Abstract: ZnO∶Al thin films based on Al doped ZnO ceramic target were prepared by non-reactive DC magnetron sputtering at room temperature. The effects of heat treatment process on microstructure, electrical and optical properties of ZnO∶Al films were investigated. The experimental results show that annealing process in vacuum could improve the conductive properties by eliminating lattice deformation and stress, increasing the carrier concentration and the mobility, decreasing electrical resistivities to a value of 8.6×10~(-4) Ω·cm when the sputtering power is 80 W and the annealing temperature is 320 ℃. The annealing process had little effect on the optical transmittance of ZnO∶Al films, which is above 86;.

Key words: ZnO∶Al thin films based on Al doped ZnO ceramic target were prepared by non-reactive DC magnetron sputtering at room temperature. The effects of heat treatment process on microstructure, electrical and optical properties of ZnO∶Al films were investigated. The experimental results show that annealing process in vacuum could improve the conductive properties by eliminating lattice deformation and stress, increasing the carrier concentration and the mobility, decreasing electrical resistivities to a value of 8.6×10~(-4) Ω·cm when the sputtering power is 80 W and the annealing temperature is 320 ℃. The annealing process had little effect on the optical transmittance of ZnO∶Al films, which is above 86;.