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JOURNAL OF SYNTHETIC CRYSTALS ›› 2007, Vol. 36 ›› Issue (5): 1056-1061.

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Growth Characteristic of Scheelite SrWO4 Film by Using Electrochemical Technique at Room Temperature

AN Hong-na;YANG Zu-nian;XIAO Ding-quan;YU Ping;LIU Zhi-qiang;CHEN Lian-ping;HUANG Xin;WANG Hui   

  • Online:2007-10-15 Published:2021-01-20

Abstract: Strontium tungstate(SrWO4)films were prepared directly on metal tungsten substrates at room temperature in different time from the early stage to the terminal stage of film growth by using constant current electrochemical technique. The growth process of SrWO4 films was investigated through the SEM and EDX measurement. It was found that the crystalline nucleus and granules of the SrWO4 films choose the defect positions on the substrates prior to form and grow; at the early stage of the film growth, a quantity of WO4 anion coordination polyhedra deposit on the substrate and form the scheelite framework,then the Sr2+ ions fill in the framework resulting in the crystalline nucleus and granules; along with the increase of the deposition time, the number of the crystalline granules increases continually, the crystalline nucleus and granules grow up and bifurcate along the direction of its c axis growth, the bigger the crystalline granules are the more the offshoots are; at last, the SrWO4 crystalline granules become cauliflower form, and bestrew the whole tungsten substrate to form the compact SrWO4 crystalline films.The results of present research have great significance for the understanding of the growth mechanism of crystalline films and the controlling of the growth processes of the crystalline films by using electrochemical technique.

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