Abstract: ZnO:Al(AZO)thin films on glass were prepared by magnetron sputtering and subsequently annealed at 600℃ to 800℃ by pulsed rapid thermal processing (PRTP). The XRD, Spectrophotometer and Four-point probe instruments were employed to measure the crystallinity, transmittance and conductivity of the AZO films. The results show that,(1)the resistivity of AZO films one to six order of magnitude from 10-4Ω ·cm while the transmittance keeps the same level of 82-92; as before annealing.Those cannot be used as electrode in solar cells after annealing; (2) It is clear that the good structural properties benefits the conductivity of the sample. The phenomenon analyzed in theory.

Key words: ZnO:Al(AZO)thin films on glass were prepared by magnetron sputtering and subsequently annealed at 600℃ to 800℃ by pulsed rapid thermal processing (PRTP). The XRD, Spectrophotometer and Four-point probe instruments were employed to measure the crystallinity, transmittance and conductivity of the AZO films. The results show that,(1)the resistivity of AZO films one to six order of magnitude from 10-4Ω ·cm while the transmittance keeps the same level of 82-92; as before annealing.Those cannot be used as electrode in solar cells after annealing; (2) It is clear that the good structural properties benefits the conductivity of the sample. The phenomenon analyzed in theory.