Abstract: High quality MgO thin films have been successfully grown on glass, Al2O3, Si(111) and Si (100) substrates at 480℃ by using atmospheric-pressure metalorganic chemical vapor deposition (APMOCVD) technique. Magnesium 2,4-pentanedionate was used as metalorganic source. X-ray diffraction experiments provided evidence that the MgO films grown on glass, Al2O3, Si (111) and Si (100) with (100) orientation were regardless of the substrate materials and orientations. The as-grown MgO film on Si(100) has a very smooth surface morphology and a nearly stoichiometric composition by scanning electron microscopy (SEM) and Rutherford backscattering (RBS). According to the simulation, diffusion of Si near the interface was found when the growth time reached 70min.

Key words: High quality MgO thin films have been successfully grown on glass, Al2O3, Si(111) and Si (100) substrates at 480℃ by using atmospheric-pressure metalorganic chemical vapor deposition (APMOCVD) technique. Magnesium 2,4-pentanedionate was used as metalorganic source. X-ray diffraction experiments provided evidence that the MgO films grown on glass, Al2O3, Si (111) and Si (100) with (100) orientation were regardless of the substrate materials and orientations. The as-grown MgO film on Si(100) has a very smooth surface morphology and a nearly stoichiometric composition by scanning electron microscopy (SEM) and Rutherford backscattering (RBS). According to the simulation, diffusion of Si near the interface was found when the growth time reached 70min.