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JOURNAL OF SYNTHETIC CRYSTALS ›› 2001, Vol. 30 ›› Issue (1): 63-66.

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Study on Crystal Growth and Integrality of AgGaS2

ZHU Xing-hua;ZHAO Bei-Jun;ZHU Shi-fu;YU Feng-liang;SHAO Shuang-yun;SONG Fang;GAO De-you;CAI Li   

  • Online:2001-01-15 Published:2021-01-20

Abstract: High-pure AgGaS2 polycrystal of single-phase and high-density has been synthesized by two-zone vapor-transporting and temperature-oscillating method.The lattice constant and the location of S atom were calculated to be a=5.753nm,c=10.3008nm and x=0.279,with little discrepancy comparing to PDF value,which showed the high-quality of our synthesized polycrystal.Single crystal with 15mm in diameter and 30mm in length has also been grown by modified Bridgman method.By observation on appearance,X-ray diffractin on cleavage faces,it showed that the crystal is crystallized with good integrality.

Key words: High-pure AgGaS2 polycrystal of single-phase and high-density has been synthesized by two-zone vapor-transporting and temperature-oscillating method.The lattice constant and the location of S atom were calculated to be a=5.753nm,c=10.3008nm and x=0.279,with little discrepancy comparing to PDF value,which showed the high-quality of our synthesized polycrystal.Single crystal with 15mm in diameter and 30mm in length has also been grown by modified Bridgman method.By observation on appearance,X-ray diffractin on cleavage faces,it showed that the crystal is crystallized with good integrality.

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