and a F-plasma surface doping[J]. Applied Surface Science, 2022, 603: 154440.
[8] CHEN W Q, CHEN Z M, LI Z Q, et al. Heteroepitaxy of ε-Ga₂O₃ thin films grown on AlN/Si(111) templates by metal-organic chemical vapor deposition[J]. Applied Surface Science, 2022, 581: 152335.
[9] WANG Y, CAO J H, SONG H Z, et al. Polarization engineering of two-dimensional electron gas at ε-(Al_xGa_1-x)₂O₃/ε-Ga₂O₃ heterostructure[J]. Applied Physics Letters, 2023, 123(14): 142103.
[10] WANG J, GUO H, ZHU C Z, et al. ε-Ga₂O₃: a promising candidate for high-electron-mobility transistors[J]. IEEE Electron Device Letters, 2020, 41(7): 1052-1055.
[11] WANG Y, CAO J H, LIAO Y M, et al. Density functional theory study of polarization-induced electron confinement by dilute boron alloying in ε-Ga₂O₃ nanometer-thick film for high electron mobility transistor[J]. ACS Applied Nano Materials, 2024, 7(8): 9337-9344.
[12] MULAZZI M, REICHMANN F, BECKER A, et al. The electronic structure of ε-Ga₂O₃[J]. APL Materials, 2019, 7(2): 022522.
[13] CHEN Z M, LI Z Q, ZHUO Y, et al. Layer-by-layer growth of ε-Ga₂O₃ thin film by metal-organic chemical vapor deposition[J]. Applied Physics Express, 2018, 11(10): 101101.
[14] CAO X, XING Y H, HAN J, et al. Crystalline properties of ε-Ga₂O₃ film grown on c-sapphire by MOCVD and solar-blind ultraviolet photodetector[J]. Materials Science in Semiconductor Processing, 2021, 123: 105532.
[15] LEE J, GAUTAM L, TEHERANI F H, et al. Investigation of enhanced heteroepitaxy and electrical properties in κ-Ga₂O₃ due to interfacing with β-Ga₂O₃ template layers[J]. Physica Status Solidi (a), 2023, 220(8): 2200559.
[16] HSU Y H, WU W Y, LIN K L, et al. ε-Ga₂O₃ grown on c-plane sapphire by MOCVD with a multistep growth process[J]. Crystal Growth & Design, 2022, 22(3): 1837-1845.
[17] MONTEDORO V, TORRES A, DADGOSTAR S, et al. Cathodoluminescence of undoped and Si-doped ε-Ga₂O₃ films[J]. Materials Science and Engineering: B, 2021, 264: 114918.
[18] CHEN S J, CHEN Z M, CHEN W Q, et al. High-quality heteroepitaxy of ε-Ga₂O₃ films on 4H-SiC substrates grown via MOCVD[J]. CrystEngComm, 2024, 26(25): 3363-3369.
[19] YAO Y Z, HIRANO K, SASAKI K, et al. Lattice misorientation at domain boundaries in β-Ga₂O₃ single-crystal substrates observed via synchrotron radiation X-ray diffraction imaging and X-ray reticulography[J]. Journal of the American Ceramic Society, 2023, 106(9): 5487-5500.
[20] FEI Z Y, CHEN Z M, CHEN W Q, et al. High-performance ε-Ga₂O₃ solar-blind photodetectors grown by MOCVD with post-thermal annealing[J]. Coatings, 2023, 13(12): 1987.
[21] LI S, YUE J Y, JI X Q, et al. Oxygen vacancies modulating the photodetector performances inε-Ga₂O₃ thin films[J]. Journal of Materials Chemistry C, 2021, 9(16): 5437-5444.
[22] BOSIO A, PARISINI A, LAMPERTI A, et al. n-type doping of ε-Ga₂O₃ epilayers by high-temperature tin diffusion[J]. Acta Materialia, 2021, 210: 116848.

ε-Ga₂O₃ Growth on c-Plane Sapphire Substrate with Metal-Organic Chemical Vapor Deposition

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