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JOURNAL OF SYNTHETIC CRYSTALS ›› 2004, Vol. 33 ›› Issue (4): 674-678.

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Analysis of Residual Stress Distribution in DC Arc Plasma Jet CVD High Quality Diamond Films by Raman Spectroscopy

  

  • Online:2004-08-15 Published:2021-01-20

Abstract: Diamond films were deposited on molybdenum substrates (φ60mm) by a 100kW DC arc plasma jet CVD apparatus under different process parameters. The diamond films were characterized by scanning electron microscopy (SEM), Raman spectroscopy (laser excitation wavelength:488 nm) and X-ray diffraction. The results show that in the process of DC arc plasma jet CVD diamond film deposition, the internal stress increases from the center to the edge, and the stress mode is compressive. This demonstrates a significant inhomogeneity of stress in diamond films. Both methane concentration and substrate temperature influence the internal stress in diamond films. The trend is that internal stress increases with the increase of methane concentration and substrate temperature.

Key words: Diamond films were deposited on molybdenum substrates (φ60mm) by a 100kW DC arc plasma jet CVD apparatus under different process parameters. The diamond films were characterized by scanning electron microscopy (SEM), Raman spectroscopy (laser excitation wavelength:488 nm) and X-ray diffraction. The results show that in the process of DC arc plasma jet CVD diamond film deposition, the internal stress increases from the center to the edge, and the stress mode is compressive. This demonstrates a significant inhomogeneity of stress in diamond films. Both methane concentration and substrate temperature influence the internal stress in diamond films. The trend is that internal stress increases with the increase of methane concentration and substrate temperature.

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