Abstract: Ultra-wide bandgap semiconductor β-Ga₂O₃ single crystal, which has excellent high breakdown field and low-cost potential, has attracted extensive attention from researchers. In this paper, 3~4 inch (1 inch=2.54 cm) Fe-doped β-Ga₂O₃ single crystals were grown by edge-defined film-fed growth method, the maximum length of which is 270 mm. A single crystals ingot could be cut to several bulk crystals with the large size, which effectively reduced the crystal growth cost. The electrical, optical and high-resolution X-ray diffraction full width at half maximum of the grown crystals were tested and analyzed. The data indicates good consistency in the electrical, optical, and XRD full width at half maximum of the wafers, demonstrating excellent crystal quality. Furthermore, the performance of a series of Fe-doped β-Ga₂O₃ single crystals were studied to analyze the influence of the Fe element on the quality, band gap and lattice vibration of β-Ga₂O₃ single crystals. It is found that, all the Fe-doped β-Ga₂O₃ single crystals have good crystalline quality. Fe doping can widen the bandgap of β-Ga₂O₃ single crystals, and meanwhile, induce a slight tensile stress in β-Ga₂O₃ single crystals. This paper will provide data support for substrate epitaxy and device verification.

Key words: β-Ga₂O₃ single crystal, resistivity, transmittance, Raman spectrum, XRD full width at half maximum